A New Kinetic Model for The Nucleation and Growth of Self-Interstitial Clusters in Silicon
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ABSTRACTA model for nucleation and growth of {311} defects is proposed on the basis of thermodynamic and kinetic considerations. Simulated results are discussed and compared to experimental results found in the literature. According to our model it is found that formation energies of self-interstitial clusters depends on the local interstitial supersaturation. Physical parameters extracted from experimental results by inverse modeling are in good agreement with recent values published in the literature.
2013 ◽
Vol 634-638
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pp. 1781-1785
2019 ◽
Vol 22
(2)
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pp. 88-93
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1991 ◽
Vol 56
(10)
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pp. 2020-2029
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1996 ◽
Vol 05
(04)
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pp. 653-670
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