A New Technique for High Speed X-Ray Double Crystal Rocking Curve analysis

1986 ◽  
Vol 69 ◽  
Author(s):  
B. K. Tanner ◽  
Chu Xi ◽  
D. K. Bowen
Keyword(s):  
High Speed ◽  
Rotation Axis ◽  
Curve Analysis ◽  
Scientific Instrument ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
A New Technique ◽  
Set Up ◽  
Rotation Stage

AbstractA novel technique for high speed X-ray double crystal rocking curve analysis of epitaxial layers is described. It employs specimen rotation about an axis almost normal to the Bragg planes in order to optimize Bragg plane tilts. Very rapid set-up is possible by peak searching using this rotation axis rather than the standard ω scan. A rotation stage suitable for a Bede Scientific Instrument Model 6 diffractometer is described and its performance assessed. Experimental and theoretical values of the shift in centroid of the ω scan rocking curve as a function of rotation angle are in excellent agreement.

X-Ray Rocking Curve Analysis of S-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Fatemi ◽  
P.E. Thompson ◽  
J. Chaudhuri ◽  
S. Shah
Keyword(s):  
Thin Film ◽  
Curve Analysis ◽  
Maximum Strain ◽  
Major Peak ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Positive Strain ◽  
Two Peaks

ABSTRACTThe effect of rapid thermal annealing on strain reduction in 1.15 MeV S-implanted GaAs wafers irradiated to a dose of 5 × 1014/cm2 has been studied by double-crystal x-ray diffraction technique. X-ray rocking curves exhibit characteristic thin film fringes between the peak of unstrained GaAs and the major peak of the strained region. The maximum strain, i.e., the separation between the two peaks, as well as the number of minor fringes decreases with increasing RTA temperature, while the relative spacing between the fringes remains constant. At temperatures above 900°C, the main peaks begin to overlap; however, a residual positive strain can be measured for temperatures as high as 1100°C.

Fine-rotation attachment to standard goniometers

2004 ◽  
Vol 37 (1) ◽  
pp. 62-66 ◽  
Author(s):  
P. Suortti ◽  
J. Keyriläinen ◽  
M. Fernández
Keyword(s):  
Torsion Angle ◽  
Rotation Angle ◽  
Linear Actuator ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Fine Focus ◽  
New Type ◽  
Rotation Stage ◽  
Double Crystal Diffractometer

A new type of fine-rotation stage has been constructed and tested. It can be attached to standard goniometers used in X-ray and neutron crystallography. The device consists of a shaft and a bar that is fitted tightly to a hole traversing the shaft. The diameter of the shaft is 5 to 10 times larger than the diameter of the bar and the length of the bar is about 5 times larger than the height of the shaft. The bottom of the shaft is attached to the top plate of the goniometer and a goniometer head can be fitted to the other end of the shaft. The free end of the bar is pushed tangentially by a linear actuator to produce a torsion moment at the shaft. The dimensions and materials of the prototype were chosen such that a 1 mm bend of the bar corresponded to a torsion angle of the shaft of about 20 µrad. The rotation angle was measured using a double-crystal diffractometer in the non-dispersive setting, with MoKα1radiation from a fine-focus X-ray tube. Accurately known angular deviations were produced by refraction in a prism and the shifts in the rocking-curve position were measured. The measured torsion angle agreed within 4% with the value calculated from the elastic constants and dimensions of the device. The repeatability of the angle was ±20 nrad (0.004 arcsec).

The Performance of Channel Cut Collimators for Precision X-Ray Diffraction Studies of Epitaxial Layers

1990 ◽  
Vol 208 ◽  
Author(s):  
Neil Loxley ◽  
D. Keith Bowen ◽  
Brian K. Tanner
Keyword(s):  
Grazing Incidence ◽  
Curve Analysis ◽  
Epitaxial Layers ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Experimental Performance ◽  
Low Background ◽  
X Ray ◽  
Angle Scattering

ABSTRACTReplacement of the pinhole collimator on a double axis X-ray diffractometer with a device incorporating a channel-cut crystal permits the beam to be pre-conditioned in angular divergence. We examine the merits of such devices, known as channel-cut collimators (CCC's), of different materials and reflections. The experimental performance of InP 004 and Si 022 CCC's is presented.With a reference crystal on the first axis, set in the dispersive peometry with respect to the CCC, conditioning in wavelength spread is achieved. Dispersion broadening is effectively eliminated and no resetting of the reference crystal is required when changing specimen materials or reflections. The devices have extremely low background and reduced Bragg tails. Application of the 4-reflection CCC to rocking curve analysis of thin epitaxial layers, ultra-low angle scattering from biological systems, grazing incidence reflectometry and triple axis diffraction of semi-conductors is discussed.

scholarly journals Влияние толщины пленки Pt на изменение текстуры и доли кристаллической фазы при ее отжиге

2020 ◽  
Vol 90 (5) ◽  
pp. 795
Author(s):  
Р.В. Селюков ◽  
В.В. Наумов
Keyword(s):  
Volume Fraction ◽  
Curve Analysis ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Texture Parameters ◽  
Sputter Deposited ◽  
Pt Films ◽  
H 20

Textured Pt films with thickness h=20-80 nm were sputter deposited on oxidized c-Si (100) wafers and annealed in vacuum at 500°C/60 min. The thickness dependencies of the crystalline texture parameters and of the fraction of crystalline phase δ are obtained for as-deposited and annealed films using X-ray diffraction. The determination of δ in textured films is carried out by the new method based on rocking curve analysis. It is found that annealing leads to the texture improvement and to the increasing of δ for all h. The less h, the stronger effects of texture improvement and of δ increasing. These results are explained by the annealing-induced formation of large secondary grains whose volume fraction increases as h decreases. The inhomogeneity of the depth distributions of texture parameters and of δ are investigated for the as-deposited Pt films.

