Structural Characterization and Raman Studies of SrBi2Ta0.8Nb1.2O9 Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
S. Srinivas ◽  
R. R. Das ◽  
J. Mercoda ◽  
E. R. Fachini ◽  
W. Perez ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Growth Conditions ◽  
Oxygen Ions ◽  
Raman Modes ◽  
Deposited Films

AbstractThe effect of growth conditions such as substrate temperature and oxygen partial pressure on the microstructure and properties of pulsed laser deposited SBTN thin films on Si(100) and MgO(100) substrates have been studied. Crystallization of films begins at room temperature but, the obtained phase was non-ferroelectric. The influence of oxygen pressure (150 to 450 mTorr) on crystallinity of the films deposited on Si(100) at 750°C is negligible. XPS studies of as-deposited films reveal that the oxygen vacancies are preferably present near the Bi ions at the Bi2O2 layers and vary with substrate temperature and oxygen partial pressure. Also, XPS studies of Sr 3d core level for SBTN films suggest that the oxygen ions in the Sr(Ta/Nb)2O7 perovskite layers are much more stable than those in the Bi2O2 layers. Micro-Raman studies of SBTN films deposited below 700°C show Raman modes of a non -ferroelectric phase.

Highly conductive AZO thin films obtained by rationally optimizing substrate temperature and oxygen partial pressure

2017 ◽  
Vol 644 (1) ◽  
pp. 190-196 ◽  
Author(s):  
Yong Zeng ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Feng Zhu ◽  
Xianzhe Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure

Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1233-1236
Author(s):  
Yasuhiro Shigetoshi ◽  
Susumu Tsukimoto ◽  
Hidehisa Takeda ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Pressure Of Oxygen ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

Preparation of BaRuO3 and BaIrO3 Films by Laser Ablation

2007 ◽  
Vol 336-338 ◽  
pp. 730-734 ◽  
Author(s):  
Hiroshi Masumoto ◽  
Akihiko Ito ◽  
Y. Kaneko ◽  
Takashi Goto
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Preparation Conditions ◽  
Structure Morphology ◽  
Metallic Conduction

BaRuO3(BRO) and BaIrO3(BIO) thin films were prepared by laser ablation, and the effects of preparation conditions on the structure, morphology and electrical conductivity were investigated. BRO thin films deposited at oxygen partial pressure (PO2) = 13 Pa and substrate temperature (Tsub) < 573 K were amorphous. At Tsub = 573 K, the rhombohedral BRO thin films with (110) orientation were obtained. BRO thin films prepared at Tsub = 773 K and PO2= 13 Pa exhibited the resistivity of 5x10-6 m and showed metallic conduction. BIO thin films deposited at PO2= 40 Pa and Tsub < 623 K were amorphous. Tsub > 623 K, the BIO thin films crystallized into a 6H structure were obtained. The resistivity of the BIO films at PO2= 40 Pa decreased from 1.4x10-2 to 4x10-4 m with decreasing Tsub from 1073 to 573 K.

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