Current Gain of an AlGaN/GaN Heterojunction Bipolar Transistor

2001 ◽  
Vol 680 ◽  
Author(s):  
Yumin Zhang ◽  
P. Paul Ruden
Keyword(s):  
Electron Transport ◽  
Hybrid Model ◽  
Carrier Transport ◽  
Effective Field ◽  
Structure Design ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Design Parameters ◽  
Collector Current

ABSTRACTA novel hybrid model and simulation results for an advanced, graded base AlGaN/GaN heterojunction bipolar transistor structure are presented. The base of the n-p-n HBT examined has two parts, a linearly graded AlGaN layer on the emitter side and a heavily p-doped GaN layer on the collector side. In the hybrid model developed here the potential profile is first calculated self-consistently in the biased state taking into account ionized impurity charges, polarization charges, and majority carrier charges. The minority carrier transport is examined subsequently. Injection of electrons from the emitter is modeled as a thermionic emission process. The minority electron transport process in the graded region is drift-dominated due to the large built-in effective field strength. In the low-field GaN layer of the base, electron transport is assumed to be diffusion-dominated. High-level injection effects are modeled in the framework of the Gummel-Poon model. Example structure design parameters are presented and it is found that the calculated current gain can be greater than 25, with a collector current density of 104A/cm2.

scholarly journals Non-Graded Base Si/Ge Heterojunction Transistor

2019 ◽  
Vol 6 (1) ◽  
Author(s):  
Sam Mil'shtein ◽  
Harsha Purushothama Dombala ◽  
Oliver A Kia ◽  
Mukhammaddin Zinaddinov
Keyword(s):  
Wireless Communication ◽  
Power Amplifiers ◽  
Communication Systems ◽  
Carrier Transport ◽  
Lattice Mismatch ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Buffer Layers ◽  
Current Gain ◽  
Wide Range

<strong>Innovation of Heterojunction Bipolar Transistor (HBT) technology is a major game changer in wireless communication, power amplifiers and other major fields of electronics. HBTs play a vital role in extending the advantages of silicon bipolar transistors to significantly higher levels. Research on HBT is focused on reducing cost and improving reliability.  These transistors have a wide range of applications namely, digital-to-analog converters, logarithmic amplifiers, RF chip sets for CDMA wireless communication systems, and power amplifiers for cellular communications. Our study focuses on utilizing the high mobility of pure Ge instead of often-used graded Ge base. Non-grtaded Ge base enhanses carrier transport which in turn increases the gain and cut-off frequency of the HBT. We have developed a high frequency, high current gain, high power gain and less noisy heterojunction bipolar transistor operating above 100GHz frequency. Lattice mismatch at emitter and collector junctions is compensated by inserting SiGe buffer layers. ATLAS TCAD - SILVACO software is used for modelling of this novel device.</strong>

GaAs Heterojunction Bipolar Transistor Device and IC Technology

1988 ◽  
Vol 144 ◽  
Author(s):  
Michael E. Kim ◽  
Aaron K. Oki ◽  
James B. Camou ◽  
Gary M. Gorman ◽  
Donald K. Umemoto ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Field Effect Transistors ◽  
Harmonic Distortion ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Noise Power ◽  
Single Chip ◽  
Collector Current ◽  
Rf Performance

ABSTRACTGaAs/AlGaAs N-p-n heterojunction bipolar transistor (GaAs HBT) device and integrated circuit technology which offers key advantages over advanced silicon bipolar and III-V compound field-effect transistors is maturing towards system insertion. The TRW device and IC fabrication process, basic HBT dc and RF performance, examples of device and IC applications, and technology qualification work are presented and serves as a basis for discussing overall technology issues and impact. A relaxed 3-μm emitter-up, self-aligned base ohmic metal (SABM) HBT process and simplified molecularbeam epitaxial profiles are used for near-term producibility. The HBTs have simultaneous fT, fmax≈20–40 GHz and dc current gain ß≈50–100 at collector current density JC=3 kA/cm2 and Early voltage VA≈200–300 with capability for MSI-LSI integration levels. Versatile dc-20 GHz analog, 3–6 Gb/s digital, and 2–3 Gs/s A/D conversion functions are demonstrated with a common 3-μm SABM HBT process which facilitates single-chip multifunctional capability. Key improvements are realized over Si bipolar and GaAs-related FET (e.g. MESFET and HEMT) approaches in operational frequency, gain-bandwidth product, harmonic distortion, 1/f noise, power consumption, and size reduction.

GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
S. H. PARK ◽  
S.-L. FU ◽  
P. K. L. YU ◽  
P. M. ASBECK
Keyword(s):  
Light Field ◽  
Defect Density ◽  
Forward Bias ◽  
Dark Field ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Selective Area Epitaxy ◽  
Metal Base ◽  
Selective Area

AbstractA study of selective area epitaxy (SAE) of GalnP lattice matched to GaAs is presented. The selectively regrown GaInP is used as the emitter of a novel heterojunction bipolar transistor (HBT) device structure. Successful SAE of GalnP on both dark field (mostly covered) and light field (mostly open) SiO2 masks is compared. To characterize the critical regrown heterojunction, diodes and HBTs were fabricated and measured. It is found that a pre-growth pause of either TEGa or PH3 results in forward bias characteristics with low leakage and an ideality factor of ~1.25, indicating low interfacial defect density. Non-self aligned regrown emitter HBTs grown with a dark field mask scheme have been fabricated. Devices with an emitter area of 3x12 μm exhibit small signal current gain up to 80 with an fT and fMAX of 22 GHz and 18 GHz, respectively. To further improve the performance of these devices, a structure with a self-aligned refractory metal base contact and light field regrowth is proposed.

Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures

2000 ◽  
Vol 88 (3) ◽  
pp. 1600-1605 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Noriyuki Watanabe ◽  
Kazuo Watanabe ◽  
Takashi Kobayashi ◽  
Kazumi Wada
Keyword(s):  
Signal Intensity ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain

Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
Zhang Rong ◽  
Yoon Soon Fatt ◽  
Tan Kianhua ◽  
Sun Zhongzhe ◽  
Huang Qingfeng
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Base Material ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Collector Current ◽  
Carbon Doped ◽  
Base Current ◽  
Recombination Current

ABSTRACTThis paper reports the characteristics of GaInP/GaAs heterojunction bipolar transistor (HBT) with carbon-doped GaAs base layer grown by solid source molecular beam epitaxy (SSMBE) using carbon tetrabromide (CBr4) as p-type dopant precursor. Hydrofluoric acid (HF) was used to passivate the GaInP/GaAs HBTs. At base bias voltages below 0.8V in the Gummel plot, the base current of large-area devices after HF treatment was greatly reduced. This indicates that the extrinsic base surface recombination current was greatly reduced. After HF treatment, detailed DC characterization of the device performance from 300K to 380K was carried out and the carrier transport properties were investigated. The base current and collector current ideality factors at 300K were 1.12 and 1.01, respectively. This indicates that the space- charge region recombination current in the base is insignificant. From the temperature- dependent Gummel plot, the activation energies of collector current and base current were obtained. For the collector current, the activation energy is 1.4eV, which is close to the bandgap of the GaAs base. This indicates that the collector current is determined by the drift-diffusion process, in which an energy barrier of the same magnitude as the base bandgap is to be overcome by electrons before they reach the collector. For the base current, the activation energy is also 1.4eV, which is close to the bandgap of GaAs, indicating that band-to-band recombination plays a dominant role in the base current. No trap-related recombination was observed for the base and collector currents, which further indicates the high quality carbon-doped GaAs base material for the HBT structures.

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