Metal Organic Deposition of REBa2Cu3O7-y Films from Metal Trifluoroacetate Precursors

2000 ◽  
Vol 659 ◽  
Author(s):  
Tetsuji Honjo ◽  
Hiroshi Fuji ◽  
Daxiang Huang ◽  
Yuichi Nakamura ◽  
Teruo Izumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Crystal Growth ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Experimental Results ◽  
Experimental Conditions ◽  
Metal Organic ◽  
Metal Organic Deposition

ABSTRACTMetal organic deposition (MOD) process using metal trifluoroacetate (TFA) precursors was applied to the Nd1+XBa2−XCu3Oy (Nd123) and the Tc dependence on experimental conditions such as the oxygen partial pressure (PO2) and the substrate temperature (Ts) for annealing was investigated. Thin films grown on SrTiO3 substrates at Ts = 800°C under PO2 = 300 ppm showed a Tc value of 89 K. However, from the results of TEM-EDS measurements, the substitution values of x in the Nd123 films increased from the substrate toward the surface in the film. These experimental results could be thermodynamically explained by the following model. The basic idea of the model is that the Ba potential in the precursor decreases by coarsening of BaF2 particles during the annealing for the Nd123 crystal growth. This model predicts that the small substitution value can be obtained with a higher growth rate of the Nd123 phase under low PO2.

Highly conductive AZO thin films obtained by rationally optimizing substrate temperature and oxygen partial pressure

2017 ◽  
Vol 644 (1) ◽  
pp. 190-196 ◽  
Author(s):  
Yong Zeng ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Feng Zhu ◽  
Xianzhe Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure

Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1233-1236
Author(s):  
Yasuhiro Shigetoshi ◽  
Susumu Tsukimoto ◽  
Hidehisa Takeda ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Pressure Of Oxygen ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

Preparation of BaRuO3 and BaIrO3 Films by Laser Ablation

2007 ◽  
Vol 336-338 ◽  
pp. 730-734 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Akihiko Ito ◽  
Y. Kaneko ◽  
Takashi Goto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Preparation Conditions ◽  
Structure Morphology ◽  
Metallic Conduction

BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5x10-6 m and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4x10-2 to 4x10-4 m with decreasing Tsub from 1073 to 573 K.

Structural Characterization and Raman Studies of SrBi2Ta0.8Nb1.2O9 Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
S. Srinivas ◽  
R. R. Das ◽  
J. Mercoda ◽  
E. R. Fachini ◽  
W. Perez ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Growth Conditions ◽  
Oxygen Ions ◽  
Raman Modes ◽  
Deposited Films

AbstractThe effect of growth conditions such as substrate temperature and oxygen partial pressure on the microstructure and properties of pulsed laser deposited SBTN thin films on Si(100) and MgO(100) substrates have been studied. Crystallization of films begins at room temperature but, the obtained phase was non-ferroelectric. The influence of oxygen pressure (150 to 450 mTorr) on crystallinity of the films deposited on Si(100) at 750°C is negligible. XPS studies of as-deposited films reveal that the oxygen vacancies are preferably present near the Bi ions at the Bi2O2 layers and vary with substrate temperature and oxygen partial pressure. Also, XPS studies of Sr 3d core level for SBTN films suggest that the oxygen ions in the Sr(Ta/Nb)2O7 perovskite layers are much more stable than those in the Bi2O2 layers. Micro-Raman studies of SBTN films deposited below 700°C show Raman modes of a non -ferroelectric phase.

Growth and characterization of Titanium Niobium Oxide (TiNb2O7) thin films

2015 ◽  
Vol 1805 ◽  
Author(s):  
Venkateswarlu Daramalla ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Laser Fluence ◽  
Photoelectron Spectroscopy ◽  
Binding Energies ◽  
Experimental Conditions ◽  
Monoclinic Crystal

ABSTRACTComprehensive studies were done on the growth and characterization of TiNb2O7 (TNO) complex oxide thin films by pulsed laser deposition for the first time. The TNO thin films were successfully grown on Pt(200)/TiO2/SiO2/Si(100) substrates. The structure, surface morphology and chemical properties of as-grown thin films were studied as function of deposition temperature, pressure and laser fluence. The GIXRD and HRTEM analyses revealed that the as-grown TNO films were in the monoclinic crystal structure and independent of laser fluence. The HAADF STEM elemental mapping confirms the uniform composition of Ti, Nb and O in TNO thin films. The atomic force microscopy and field emission scanning microscopy shows that, the surface morphology and microstructure of TNO films varied significantly with respect to experimental conditions. The X-ray photoelectron spectroscopy quantitative results indicated that the binding energies of Ti and Nb elements shifted towards right with increasing oxygen partial pressure. The effects of oxygen partial pressure and laser fluence on as-grown TNO films were studied.

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