Automated X Ray Topography and Rocking Curve Analysis: A Readability Study

1987 ◽  
Vol 31 ◽  
pp. 143-154 ◽  
Author(s):  
M. Fatemi
Keyword(s):  
Curve Analysis ◽  
X Ray Diffraction ◽  
Extreme Caution ◽  
Rocking Curve ◽  
X Ray ◽  
Production Type ◽  
Mode Of Operation ◽  
High Resolution Images ◽  
Microelectronics Industry ◽  
Defect Densities

AbstractThere is considerable interest in the microelectronics industry to obtain high-resolution images, as well as precise measures of defect densities in “ device quality” thin films and substrates. In the field of x-ray diffraction, research groups worldwide are intensely pursuing the relevant applications of computerized x-ray rocking curve analysis and topography. Production-type, on-site rocking curve instrumentation has already been introduced into the market, and potential uses of x-ray topography are also under consideration.In the present study, the merits and limitations of these two techniques are critically evaluated. Possible pitfalls of automated data collection are pointed out and conditions under which meaningful measurements may be made are explored. It is shown that reliable results may nearly always be obtained with reasonable care when each method is applied subject to its own mode of operation. However, extreme caution is needed when digitized data initially collected for topography is subsequently used for rocking curve analysis; otherwise, the correspondence between the interpretation and actual defect configuration may be vitiated. Thus, additional tests will be necessary to ensure the validity of the results.

X-ray Characterisation of Residual Surface Strains after Polishing of Silicon Wafers

1989 ◽  
Vol 33 ◽  
pp. 55-60 ◽  
Author(s):  
Linda Hart ◽  
D. Keith Bowen ◽  
Graham R. Fisher
Keyword(s):  
Silicon Wafers ◽  
Curve Analysis ◽  
Rocking Curve ◽  
Strain Profile ◽  
X Ray ◽  
Theoretical Simulations

AbstractDetailed x-ray double-axis rocking-curve analysis has been made of a series of silicon wafers, polished using various colloidal silicas with a number of different conditions. Significant differences, attributable to the polishing conditions, were observed in the tails of the rocking curves, using a four-reflection, non-dispersive beam conditioner. These have been compared with theoretical simulations in order to deduce the strain profile near the surface.

Defect structure analysis of polycrystalline materials by computer-controlled double-crystal diffractometer with position-sensitive detector

1983 ◽  
Vol 16 (1) ◽  
pp. 89-95 ◽  
Author(s):  
R. Yazici ◽  
W. Mayo ◽  
T. Takemoto ◽  
S. Weissmann
Keyword(s):  
Position Sensitive Detector ◽  
Polycrystalline Materials ◽  
Sensitive Detector ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Local Lattice ◽  
Position Sensitive ◽  
The Individual ◽  
Double Crystal Diffractometer

The method represents an extension of a previously developed X-ray double-crystal diffractometer method when a film was used to record the crystallite reflections, each reflecting crystallite being regarded as the second crystal of a double-crystal diffractometer. By utilizing a position-sensitive detector (PSD) with interactive computer controls, the tedious and limiting task of data acquisition and analysis is greatly simplified. The specimen is irradiated with crystal-monochromated radiation and the numerous microscopic spots emanating from the reflecting crystallites are recorded separately by the position-sensitive detector and its associated multichannel analyzer at each increment of specimen rotation. An on-line minicomputer simultaneously collects these data and applies the necessary corrections. This process is then automatically repeated through the full rocking-curve range. The computer carries out the rocking-curve analysis of the individual crystallite reflections as well as that of the entire reflecting crystallite population. The instrument is provided with a specimen translation device which permits analysis of large sections of solid specimens. Thus, sites of local lattice defects induced either mechanically, chemically or by radiation can rapidly be established and quantitatively determined in terms of rocking-curve parameters as well as imaged by X-ray topography, by inserting a film in front of the PSD. The versatility and usefulness of the method is demonstrated by examples given from studies of fracture, fatigue and stress-corrosion cracking of commercial alloys.

Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 82 ◽  
Author(s):  
T. S. Ananthanarayanan ◽  
R. G. Rosemeier ◽  
W. E. Mayo ◽  
J. H. Dinan
Keyword(s):  
Bragg Reflection ◽  
Strain Tensor ◽  
Epitaxial Films ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Density Maps ◽  
First Time ◽  
Considerable Body ◽  
Double Crystal Diffractometer

SUMMARYThere is a considerable body of work available illustrating the significance of X-ray rocking curve measurements in micro-electronic applications. For the first time a high resolution (100-150µm) 2-dimensional technique called DARC (Digital Autcmated Rocking Curve) topography has been implemented. This method is an enhancement of the conventional double crystal diffractometer using a real time 2-dimensional X-ray detector.Several materials have been successfully examined using DARC topography. Same of these include: Si, GaAs, AlGaAs, InGaAs, HgMnTe, Al, Inconel, steels, etc. By choosing the appropriate Bragg reflection multi-layered micro-electronic structures have been analyzed nondestructively. Several epitaxial films, including HgCdTe and ZnCdTe, grown by molecular beam epitaxy, have also been characterized using iARC topography. The rocking curve half width maps can be translated to dislocation density maps with relative ease. This technique also allows the deconvolution of the micro-plastic lattice strain ccaponent from the total strain tensor.

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