Refractory Thin-Film Metallizations with Controlled Stress and Electrical Resistivity

2001 ◽  
Vol 699 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Electrical Resistivity ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Residual Tensile Stress ◽  
Si Substrates ◽  
Chemical Inertness ◽  
Temperature Deposition ◽  
Beam Parameters

AbstractRhodium and iridium are refractory metals which possess intrinsically high electrical conductivity, and their chemical inertness enables their use at relatively high temperatures in microelectronics. However, due to the high Young's modulus of these materials, a residual tensile stress of hundreds of MPa is measured in evaporated thin films. New data is presented, demonstrating control over both the magnitude and the sign of the residual stress in such refractory thin films formed by means of ion-beam-enhanced physical vapor deposition on oxidized Si substrates. The electrical resistivity and stress are determined by controlling the substrate temperature, deposition rate and ion beam parameters. Thicker films are achieved in this manner, including films with near-zero residual stress.

Controlled Stress Refractory Metallizations

2001 ◽  
Vol 695 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Residual Tensile Stress ◽  
Electrically Conductive ◽  
Complete Control ◽  
Chemical Inertness

ABSTRACTRhodium and iridium are highly electrically conductive refractory metals, which can be used as current-carrying thin-film metallizations. Their chemical inertness further enables their application at relatively high temperatures. However, due to the high elastic modulus of such metals, a residual tensile stress of 300 to 400 MPa is measured in evaporated thin films. We present novel results evidencing complete control over both the magnitude and the sign of the residual stress in such refractory thin films. The metallic layers are deposited by means of ion-beam-enhanced physical vapor deposition and both electrical resistivity and stress are controlled. Controlling the stress in this manner has enabled achieving thicker films and films with near-zero residual stress.

Residual Stress Effects in Ferroelectric Thin Films

2003 ◽  
Vol 784 ◽  
Author(s):  
T. A. Berfield ◽  
N. R. Sottos ◽  
R. J. Ong ◽  
D. A. Payne
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Thin Layers ◽  
Residual Tensile Stress ◽  
Film Performance ◽  
Si Substrates ◽  
Interface Effects

ABSTRACTRecent developments in soft lithographic patterning enable the integration of functional ceramic thin films on a chip, rather than by adding discrete components to the system. As integrated device applications push the characteristic length scale of materials smaller and smaller, surface and interface effects play an important role, producing significant scientific challenges to the characterization of mechanical properties, performance and reliability. In this paper, we investigate the complex roles of microstructure, interface effects and residual stresses on ferroelectric thin film performance. Pb(Zr0.53Ti0.47)O3 films ranging in thickness from 190 nm to 500 nm were deposited by a sequential build up of sol-gel derived thin layers onto platinized Si substrates. Residual stresses in the films after thermal processing were observed and calculated from laser reflectance measurements of wafer curvature. Field-induced displacements were then measured by interferometric methods for films with well-characterized residual stress states. Results indicate significant increases in film performance with a decrease in measured residual tensile stress.

Effects Of Ar+ Ion Bombardment on the Nucleation and Growth of Ag Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
C.M. Cotell ◽  
J.A. Sprague ◽  
C.R. Gossett
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Film Growth ◽  
Ion Beam ◽  
Nucleation And Growth ◽  
Nucleation Behavior ◽  
Si Substrates ◽  
Film Nucleation ◽  
Pvd Film

ABSTRACTThin films of Ag were grown on amorphous C and <111= Si substrates with simultaneous Ar+ bombardment at energies ranging from 50–40,000 eV. For deposition of Ag on amorphous C, ion beam bombardment induced no changes in film nucleation behavior relative to evaporation (henceforth referred to as physical vapor deposition, PVD). Film growth was affected at the highest energy (40 keV); the grain size of the Ag films was increased by a factor of three. Rutherford Backscattering (RBS) measurements on Ag films on <111=Si bombarded with Ar+ at 1.5 keV showed that the Ag sputtering yield at film thicknesses <1.5 nm was less than for bulk Ag, in agreement with TRIM calculations. At 40 keV there was evidence for an additional effect of the ion beam due to recoil implantation or ion mixing. Electron diffraction from Ag fdms grown on <111= Si substrates with simultaneous Ar+ bombardment at either 1.5 keV or 40 keV showed evidence for only the expected phases: single crystal Si, polycrystalline Ag, and an amorphous phase that likely resulted from ion damage to the substrate.

Perpendicularly magnetized ferromagnetism in Mn/Al bilayer thin films on Si substrates induced by temperature dependent ion beam mixing

2021 ◽  
Author(s):  
Himani Khanduri ◽  
Saif A Khan ◽  
Mukesh C. Dimri ◽  
J. Link ◽  
Raivo Stern ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Ion Beam Mixing ◽  
Si Substrates

Crystallization and electrical resistivity of Cu2O and CuO obtained by thermal oxidation of Cu thin films on SiO2/Si substrates

2012 ◽  
Vol 520 (20) ◽  
pp. 6368-6374 ◽  
Author(s):  
L. De Los Santos Valladares ◽  
D. Hurtado Salinas ◽  
A. Bustamante Dominguez ◽  
D. Acosta Najarro ◽  
S.I. Khondaker ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Thermal Oxidation ◽  
Si Substrates

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

2012 ◽  
Vol 520 (6) ◽  
pp. 2073-2076 ◽  
Author(s):  
Xu Song ◽  
Kong Boon Yeap ◽  
Jing Zhu ◽  
Jonathan Belnoue ◽  
Marco Sebastiani ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Residual Stress Measurement ◽  
Focused Ion Beam Milling

scholarly journals Electrical characterization of aluminum (Al) thin films measured by using four- point probe method

2013 ◽  
Vol 8 (2) ◽  
pp. 31-36 ◽  
Author(s):  
GP Panta ◽  
DP Subedi
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Electrical Characterization ◽  
Probe Method ◽  
Glass Substrates ◽  
Engineering And Technology

This paper reports the results of electrical characterization of aluminum thin films. Uniform Al thin films were deposited by physical vapor deposition (PVD) technique on glass substrates. The electrical resistivity of the films as a function of film thickness was studied. These parameters have been measured by four-point probe method. The electrical resistivity was obtained by the measurement of current (in mA) and voltage in (mV) through the probe. The results showed that resistivity of the film decreases linearly with the film thickness in the range of the thickness studied in this work. Kathmandu University Journal of Science, Engineering and Technology Vol. 8, No. II, December, 2012, 31-36 DOI: http://dx.doi.org/10.3126/kuset.v8i2.7322

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