scholarly journals Magnetic characterization of (001) and (111) Ni films epitaxially grown on MgO

2001 ◽  
Vol 674 ◽  
Author(s):  
R. A. Lukaszew ◽  
V. Stoica ◽  
R. Clarke
Keyword(s):  
Film Growth ◽  
Chemical Interaction ◽  
Hysteresis Loops ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Silicon Substrates

ABSTRACTOne interesting application of epitaxial magnetic thin films is to use them as one of the electrodes in a spin-dependent tunneling junction, in order to use the magnetocrystalline anisotropy to define the required two states of the magnetization. [1] In our preliminary work, we prepared epitaxial magnetic films on copper buffer layers grown on silicon substrates. [2] The single crystalline quality of the films was particularly evident in the magnetization hysteresis loops, showing a sharp reversal at fairly high fields (120 Oe), when the samples were magnetized along the crystallographic easy axis. One technological disadvantage in this type of samples is the chemical interaction between the metallic layers and the silicon substrate.In order to explore the possibility of epitaxial magnetic films on less reactive substrates, we studied the growth on MgO substrates. We have shown that it is possible to obtain epitaxial (001) and (111) Ni films grown on MgO substrates. [3] In particular we observed that the crystalline quality of the films improved considerably after 10 nm of film growth. We will now present our studies on the magnetic properties of these films, particularly the azimuthal dependence of the magnetization reversal using MOKRE, correlating our finding with the structural characterization obtained with RHEED, STM and XRD.

Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 231-234 ◽  
Author(s):  
Marc Portail ◽  
M. Nemoz ◽  
Marcin Zielinski ◽  
Thierry Chassagne
Keyword(s):  
Flow Rate ◽  
Morphological Characterization ◽  
Crystalline Quality ◽  
Silicon Substrates ◽  
Interfacial Defects ◽  
Twin Defects ◽  
Sic Films

The structural and morphological modifications induced by the carbonization stage upon 3C-SiC heteroepitaxial films grown on (111) and (100) oriented silicon substrates have been investigated. The crystalline quality of the films is strongly dependent on the carbonization parameters (propane flow rate and duration of carbonization). The (111) heteroepitaxial films coalesce more rapidly and present a lower dependence on the carbonization conditions than (100) films. By comparing the evolution of the interfacial defects (voids) density with existing models, we show that this is related to the initial mechanisms occurring during the carbonization stage. The twin defects densities on (111), (100) and (211) films are also investigated and the role of the only carbonization stage on their formation is studied.

Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE

2015 ◽  
Vol 414 ◽  
pp. 15-20 ◽  
Author(s):  
Pornsiri Wanarattikan ◽  
Sakuntam Sanorpim ◽  
Somyod Denchitcharoen ◽  
Kenjiro Uesugi ◽  
Shigeyuki Kuboya ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Crystalline Quality ◽  
Step Growth

The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Oxygen Concentration ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Temperature Growth ◽  
Gan Buffer Layer

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

Characterization of the crystalline quality of β-SiC formed by ion beam synthesis

2006 ◽  
Vol 249 (1-2) ◽  
pp. 851-855 ◽  
Author(s):  
S. Intarasiri ◽  
A. Hallén ◽  
T. Kamwanna ◽  
L.D. Yu ◽  
G. Possnert ◽  
...  
Keyword(s):  
Ion Beam ◽  
Crystalline Quality ◽  
Ion Beam Synthesis

New conductive IBAD buffer for HTS applications

2001 ◽  
Vol 689 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Juergen Dzick ◽  
Lars-Oliver Kautschor ◽  
Christian Jooss ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Film Growth ◽  
Incident Angle ◽  
Texture Evolution ◽  
Ion Beam ◽  
Buffer Layers ◽  
Electrically Conductive ◽  
Ito Thin Films ◽  
Beam Parameters

ABSTRACTBiaxially aligned Indium Tin Oxide (ITO) thin films to be used as electrically conductive buffer layers were prepared by an Ion-Beam Assisted Deposition (IBAD) process on various substrates. Two Kaufman ion sources with 2.5 cm diameter were employed for the assisting and the sputtering beam, respectively. All deposited films revealed (001) oriented film growth with a strong in-plane alignment. The degree of the in-plane orientation was studied depending on the ion-beam parameters and the incident angle. Investigations (TEM and X-ray) of the texture evolution of these IBAD films during film growth were carried out. An in-plane texture of 12.6°FWHM for a 1 μm thick film has been achieved so far. The quality of the buffer has been demonstrated by the subsequent deposition of high-current carrying YBCO-films deposited by thermal coevaporation using a 3–5 nm thick Y2O3 interlayer. A jc of 0.76 MA/cm2 (77K, 0T) has been obtained for a 1 cm × 1 cm sample with ITO of 20° FWHM.

Evidence and Characterization of Crystallographic Defect and Material Quality after SLIM-Cut Process

2011 ◽  
Vol 1323 ◽  
Author(s):  
Alex Masolin ◽  
Jan Vaes ◽  
Frederic Dross ◽  
Roberto Martini ◽  
Amaia Pesquera Rodriguez ◽  
...  
Keyword(s):  
Defect Density ◽  
Negative Impact ◽  
Deep Level ◽  
Silicon Substrates ◽  
Crystallographic Defect ◽  
Transient Spectroscopy ◽  
Electronic Activity ◽  
Crystallographic Defects

ABSTRACTThe SLIM-Cut process is a kerf-free wafering technique to obtain silicon substrates as thin as 50μm. The quality of the resulting material must be assessed to ensure that this innovative Si-foil approach does not jeopardize the potential efficiency of the final solar cell in terms of electronic activity, defect density and location. For that reason, we performed Microwave-Detected Photoconductance Decay (MW-PCD), Deep-Level Transient Spectroscopy (DLTS) and optical inspections after defect etching of the foils surface. Analyses indicate that SLIM-Cut generates crystallographic defects which create deep level traps that have a negative impact on the lifetime of the silicon foil. Nonetheless, a decrease of the thermal budget will lead to a reduction of plasticity and hence lower the amount of defects and increase the foil quality.

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