Controlled Stress Refractory Metallizations

2001 ◽  
Vol 695 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Residual Tensile Stress ◽  
Electrically Conductive ◽  
Complete Control ◽  
Chemical Inertness

ABSTRACTRhodium and iridium are highly electrically conductive refractory metals, which can be used as current-carrying thin-film metallizations. Their chemical inertness further enables their application at relatively high temperatures. However, due to the high elastic modulus of such metals, a residual tensile stress of 300 to 400 MPa is measured in evaporated thin films. We present novel results evidencing complete control over both the magnitude and the sign of the residual stress in such refractory thin films. The metallic layers are deposited by means of ion-beam-enhanced physical vapor deposition and both electrical resistivity and stress are controlled. Controlling the stress in this manner has enabled achieving thicker films and films with near-zero residual stress.

Refractory Thin-Film Metallizations with Controlled Stress and Electrical Resistivity

2001 ◽  
Vol 699 ◽  
Author(s):  
Ilan Golecki ◽  
Margaret Eagan
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Electrical Resistivity ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Residual Tensile Stress ◽  
Si Substrates ◽  
Chemical Inertness ◽  
Temperature Deposition ◽  
Beam Parameters

AbstractRhodium and iridium are refractory metals which possess intrinsically high electrical conductivity, and their chemical inertness enables their use at relatively high temperatures in microelectronics. However, due to the high Young's modulus of these materials, a residual tensile stress of hundreds of MPa is measured in evaporated thin films. New data is presented, demonstrating control over both the magnitude and the sign of the residual stress in such refractory thin films formed by means of ion-beam-enhanced physical vapor deposition on oxidized Si substrates. The electrical resistivity and stress are determined by controlling the substrate temperature, deposition rate and ion beam parameters. Thicker films are achieved in this manner, including films with near-zero residual stress.

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

scholarly journals Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
M. R. Khanlary ◽  
E. Salavati
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Optical Band Gap ◽  
Xrd Analysis ◽  
High Energy ◽  
Properties And Characterization ◽  
Different Doses

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2glass is described. Interaction of high-energy Ar+ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.

scholarly journals Properties of Bare and Thin-Film-Covered GaN(0001) Surfaces

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 145
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapor Deposition ◽  
Direct Contact ◽  
Physical Vapor Deposition ◽  
Metal Films ◽  
Surface Alloying ◽  
X Ray ◽  
Physical Vapor Deposition Method

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) in wurtzite form, (0001) oriented, are summarized. Thin films of several elements—manganese, nickel, palladium, arsenic, and antimony—were formed by the physical vapor deposition method. The results of the bare surfaces, as well as the thin film/GaN(0001) phase boundaries presented, were characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information on the electronic properties of GaN(0001) surfaces are shown. Different behaviors of the thin films, after postdeposition annealing in ultrahigh vacuum conditions such as surface alloying and subsurface dissolving and desorbing, were found. The metal films formed surface alloys with gallium (MnGa, NiGa, PdGa), while the semimetal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate could react with it, modifying the surface properties of GaN(0001).

Spiral growth mode in DMDPC organic thin film transistors by physical vapor deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (56) ◽  
pp. 50770-50775 ◽  
Author(s):  
Tianjun Liu ◽  
Jiawei Wang ◽  
Liang Wang ◽  
Jing Wang ◽  
Jingbo Lan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Physical Vapor Deposition ◽  
Organic Thin Films ◽  
Organic Thin Film Transistors ◽  
Spiral Growth ◽  
Organic Thin Film ◽  
Screw Dislocations

We report the observation of a screw-dislocation-driven spiral growth of DMDPC organic thin films. The existence of screw dislocations was clearly confirmed by the observations of outcropped stepsand spiral fringes.

High Quality AlN Thin Films Deposited by Middle-Frequency Magnetron Sputtering at Room Temperature

2014 ◽  
Vol 787 ◽  
pp. 227-231 ◽  
Author(s):  
Chuan Li ◽  
Lin Shu ◽  
Li Jun He ◽  
Xing Zhao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Room Temperature ◽  
Residual Tensile Stress ◽  
High Quality ◽  
Polycrystalline Aluminum ◽  
Aln Buffer

A study of depositing high quality c-axis oriented polycrystalline aluminum nitride thin film at room temperature was presented. Aluminum nitride films were grown by mid-frequency (MF) reactive sputtering. Metallic aluminum target was used to deposit AlN films in Ar/N2 gas mixture. A 50nm thick of N-rich AlN buffer layer was deposited at the initial stage of sputtering process to improve the film quality. The composition, preferred orientation and residual stress of the films were analyzed by EDS, XRD and Raman microscope, respectively. The results showed that the N-rich AlN buffer layer improved the textured degree and reduced the residual stress significantly of the AlN thin films. The near stoichiometric AlN thin film with highly textured degree was obtained. The FWHM value of the rocking curve for (0002) diffraction peak was about 1.6°, and the residual tensile stress was about 500MPa. The piezoelectric d33 coefficient increased with the decreasing of FWHM value, and the highest d33 coefficient of 3.6 pF/C was obtained.

