Suppression of Plasma Damage on SnO2 by Means of a Different Surface Chemistry Using Dichlorosilane

2000 ◽  
Vol 609 ◽  
Author(s):  
T. Nakashima ◽  
M. Kondo ◽  
Y. Toyoshima ◽  
A. Matsuda
Keyword(s):  
Solar Cells ◽  
Surface Chemistry ◽  
Substrate Temperature ◽  
Window Layer ◽  
Plasma Damage ◽  
Reaction Pressure ◽  
Suitable Material ◽  
Optical Gap ◽  
Boron Doped ◽  
Lower Substrate Temperature

ABSTRACTWe report on that plasma damage on SnO2 can be suppressed by using surface termination by chlorine. It was found that the darkening of SnO2 is decreased and a wider gap p-a-Si material is obtained by using SiH2Cl2 especially at the higher reaction pressure and at the lower substrate temperature. The suppression of darkening of SnO2 and wide optical gap is correlated to chlorine contents in the film. It is demonstrated that SiH2Cl2 is also beneficial for boron-doped material, indicating a suitable material for a window layer of solar cells.

DEVELOPMENT OF HIGHLY CONDUCTIVE BORON-DOPED MICROCRYSTALLINE SILICON FILMS FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (03) ◽  
pp. 303-314 ◽  
Author(s):  
QING-SONG LEI ◽  
ZHI-MENG WU ◽  
JIAN-PING XI ◽  
XIN-HUA GENG ◽  
YING ZHAO ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Boron Doped ◽  
Deposition Processes ◽  
P Type

We have examined the deposition of highly conductive boron-doped microcrystalline silicon (μc- Si:H ) films for application in solar cells. Depositions were conducted in a very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) chamber. In the deposition processes, various substrate temperatures (TS) were applied. Highly conductive p-type microcrystalline silicon films were obtained at substrate temperature lower than 210°C. The factors that affect the conductivity of the films were investigated. Results suggest that the dark conductivity, which was determined by the Hall mobility and carrier concentration, is influenced by the structure. The properties of the films are strongly dependent on the substrate temperature. With TS increasing, the dark conductivity (σd) increases initially; reach the maximum values at certain TS and then decrease. Also, we applied the boron-doped μc- Si:H as p-layers to the solar cells. An efficiency of about 8.5% for a solar cell with μc- Si:H p-layer was obtained.

Improvement of Single-Junction a-Si:H Thin-Film Solar Cells Toward 10% Efficiency

2011 ◽  
Vol 1321 ◽  
Author(s):  
P. H. Cheng ◽  
S. W. Liang ◽  
Y. P. Lin ◽  
H. J. Hsu ◽  
C. H. Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Electron Hole ◽  
Single Junction ◽  
Boron Doped ◽  
Hydrogenated Amorphous

ABSTRACTThe hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.

Properties of High Quality p-Type Micro-Crystalline-Si Prepared by Cat-CVD

2003 ◽  
Vol 762 ◽  
Author(s):  
Hideki Matsumura ◽  
Kouichi Katouno ◽  
Masaya Itoh ◽  
Atsushi Masuda
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Window Layer ◽  
Hot Wire ◽  
Structural And Optical Properties ◽  
High Quality ◽  
Suitable Material ◽  
Si Solar Cells ◽  
P Type

AbstractProperties of p-type μc-Si prepared by Cat-CVD (Catalytic Chemical Vapor Deposition), often called Hot-Wire CVD, are studied for possible application to window layer of a-Si solar cells. Electrical, structural and optical properties are investigated. It is concluded that Cat-CVD p-type μc-Si is a suitable material as a window layer for Cat-CVD a-Si solar cells.

Boron doped amorphous diamond window layer deposited by filtered arc for amorphous silicon alloy p–i–n solar cells

2009 ◽  
Vol 93 (9) ◽  
pp. 1652-1656 ◽  
Author(s):  
Jiaqi Zhu ◽  
Huijie Zhao ◽  
Chunzhu Jiang ◽  
Jiecai Han ◽  
Manlin Tan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Window Layer ◽  
Silicon Alloy ◽  
Boron Doped

An Exploratory Survey of p-Layers for a-Si:H Solar Cells

1994 ◽  
Vol 336 ◽  
Author(s):  
Y.-M. Li ◽  
F. Jackson ◽  
L. Yang ◽  
B.F. Fieselmann ◽  
L. Russell
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Conversion Efficiency ◽  
Good Alternative ◽  
Window Layer ◽  
Coated Glass ◽  
Glass Substrates ◽  
Boron Doped ◽  
Exploratory Survey ◽  
Wide Gap

ABSTRACTThe window layer (p-layer) critically affects the conversion efficiency of a-Si:H based p-i-n type solar cells. This paper surveys possible alternative window materials in comparison with the standard boron doped a-SiC:H p-layer. A novel wide-gap amorphous silicon alloy, a-Si:F:H, will be shown to be a good alternative p-layer. As an example of nontraditional p-layer, boron based alloys (e.g., a-B:H) exhibit notable photovoltaic action in a-Si:H solar cells. We comment on attempts to deposit μc-Si alloy window layers on textured TCO-coated glass substrates.

The improvement of solar cells performance by optimized boron doped nc-Si:H/a-SiC:H superlattice window layer

2017 ◽  
Vol 320 ◽  
pp. 483-488
Author(s):  
Jun Ma ◽  
Yujie Yuan ◽  
Zhengchun Yang ◽  
Kailiang Zhang
Keyword(s):  
Solar Cells ◽  
Window Layer ◽  
Boron Doped
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