scholarly journals Boron Segregation and Electrical Properties in Polycrystalline SiGeC

2001 ◽  
Vol 669 ◽  
Author(s):  
E. J. Stewart ◽  
M. S. Carroll ◽  
J.C. Sturm
Keyword(s):  
Single Layer ◽  
Separate Experiment ◽  
Electrical Measurements ◽  
Oxide Interface ◽  
Boron Segregation ◽  
Boron Doped ◽  
Layer Sample ◽  
High Boron ◽  
Boron Penetration

ABSTRACTPreviously, it has been reported that PMOS capacitors with heavily boron-doped polycrystalline SiGeC gates are less susceptible to boron penetration than those with poly Si gates [1]. Boron appears to accumulate in the poly SiGeC layers during anneals, reducing boron outdiffusion from the gate despite high boron levels in the poly SiGeC at the gate/oxide interface. In this abstract, we report clear evidence of strong boron segregation to polycrystalline SiGeC layers from poly Si, with boron concentration in poly SiGeC (Ge=25%, C=1.5%) increasing to four times that of adjacent poly Si layers. A separate experiment confirms that this result is not due to any SIMS artifacts. Electrical measurements of heavily in-situ doped single layer samples show that the conductivity of poly SiGeC is similar to poly Si and remains roughly constant with annealing at 800°C. However, in a two-layer sample where the poly SiGeC is initially lightly doped and subsequently heavily doped by diffusion by from an adjacent poly Si layer, conductivity appears lower than in poly Si.

A Comparison of Mos Devices with In-Situ Boron Doped Polysilicon and Poly Sige Gates Deposited in an Rtcvd System Using S12H6 and B2H6 Gas Mixture

1998 ◽  
Vol 525 ◽  
Author(s):  
M. R. Mirabedini ◽  
V. Z-Q Li ◽  
A. R. Acker ◽  
R. T. Kuehn ◽  
D. Venables ◽  
...  
Keyword(s):  
Flat Band ◽  
Gas Mixture ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Boron Doped ◽  
Depletion Effect ◽  
Polysilicon Films ◽  
Sims Analysis ◽  
Boron Penetration

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.

Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs

1998 ◽  
Vol 525 ◽  
Author(s):  
A. Srivastava ◽  
H. H. Heinisch ◽  
E. Vogel ◽  
C. Parker ◽  
C. M. Osburn ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characterization ◽  
Deposition Process ◽  
Gate Oxides ◽  
Boron Doped ◽  
Excellent Control ◽  
Lower Temperature ◽  
Boron Penetration

ABSTRACTThe quality and composition of ultra-thin 2.0 nm gate dielectrics advocated for the 0.1 μm technology regime is expected to significantly impact gate tunneling currents, P+-gate dopant depletion effects and boron penetration into the substrate in PMOSFETs. This paper presents a comparative assessment of alternative grown and deposited gate dielectrics in sub-micron fabricated devices. High quality rapid-thermal CVD oxides and oxynitrides are examined as alternatives to conventional furnace grown gate oxides. An alternative gate process using in-situ boron doped and RTCVD deposited poly-Si is explored. PMOSFETs with Leff down to 0.06 μm were fabricated using a 0.1 μm technology. Electrical characterization of fabricated devices revealed excellent control of gate-boron depletion with the in-situ gate deposition process in all devices. Boron penetration of 2.0 nm gate oxides was effectively controlled by the use of a lower temperature RTA process. The direct tunneling leakage, although significant at these thicknesses, was less than 1 mA/cm2 at Vd = −1.2 V for all dielectrics. MOSFETs with comparable drive currents and excellent junction and off-state leakages were obtained with each dielectric.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

A New, Nearly Single-Domain Surface Structure of Homoepitaxial Diamondr (001) Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Yalei Kuang ◽  
Naesung Lee ◽  
Andrzej Badzian ◽  
Teresa Badzian ◽  
Tien T. Tsong
Keyword(s):  
Surface Structure ◽  
Natural Diamond ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Domain ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped ◽  
Step Edges

AbstractBoron-doped homoepitaxial diamond films were grown on natural diamond (001) substrates using microwave-assisted plasma chemical vapor deposition techniques. The surface structures were investigated using scanning tunneling microscopy (STM). This showed a dimertype 2×1 reconstruction structure with single-layer steps where dimer rows on the upper terrace are normal to or parallel to the step edges. We found that dimer rows parallel to the step edges are much longer than those normal to the step edges. The nearly single-domain surface structure observed by STM is in agreement with the low-energy electron diffraction (LEED) patterns from these surfaces. The high atomic resolution STM image showed that the local 1×1 configurations exist.

scholarly journals Soil physico-chemical characterization in the different soil layers of National Maize Research Program, Rampur, Chitwan, Nepal

2018 ◽  
Vol 3 (1) ◽  
pp. 28-44
Author(s):  
Dinesh Khadka ◽  
Sushil Lamichhane ◽  
Amit P Timilsina ◽  
Bandhu R Baral ◽  
Kamal Sah ◽  
...  
Keyword(s):  
Research Program ◽  
Soil Structure ◽  
Sandy Loam ◽  
Chemical Properties ◽  
Single Layer ◽  
Chemical Characterization ◽  
Bottom Layer ◽  
Soil Parameters ◽  
Physico Chemical

Soil pit digging and their precise study is a decision making tool to assess history and future of soil management of a particular area. Thus, the present study was carried out to differentiate soil physico-chemical properties in the different layers of excavated pit of the National Maize Research Program, Rampur, Chitwan, Nepal. Eight pits were dug randomly from three blocks at a depth of 0 to 100 cm. The soil parameters were determined in-situ, and in laboratory for texture, pH, OM, N, P (as P2O5), K (as K2O), Ca, Mg, S, B, Fe, Zn, Cu and Mn of collected soils samples of different layers following standard analytical methods at Soil Science Division, Khumaltar. The result revealed that soil structure was sub-angular in majority of the layers, whereas bottom layer was single grained. The value and chrome of colour was increasing in order from surface to bottom in the majority pits. Similarly, the texture was sandy loam in majority layers of the pits. Moreover, four types of consistence (loose to firm) were observed. Furthermore, mottles and gravels were absent in the majority layers. Likewise, soil was very to moderately acidic in observed layers of majority pits, except bottom layer of agronomy block was slightly acidic. Regarding fertility parameters (OM, macro and micronutrients), some were increasing and vice-versa, while others were intermittent also. Therefore, a single layer is not dominant for particular soil physico-chemical parameters in the farm. In overall, surface layer is more fertile than rest of the layers in all the pits.     

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

1992 ◽  
Vol 21 (1) ◽  
pp. 61-64 ◽  
Author(s):  
M. Sanganeria ◽  
D. T. Grider ◽  
M. C. öztürk ◽  
J. J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped

In Situ ATR-IR Observation of the Electrochemical Oxidation of a Polycrystalline Boron-Doped Diamond Electrode in Acidic Solutions

2018 ◽  
Vol 122 (48) ◽  
pp. 27456-27461 ◽  
Author(s):  
Taiga Ogose ◽  
Seiji Kasahara ◽  
Norihito Ikemiya ◽  
Nagahiro Hoshi ◽  
Yasuaki Einaga ◽  
...  
Keyword(s):  
Electrochemical Oxidation ◽  
Boron Doped Diamond ◽  
Acidic Solutions ◽  
Diamond Electrode ◽  
Boron Doped ◽  
Boron Doped Diamond Electrode
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