A Novel Back-Reflecting UV-Assisted Metal-Induced Crystallization of Silicon on Glass

2001 ◽  
Vol 664 ◽  
Author(s):  
Leila Rezaee ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz ◽  
Saber Haji ◽  
Ebrahim Asl Soleimani
Keyword(s):  
Silicon Film ◽  
Crystallization Rate ◽  
Ultra Violet ◽  
Hole Mobility ◽  
Metal Induced Crystallization ◽  
Polysilicon Films ◽  
Novel Method ◽  
Uv Photons ◽  
Lateral Crystallization ◽  
Induced Crystallization

ABSTRACTA novel method of UV-assisted metal-induced-crystallization is introduced to grow polysilicon films on ordinary glass at temperatures as low as 400°C. Annealing is accomplished in the presence of an ultra-violet exposure, leading to high crystallinity of the silicon film as confirmed by XRD, TEM and SEM analyses. A back-reflecting chromium layer is incorporated to further trap UV photons and enhance their absorption in the silicon film. This results in a significant increase in the crystallization rate as studied by XRD spectroscopy. A growth rate of 2 µm/hr is observed at 400 °C, when employing this method for lateral crystallization. Thin-film transistors fabricated using the proposed UV-assisted MILC show a threshold voltage of 1V and hole mobility of about 50 cm2/V.s.

Low Tempeature Lateral Crystallization of Amorphous Silicon on Glass

2002 ◽  
Vol 715 ◽  
Author(s):  
Leila Rezaee ◽  
Aarash Akhavan ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Ultra Violet ◽  
Sem Analysis ◽  
Lateral Growth ◽  
Metal Induced Crystallization ◽  
Lateral Growth Rate ◽  
Lateral Crystallization ◽  
Induced Crystallization

AbstractLow temperature lateral growth of amorphous silicon films has been achieved on thin flexible glasses using ultra-violet assisted metal-induced crystallization technique. 125μm ordinary glass substrate is sputter-coated with 1500Å chromium and a 1000Å SiN layer, respectively. 1000Å Si film was deposited using e-beam evaporation at a temperature of 350°C. Equally spaced dots of nickel pads with 140μm separation were used as seed of crystallization of a-Si layer. Crystallinity of the samples was studied using XRD, SEM and optical microscopy. Some crystallographic etchants were used to develop the crystal orientations for SEM analysis. Based on this study, a lateral growth rate of 2μm/hr is obtained at a temperature of 380°C. Activation energy of 1.4 to 1.5eV is extracted for this UV-assisted MILC process.

A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Kianoush Naeli ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz ◽  
Saber Haji ◽  
Ebrahim A. Soleimani
Keyword(s):  
Electric Field ◽  
Grain Growth ◽  
Negative Electrode ◽  
Crystallization Rate ◽  
Lateral Growth ◽  
Annealing Temperatures ◽  
Lateral Crystallization ◽  
Si Films ◽  
First Time ◽  
Induced Crystallization

ABSTRACTThe effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

Analytical Studies of the Capping Layer Effect on Aluminum Induced Crystallization of Amorphous Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Husam Abu-Safe ◽  
Abul-Khair M. Sajjadul-Islam ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Layer Structure ◽  
Silicon Layer ◽  
Nodule Formation ◽  
Capping Layer ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Layer Effect ◽  
Polysilicon Films ◽  
Induced Crystallization

AbstractThe effect of capping layer on metal induced crystallization of amorphous silicon was studied. Three sets of samples were prepared in this study. All samples had the basic layer structure of amorphous silicon layer deposited on a glass substrate. This was followed by a thin aluminum layer deposition. The second and third sets, however, had a third layer of amorphous silicon with thicknesses of 20 and 50 nm, respectively. These layers were deposited on top of the aluminum. The samples were annealed at 400°C for 15, 30 and 45 minutes. The crystallization fraction in the resultant films was analyzed using X-Ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and atomic force microscopy. It was observed that the capping layer reduces nodule formation improving the smoothness of the crystallized polysilicon films.

Effect Of Nickel In Large Grain Poly-Si Film Formed By Nickel Induced Lateral Crystallization and New Grain Enhancement Method

2000 ◽  
Vol 609 ◽  
Author(s):  
W.Y. Chan ◽  
A.M. Myasnikov ◽  
M.C. Poon ◽  
C.Y. Yuen ◽  
P. G. Han ◽  
...  
Keyword(s):  
Low Cost ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
3 Dimensional ◽  
Enhancement Method ◽  
Novel Method ◽  
Amorphous Si ◽  
Lateral Crystallization ◽  
Novel Applications ◽  
Soi Substrates

ABSTRACTLarge grain poly-silicon film (poly-Si) with high material quality and uniformity can have numerous novel applications such as providing a low cost alternative to form silicon-on-insulator (SOI) substrates and a breakthrough technology to ultra-dense 3-dimensional multi-layer SOI like devices and circuits. Nickel Induced Lateral Crystallization (NILC) of amorphous Si (a-Si) has been studied intensively, yet the grains are still small (∼ 1 μm). Recently, we have reported a novel method by combining NILC and a new annealing (at above 900 °C) to form poly-Si film with very large grains ranging from 10 μm to 100 μm. The film has good quality and the TFTs formed are highly comparable to SOI TFTs. This work further reports the effect of Ni to the new large-grain poly-Si film.

Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si

2010 ◽  
Vol 663-665 ◽  
pp. 654-657
Author(s):  
Guang Wei Wang ◽  
Hong Xing Zheng ◽  
Su Ying Yao ◽  
Feng Shan Zhang
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Critical Value ◽  
Physical Analysis ◽  
Electric Field Effect ◽  
Static Electric Field ◽  
Metal Induced Crystallization ◽  
Electromigration Effect ◽  
Lateral Crystallization ◽  
Induced Crystallization

Amorphous silicon (a-Si) film crystallized by Ni-induced lateral crystallization under static electric field was analyzed. It has been demonstrated that Ni-induced lateral crystallization of a-Si is directional with electric field. Moreover, there exists a critical value of electric field strength, below which the rate of Ni-induced lateral crystallization of a-Si increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well based on electromigration effect.

Metal induced crystallization of a-Si using a nano-layer of silicon oxide mask (MMIC)

2010 ◽  
pp. NA-NA
Author(s):  
Chunya Wu ◽  
Zhiguo Meng ◽  
Xuedong Li ◽  
Shuyun Zhao ◽  
Zhaojun Liu ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Metal Induced Crystallization ◽  
Induced Crystallization
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