Physical Analysis of Electric Field Effect on Metal-Induced Crystallization of a-Si

2010 ◽  
Vol 663-665 ◽  
pp. 654-657
Author(s):  
Guang Wei Wang ◽  
Hong Xing Zheng ◽  
Su Ying Yao ◽  
Feng Shan Zhang
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Critical Value ◽  
Physical Analysis ◽  
Electric Field Effect ◽  
Static Electric Field ◽  
Metal Induced Crystallization ◽  
Electromigration Effect ◽  
Lateral Crystallization ◽  
Induced Crystallization

Amorphous silicon (a-Si) film crystallized by Ni-induced lateral crystallization under static electric field was analyzed. It has been demonstrated that Ni-induced lateral crystallization of a-Si is directional with electric field. Moreover, there exists a critical value of electric field strength, below which the rate of Ni-induced lateral crystallization of a-Si increases remarkably with the increase of field strength, while above which the rate will decrease instead. This phenomenon can be interpreted well based on electromigration effect.

Electric-field effect on metal induced crystallization of amorphous silicon

2004 ◽  
Vol 451-452 ◽  
pp. 320-323 ◽  
Author(s):  
Kyung Ho Kim ◽  
Ah Young Kim ◽  
Seong Jin Park ◽  
Kyu Chang Park ◽  
Jin Jang
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Electric Field Effect ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

scholarly journals Modeling Static Electric Field Effect on Nematic Liquid Crystal Director Orientation in Side-Electrode Cell

2018 ◽  
Vol 173 ◽  
pp. 03002 ◽  
Author(s):  
Alexander Ayriyan ◽  
Edik Ayryan ◽  
Alexandre Egorov ◽  
Maria Dencheva-Zarkova ◽  
Georgi Hadjichristov ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Electric Field ◽  
Nematic Liquid Crystal ◽  
Finite Difference Methods ◽  
Electric Field Effect ◽  
Dimensional Model ◽  
Static Electric Field ◽  
Electrode Cell ◽  
Field Influence ◽  
Director Orientation

A two-dimensional model of Fredericks effect was used for the investigation of the static electric field influence on nematic liquid crystal director orientation in the side-electrode cell. The solutions of the equations describing the model were obtained by finite-difference methods. Fredericks transition threshold for the central part of the cell, as well as dependencies of the distribution of the director orientation patterns on the electric field and location, were obtained. The numerical results are found to agree qualitatively with the experiment. Further investigations are needed to elucidate completely the Fredericks effect.

A Novel Back-Reflecting UV-Assisted Metal-Induced Crystallization of Silicon on Glass

2001 ◽  
Vol 664 ◽  
Author(s):  
Leila Rezaee ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz ◽  
Saber Haji ◽  
Ebrahim Asl Soleimani
Keyword(s):  
Silicon Film ◽  
Crystallization Rate ◽  
Ultra Violet ◽  
Hole Mobility ◽  
Metal Induced Crystallization ◽  
Polysilicon Films ◽  
Novel Method ◽  
Uv Photons ◽  
Lateral Crystallization ◽  
Induced Crystallization

ABSTRACTA novel method of UV-assisted metal-induced-crystallization is introduced to grow polysilicon films on ordinary glass at temperatures as low as 400°C. Annealing is accomplished in the presence of an ultra-violet exposure, leading to high crystallinity of the silicon film as confirmed by XRD, TEM and SEM analyses. A back-reflecting chromium layer is incorporated to further trap UV photons and enhance their absorption in the silicon film. This results in a significant increase in the crystallization rate as studied by XRD spectroscopy. A growth rate of 2 µm/hr is observed at 400 °C, when employing this method for lateral crystallization. Thin-film transistors fabricated using the proposed UV-assisted MILC show a threshold voltage of 1V and hole mobility of about 50 cm2/V.s.

A New Field-Aided Germanium-Induced Lateral Crystallization of Silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Kianoush Naeli ◽  
Shamsoddin Mohajerzadeh ◽  
Ali Khakifirooz ◽  
Saber Haji ◽  
Ebrahim A. Soleimani
Keyword(s):  
Electric Field ◽  
Grain Growth ◽  
Negative Electrode ◽  
Crystallization Rate ◽  
Lateral Growth ◽  
Annealing Temperatures ◽  
Lateral Crystallization ◽  
Si Films ◽  
First Time ◽  
Induced Crystallization

ABSTRACTThe effect of an electric field on germanium-seeded lateral crystallization of a-Si is studied for the first time and compared to this effect in Ni-induced lateral growth. While the crystallization rate is lower when Ge is used as the nucleation seed and annealing should be done at higher temperatures, filed-aided crystallization shows a similar behavior to that observed for Ni-induced crystallization. Optical microscopy results indicate that grain growth starting from the negative electrode occurs in Si films at annealing temperatures higher than 480°C, while the applied electric field ranges form 200 to 1400V/cm. SEM was also used to confirm the crystallinity of the films.

