Achievements and Characterizations of GaN With Ga-Polarity in Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 622 ◽  
Author(s):  
X.Q. Shen ◽  
T. Ide ◽  
S.H. Cho ◽  
M. Shimizu ◽  
S. Hara ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hall Effect Measurement ◽  
Radio Frequency Plasma ◽  
Ion Scattering ◽  
Rocking Curve ◽  
Initial Stage ◽  
Frequency Plasma ◽  
Measurement Results ◽  
Scattering Spectra

ABSTRACTLattice polarities and film qualities of GaN grown by rf-MBE were investigated concentrating on the use of different buffer layer processes at the initial stage. Direct clarifying by coaxial impact collision ion scattering spectra technique, together with RHEED and chemical wet etching, were applied to identify the lattice polarity of GaN films. XRD rocking curve and photoluminescence results showed that the qualities of GaN films with Ga-polarity were dramatic improved compared to those with N-polarity. Hall effect measurement results indicated that the mobility of the Ga-face film was increased to one order higher (568 cm2/Vs in maximum at room temperature) than that of N-face one.

Nitrogen doping of molecular beam epitaxially grown CdTe with a radio-frequency plasma source

1994 ◽  
Vol 138 (1-4) ◽  
pp. 443-447 ◽  
Author(s):  
K.A. Dhese ◽  
D.E. Ashenford ◽  
J.E. Nicholls ◽  
P. Devine ◽  
B. Lunn ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Plasma Source ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

scholarly journals Magnetic Characteristics of Mn-Implanted GaN Nanorods Followed by Thermal Annealing

2012 ◽  
Vol 2012 ◽  
pp. 1-6
Author(s):  
Im Taek Yoon ◽  
Yoon Shon ◽  
Younghae Kwon ◽  
Young S. Park ◽  
Chang Soo Park ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Magnetic Phase ◽  
Structural Disorder ◽  
Magnetic Characteristics ◽  
Radio Frequency Plasma ◽  
Si Substrate ◽  
Ferromagnetic Property ◽  
Si Substrates ◽  
Annealing Step ◽  
Frequency Plasma

We have investigated the magnetic and optical properties of dislocation-free vertical GaN nanorods with diameters of 150 nm grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy followed by Mn ion implantation and annealing. The GaN nanorods are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV. For GaMnN nanorods, it can be concluded that the ferromagnetic property of GaMnN nanorod with a Curie temperature over 300 K is associated with the formation of Mn4Si7magnetic phase which results from the effects of magnetic and structural disorder introduced by a random incorporation and inhomogeneous distribution of Mn atoms in the porous layer between the nanorods that form precipitates in the Si substrate before or during the annealing step amongst the GaN nanorods.

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

RF-MBE Growth of InN Dots on N-polar GaN Grown on Vicinal c-plane Sapphire

2004 ◽  
Vol 831 ◽  
Author(s):  
Naoki Hashimoto ◽  
Naohiro Kikukawa ◽  
Song-Bek Che ◽  
Yoshihiro Ishitani ◽  
Akihiko Yoshikawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Radio Frequency Plasma ◽  
Mbe Growth ◽  
Frequency Plasma ◽  
Nominal Coverage

ABSTRACTWe have grown InN quantum dots (QDs) on nitrogen-polarity (N-polarity) GaN under-layer by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE), and systematically investigated growth mechanism of the InN dots. The InN QDs with the N-polarity could be grown at about 500°C, which was much higher than that of previous reports on InN dots grown by MBE. When the nominal coverage of InN became more than 1 mono-layer (ML), lattice relaxation of InN occurred and high density InN dots were uniformly formed. These results indicated that InN dots were formed by Stranski-Krastanov (S-K) growth mode. For the InN deposition above about 8ML, InN dots tended to coalesce and resulted in remarakable decrease of the dots density.

Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy

2004 ◽  
Vol 21 (2) ◽  
pp. 410-413 ◽  
Author(s):  
Mei Zeng-Xia ◽  
Du Xiao-Long ◽  
Zeng Zhao-Quan ◽  
Guo Yang ◽  
Wang Jian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
Step Growth

Growth and Characterization of AlBN Polycrystalline Thin Film by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

2006 ◽  
Vol 301 ◽  
pp. 95-98 ◽  
Author(s):  
Masashi Yamashita ◽  
Yukari Ishikawa ◽  
Hitoshi Ohsato ◽  
Noriyoshi Shibata
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Radio Frequency Plasma ◽  
Group Iii ◽  
Frequency Plasma

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.

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