Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology

2006 ◽  
Vol 917 ◽  
Author(s):  
Raghunath Singanamalla ◽  
Judit Lisoni ◽  
Isabelle Ferain ◽  
Olivier Richard ◽  
Laure Carbonell ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Cmos Technology ◽  
Flat Band ◽  
Thickness Variation ◽  
Organic Chemical ◽  
Gate Electrode ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

AbstractThe electrical and material characterization of Ti(C)N deposited by metal organic chemical vapor deposition (MOCVD) technique, as metal gate electrode for advanced CMOS technology is investigated. The effects of the plasma treatment, post anneal treatment and the thickness variation of the Ti(C)N film on the flat band voltage (VFB) and effective work function (WF) of the Poly-Si/Ti(C)N/SiO2 Poly-Si/Ti(C)N/SiO2 gate stack s are reported. We found that both the in-situ plasma treatment and post anneal treatment help in reducing the carbon content (organic) in the film making it more metallic compared to the as-deposited films. However, the post anneal treatment was found to be a better option for getting rid of hydrocarbons as compared to plasma treatment from the gate dielectric integrity point of view. The thickness variation of post annealed Ti(C)N film ranged from 2.5 nm to 10 nm lead to WF shift of upto ~350 mV for both Poly-Si/Ti(C)N/SiO2 and Poly-Si/Ti(C)N/HfO2 gate stacks.

Flat-band Voltage Shift of MOS Capacitors with Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing

2003 ◽  
Vol 786 ◽  
Author(s):  
M. Kadoshima ◽  
K. Yamamoto ◽  
H. Fujiwara ◽  
K. Akiyama ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Tantalum Nitride ◽  
Flat Band ◽  
Processing Temperature ◽  
Flat Band Voltage ◽  
Gate Electrode ◽  
Mos Capacitors ◽  
Effective Work ◽  
Effective Work Function ◽  
Vapor Deposition Technique

ABSTRACTWe have investigated the flat-band voltage (VFB) shifts of tantalum nitride gate MOS capacitors prepared by two methods. One is CVD-tantalum nitride (CVD-TaN) deposited by the chemical vapor deposition technique using Ta[NC(CH3)2C2H5][N(CH3)2]3 as a precursor, and the other one is sputtered tantalum nitride (sp-TaN) electrodes deposited by reactive DC magnetron sputtering. In the case of the CVD-TaN electrodes, the effective work function estimated from the relationship between VFB and the equivalent oxide thickness (EOT) of the MOS capacitors was about 4.4eV after post metallization annealing (PMA) at 400°C, and shifted to the mid-gap after PMA at 950°C. Moreover, the VFB values of MOS capacitors with sp-TaN electrodes also showed the same behavior after PMA. This shift is mainly dependent on the PMA temperature, regardless of the deposition method used. Similar VFB shifts induced by PMA were also observed in sp-TaN/ Al2O3/ SiO2/ p-Si and sp-TaN/ TaOx/ SiO2/ p-Si capacitors. However, in the case of the sp-TaN/ TaOx/ SiO2/ p-Si capacitors, the VFB shift was also observed when the PDA temperature after the TaOx deposition was 800°C and the PMA temperature after the TaN deposition was only 400°C. These results strongly suggest that this VFB shift caused by the PMA originates from a thin interfacial oxide layer between the TaN gate electrode and the dielectrics. Therefore, the maximum processing temperature after gate electrode deposition is important in order to control the threshold voltage of tantalum nitride gate MOSFETs.

Thermally-Stable High Effective Work Function TaCN and Ta2N Films for pMOS Metal Gate Applications

2008 ◽  
Vol 1073 ◽  
Author(s):  
Christoph Adelmann ◽  
P. Lehnen ◽  
L.-Å. Ragnarsson ◽  
T. Conard ◽  
A. Franquet ◽  
...  
Keyword(s):  
Work Function ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Films ◽  
Organic Chemical ◽  
Thermal Budget ◽  
Effective Work ◽  
Effective Work Function ◽  
Metal Organic ◽  
Spike Annealing

ABSTRACTTaCN-based metal films were grown by metal-organic chemical-vapor deposition (MOCVD) and atomic vapor-deposition (AVD). Thermal decomposition at 500ºC leads to com-positions of approximately Ta0.50C0.4N0.1 (“TaCN”), whereas a reactive process using NH3 leads to the formation of Ta0.65C0.1N0.25 (“Ta2N”) films. All films are nearly amorphous as grown and recrystallize only weakly after spike annealing at 1050°C. The thermal stability of TaCN/HfSiO4 and Ta2N/HfSiO4 stacks during spike annealing at 1050°C was studied and Si and Hf outdiffusion into TaCN or Ta2N was observed. The effective work functions of TaCN and Ta2N on HfSiO4 were found to be as high as 4.9 eV after high thermal budget. It is demonstrated that the effective work function can be further increased to 5.1 eV after high thermal budget by the insertion of a thin Al2O3 capping layer between HfSiO4 and the metal films.

Thermally stable high effective work function TaCN thin films for metal gate electrode applications

2009 ◽  
Vol 105 (5) ◽  
pp. 053516 ◽  
Author(s):  
C. Adelmann ◽  
J. Meersschaut ◽  
L.-Å. Ragnarsson ◽  
T. Conard ◽  
A. Franquet ◽  
...  
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Thermally Stable ◽  
Gate Electrode ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

scholarly journals Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1084
Author(s):  
Sivaramakrishnan Ramesh ◽  
Arjun Ajaykumar ◽  
Lars-Åke Ragnarsson ◽  
Laurent Breuil ◽  
Gabriel El Hajjam ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Electrode ◽  
Flat Band ◽  
Nand Flash ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
The Impact ◽  
Gate Work Function

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and linked any shift in the work function, leading to an effective work function, to the dipole formation at the metal/high-k and/or high-k/SiO2 interface. We corroborated the findings with the erase performance of metal/high-k/ONO/Si (MHONOS) capacitors that are identical to the gate stack in three-dimensional (3D) NAND flash. We demonstrate that though the work function extraction is convoluted by the dipole formation, the erase performance is not significantly affected by it.

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion

Investigating doping effects on high-κ metal gate stack for effective work function engineering

2013 ◽  
Vol 88 ◽  
pp. 21-26 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Der Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Doping Effects
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