Critical Electric Field of InGaN p-i-n Solar Cell

2013 ◽  
Vol 284-287 ◽  
pp. 1168-1172
Author(s):  
Der Yuh Lin ◽  
Chao Yu Chi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
High Efficiency ◽  
Physical Models ◽  
Electric Field Effect ◽  
Type Layer ◽  
P Type

We present a study of electric field effect on the efficiency of GaN/In0.1Ga0.9N p-i-n solar cells by using the advanced physical models of semiconductor devices (APSYS) simulation program. In this study, the electric field strength and other parameters such as optimum thickness of p-type layer and efficiency of GaN/In0.1Ga0.9N p-i-n solar cells with different i-layer thicknesses have been performed. On the basis of simulating results, for a high efficiency solar cell, it is found that the optimum p-type layer concentration is above 4×1016cm-3and the suitable thickness is between 0.1 to 0.2 μm. For different i-layer thickness and p-doping concentrations, a critical electric field (Fc) has been found at 100 kV/cm. It is worth to note that when the electric field strength of i-layer below Fc value, the solar cell efficiency will dramatically decrease. Thus Fc can be seen as an index for acquiring the quality of solar device.

Effect of Ni and Al on the Low-Temperature Field Aided Lateral Crystallization (FALC)

1998 ◽  
Vol 508 ◽  
Author(s):  
Sang-Hyun Park ◽  
Seung-Ik Jun ◽  
Chan-Jae Lee ◽  
Yong-Ho Yang ◽  
Duck-Kyun Choi
Keyword(s):  
Low Temperature ◽  
Electric Field ◽  
Crystallization Temperature ◽  
Metal Induced Crystallization ◽  
Crystallization Method ◽  
Free Region ◽  
Lateral Crystal ◽  
Lateral Crystallization ◽  
Si Films ◽  
Temperature Crystallization

AbstractThere have been many reports on the low temperature crystallization of amorphous silicon films by introducing a trace amount of metal impurity for low temperature poly-Si TFTs applications. MIC (Metal Induced Crystallization) uses various metals, to lower crystallization temperature. In this study, a new crystallization method called FALC (Field Aided Lateral Crystallization) in which an electric field is applied during the crystallization was explored. Among possible alloying elements with Si, Ni and Al were selected to compare the effects of these impurities on the FALC.A trace of Ni lowered the crystallization temperature of a-Si down to 5001C and induced lateral crystal growth along the electric field into the metal free region. But Al exhibited no such effect. A new crystallization method, FALC, showed considerably enhanced speed of lateral crystallization and a strong preferred orientation in crystallized Si-films.

Directional Field Aided Lateral Crystallization of Amorphous Silicon Thin Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Marek A. T. Izmajlowicz ◽  
Neil A. Morrison ◽  
Andrew J. Flewitt ◽  
William I. Milne
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Excimer Laser Annealing ◽  
Solid Phase Crystallization ◽  
Metal Induced Crystallization ◽  
Silicon Thin Films ◽  
Induced Crystallization

ABSTRACTFor application to active matrix liquid crystal displays (AMLCDs), a low temperature (< 600 °C) process for the production of polycrystalline silicon is required to permit the use of inexpensive glass substrates. This would allow the integration of drive electronics onto the display panel. Current low temperature processes include excimer laser annealing, which requires expensive equipment, and solid phase crystallization, which requires high temperatures. It is known that by adding small amounts of metals such as nickel to the amorphous silicon the solid phase crystallization temperature can be significantly reduced. The rate of this solid phase metal induced crystallization is increased in the presence of an electric field. Previous work on field aided crystallization has reported crystal growth that either proceeds towards the positive terminal or is independent of the direction of the electric field. In this work, extensive investigation has consistently revealed directional crystallization, from the positive to the negative terminal, of amorphous silicon thin films during heat treatment in the presence of an electric field. This is the first time that this phenomenon has been reported. Models have been proposed for metal induced crystallization with and without an applied electric field in which a reaction between Ni and Si to produce NiSi is the rate-limiting step. The crystallization rate is increased in the presence of an electric field through the drift of positive Ni ions.

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