EFFECT OF RAPID THERMAL ANNEALING ON THE Mg-DOPED GaN/Si FILM
2006 ◽
Vol 20
(25n27)
◽
pp. 4034-4039
Keyword(s):
P Type
◽
Mg -doped GaN films have been successfully prepared on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). Upon rapid thermal annealing (RTA) treatment, the films showed p-type conductivity with a carrier density of 7.84 cm-3, a mobility of 5.54 cm2V-1s-1, and a resistivity of about 0.144 Ωcm, which were much better than that of the films without rapid thermal annealing (RTA) treatment. It was found that the surface morphology and crystal quality of the obtained p-type GaN films were greatly improved by RTA treatment, while the residual stress and dislocations in these films were decreased.
2002 ◽
Vol 41
(Part 1, No. 11B)
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pp. 6701-6704
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2014 ◽
Vol 896
◽
pp. 192-196
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2011 ◽
Vol 509
(5)
◽
pp. 1980-1983
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1998 ◽
Vol 37
(Part 1, No. 8)
◽
pp. 4595-4602
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