Microstructure Evolution of NiTi Magnetron Sputtered Thin Film on Different Substrates

2020 ◽  
Vol 835 ◽  
pp. 68-74
Author(s):  
Hanan A. Abd El-Fattah ◽  
Iman El-Mahallawi ◽  
Mostafa H. Shazly ◽  
Waleed A. Khalifa
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stainless Steel ◽  
Microstructure Evolution ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Steel Substrate ◽  
Chemical Vapor ◽  
Optical Absorbance ◽  
Cu Substrates

Understanding the microstructure evolution of metal thin films on various substrates is essential for developing thin films that need specific requirements. The microstructure of thin films has been identified to be related to the mobility of the adatoms during growth. Recently, the theory of non-classical crystallisation of thin films has been introduced to explain the structure formation in chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. Much work has been conducted on CVD deposited thin films, while little data appears on PVD techniques. The effect of substrate material on the microstructure of the deposited nickel-titanium (NiTi) thin film and its optical absorbance is studied in this work. Three different substrates with identified surface conditions were used to deposit thin films of NiTi in the same chamber under the same processing conditions. The NiTi thin film was deposited using radio frequency (RF) PVD sputtering process on stainless steel (SS), aluminium (Al) and copper (Cu) substrates. The results were analysed in view of state of art structure models and mechanisms. The microstructure was studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The optical absorbance was measured by spectrophotometery. The results have shown that the structure and morphology of the grown films have varied in all conditions. Amorphous structures were obtained for Al and Cu substrates, while crystalline structures were obtained for the stainless-steel substrate at the same sputtering conditions.

scholarly journals Synthesis and Characterizations of ZnO Thin Films Grown by Physical Vapor Deposition Technique

2020 ◽  
Vol 1 (4) ◽  
pp. 135-139
Author(s):  
Raghad Mohammed ◽  
Sabah Ahmed ◽  
Ahmed Abdulrahman ◽  
Samir Hamad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
High Purity ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Glass Slide ◽  
Zno Thin Films ◽  
Chemical Compositions ◽  
Zno Thin Film

In the current study, Zinc oxide (ZnO) thin films have been synthesized over the whole the glass-slide substrate by utilizing the physical vapor deposition (PVD) technique. The Zinc (Zn) seed layer was deposited by heating the high purity Zn powder by using a molybdenum (Mo) boat at 37.503×10-3 Torr vacuum pressure of the PVD chamber. The ZnO thin films were fabricated by oxidation of the Zn seed layer coated glass-slide substrate at 400 °C. The morphological, chemical compositions, crystal quality, structural and optical properties of fabricated ZnO thin film were characterized and studied utilizing several characterization techniques. The results found that the high distribution density, homogenous, uniform, and high-quality ZnO thin film was grown over the entire substrate. The synthesized ZnO thin film with a thickness of 130 nm was grown with high purity and polycrystalline hexagonal-Wurtzite phase of ZnO. The sharp, and dominant diffraction peak was observed at peak position 34.3375 along (002) plane and c-axis. The investigated crystal size, dislocation density, and interplanar spacing were about 13.33 nm, 5.63×10-5 A°, and 2.609 A°, respectively. Also, UV-visible spectroscopy results show the high transmittance and low absorbance in the visible (Vis.) region and were about 90%, and the transmittance decreases sharply near the UV region at a wavelength around 383 nm. Besides, obtained the energy band-gap (Eg) was about 3.24 eV.

scholarly journals Morphological characterization and porosity profiles of tantalum glancing-angle-deposited thin films

2020 ◽  
Vol 9 (1) ◽  
pp. 79-87
Author(s):  
Tobias Ott ◽  
Gerald Gerlach
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Physical Vapor Deposition ◽  
Effective Medium Theory ◽  
Layer Structure ◽  
Ion Beam ◽  
Periodic Pattern ◽  
Sem Images ◽  
Glancing Angle

Abstract. Glancing angle deposition (GLAD) is a physical vapor deposition (PVD) process using a substrate that rotates tilted at an angle to the evaporation source. Depending on the deposition conditions, it provides the controlled formation of regular nanostructures during the PVD process. As a result, a wide variety of shapes, such as spirals or vertical columns, can be easily fabricated in the nanometer range. For this reason, GLAD has already been proven reliable in the production of optical coatings with very low reflectance in a broad spectral range. This paper examines the morphology of tantalum nanostructures deposited on planar silicon substrates by electron beam evaporation. The prepared samples are characterized by scanning electron microscope (SEM) images at a breaking edge with respect to the layer structure and by focused ion beam (FIB) SEM images of the cross-sectional areas with respect to the porosity. The porosity can be used to model the optical properties of the thin film with the effective medium theory (EMT). Our work studies the relationship between the evaporation parameters (growth pitch and deposition angle) and thin film morphology of tantalum so that in future work the optical properties can be linked to the deposition parameters, which in turn can be chosen to achieve highly absorbent infrared radiation layers, e.g., for infrared sensors. It was shown that the porosity across the film thickness of both columnar and screw-like thin films is nearly constant, whereas the porosity profiles of spiral structures show a periodic pattern, the period of which seems to depend on the growth pitch.

scholarly journals Physical Vapor Deposition of Cathode Materials for All Solid-State Li Ion Batteries: A Review

2021 ◽  
Vol 9 ◽  
Author(s):  
Berik Uzakbaiuly ◽  
Aliya Mukanova ◽  
Yongguang Zhang ◽  
Zhumabay Bakenov
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Vapor Deposition ◽  
Cathode Materials ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Layer By Layer ◽  
Thin Film Batteries ◽  
Wide Range ◽  
Binder Free

With the development of smart electronics, a wide range of techniques have been considered for efficient co-integration of micro devices and micro energy sources. Physical vapor deposition (PVD) by means of thermal evaporation, magnetron sputtering, ion-beam deposition, pulsed laser deposition, etc., is among the most promising techniques for such purposes. Layer-by-layer deposition of all solid-state thin-film batteries via PVD has led to many publications in the last two decades. In these batteries, active materials are homogeneous and usually binder free, which makes them more promising in terms of energy density than those prepared by the traditional powder slurry technique. This review provides a summary of the preparation of cathode materials by PVD for all solid-state thin-film batteries. Cathodes based on intercalation and conversion reaction, as well as properties of thin-film electrode–electrolyte interface, are discussed.

Sign in / Sign up

Export Citation Format

Share Document