Combinatorial Synthesis Approach for Optimizing Oxide/Si Interfaces for the Future Ulsi

2001 ◽  
Vol 700 ◽  
Author(s):  
T. Chikyow ◽  
P. Ahmet ◽  
T. Naruke ◽  
K. Nakajima ◽  
N. Okazaki ◽  
...  
Keyword(s):  
Dielectric Property ◽  
Growth Parameters ◽  
Heating System ◽  
High Resolution Electron Microscopy ◽  
Material Synthesis ◽  
Amorphous Oxide ◽  
Intermediate Layers ◽  
Resolution Electron ◽  
Abrupt Interface ◽  
Interface Structures

AbstractA combinatorial material synthesis with temperature gradient heating system was employed to optimizing growth parameters for oxide growth on Si substrate. From the obtained results, it was found the dielectric property depends on the growth temperature as well as the composition. The interface structures were investigated by high resolution electron microscopy with a series of specimens fabricated by micro sampling method. The results showed that amorphous oxide region and SiO2 layer were formed at the interface. It was speculated that the amorphous oxide region contributed to the reduction of the dielectric property. To avoid the amorphous and SiO2 formation at the oxide/Si interface, a few kinds of intermediate layers were inserted and tested to find the possibility of abrupt interface formation.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

A method for direct measurement of specimen noise in HREM images

1993 ◽  
Vol 51 ◽  
pp. 458-459
Author(s):  
Sidnei Paciornik ◽  
Roar Kilaas ◽  
Ulrich Dahmen ◽  
Michael Adrian O'Keefe
Keyword(s):  
Random Noise ◽  
Image Interpretation ◽  
Thin Foil ◽  
High Resolution Electron Microscopy ◽  
Black Dot ◽  
Atomic Column ◽  
Amorphous Oxide ◽  
Resolution Electron ◽  
Imaging Conditions ◽  
Image Simulations

High resolution electron microscopy (HREM) is a primary tool for studying the atomic structure of defects in crystals. However, the quantitative analysis of defect structures is often seriously limited by specimen noise due to contamination or oxide layers on the surfaces of a thin foil.For simple monatomic structures such as fcc or bcc metals observed in directions where the crystal projects into well-separated atomic columns, HREM image interpretation is relatively simple: under weak phase object, Scherzer imaging conditions, each atomic column is imaged as a black dot. Variations in intensity and position of individual image dots can be due to variations in composition or location of atomic columns. Unfortunately, both types of variation may also arise from random noise superimposed on the periodic image due to an amorphous oxide or contamination film on the surfaces of the thin foil. For example, image simulations have shown that a layer of amorphous oxide (random noise) on the surfaces of a thin foil of perfect crystalline Si can lead to significant shifts in image intensities and centroid positions for individual atomic columns.

Crystallography of YBa2Cu3O6+x thin film-substrate interfaces

1989 ◽  
Vol 4 (5) ◽  
pp. 1072-1081 ◽  
Author(s):  
Lisa A. Tietz ◽  
C. Barry Carter ◽  
Daniel K. Lathrop ◽  
Stephen E. Russek ◽  
Robert A. Buhrman ◽  
...  
Keyword(s):  
High Resolution Electron Microscopy ◽  
Electron Beam Evaporation ◽  
Barium Zirconate ◽  
Orientation Relationships ◽  
Cross Sectional ◽  
Ceramic Substrates ◽  
Intermediate Layers ◽  
Oxygen Sublattices ◽  
Resolution Electron ◽  
Film Substrate

The epitactic nature of the growth of YBa2Cu3O6+x (YBCO) superconducting thin films on ceramic substrates has been studied using high-resolution electron microscopy (HREM) and selected-area diffraction (SAD) of cross-sectional specimens. The films were grown in situ on (001)-oriented MgO and (001)-oriented Y2O3-stabilized cubic ZrO2 (YSZ) single-crystal substrates by electron beam evaporation. Both of these materials have large lattice misfits with respect to YBCO. Different orientation relationships were observed for films grown on the two types of substrates. These orientation relationships are shown to provide the best matching of the oxygen sublattices across the substrate-film interfaces. A crystalline intermediate layer, 6 nm thick, between the YBCO film and YSZ substrate was observed by HREM and shown by EDS to be a Ba-enriched phase, possibly barium zirconate formed by a reaction. In contrast, the YBCO–MgO interface was found to be sharp and free of any intermediate layers.

The Observation Of Mg)-Al Interface By Hrem and Microdiffraction

1985 ◽  
Vol 43 ◽  
pp. 240-241
Author(s):  
S.Y. Zhang ◽  
J.M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Materials Science ◽  
Incident Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Resolution Electron ◽  
Powerful Means ◽  
Interface Structures

The combination of high resolution electron microscopy (HREM) and nanodiffraction techniques provided a powerful means for characterizing many of the interface structures which are of fundamental importance in materials science. In this work the interface structure between magnesium oxide and aluminum has been examined by HREM (with JEM-200CX) and nanodiffraction (with HB-5). The interfaces were formed by evaporating Al on freshly prepared cubic MgO smoke crystals under various vacuum conditions, at 10 -4, 10-5 10-6 and 10-7 torr. The Al layers on the MgO (001) surface are about 100Å thick. TEM observations were performed with the incident beam along the MgO [100] direction so that the interface could be revealed clearly. The nanodiffraction patterns were obtained with the electron beam of 15Å diameter parallel to the interface.

Characterization of interface structures in nanocrystalline germanium by means of high-resolution electron microscopy and molecular dynamics simulations

1996 ◽  
Vol 211 (3) ◽  
Author(s):  
W. Neumann ◽  
H. Hofmeister ◽  
D. Conrad ◽  
K. Scheerschmidt ◽  
S. Ruvimov
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Vapor Deposition ◽  
High Resolution Electron Microscopy ◽  
Amorphous Thin Films ◽  
Resolution Electron ◽  
Nanocrystalline Particles ◽  
Dynamics Simulations ◽  
Interface Structures

AbstractThe atomic structure of nanocrystalline particles formed by vapor deposition and subsequent annealing of amorphous thin films of germanium was studied by high resolution electron microscopy (HREM). The HREM images revealed a strongly varied multiply twinned structure. In some regions of adjacent twins contrast features were detected which were caused by an overlapping of twin lamellae. It will be shown by HREM contrast simulations that these interface types can be described by Σ = 3

Hrtem of the Cu/Mno Interface in an Internally Oxidized Cumn Alloy

1990 ◽  
Vol 183 ◽  
Author(s):  
F. Ernst
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Particle Morphology ◽  
High Resolution Electron Microscopy ◽  
Orientation Relationships ◽  
Coherent Interface ◽  
Resolution Electron ◽  
Characteristic Particle ◽  
Interface Structures ◽  
The Relationship

AbstractThe structure of the Cu/MnO interface has been studied using high resolution electron microscopy (HRTEM). Interfaces were formed by internal oxidation of a CuMn alloy. In the course of the reaction, MnO particles precipitate in several special orientations relative to the Cu lattice: “parallel” topotaxy, “twin” topotaxy, and a 55°[110] rotation yielding (111)Cu∥(002)MnO. Each of the three Cu/MnO orientation relationships has a characteristic particle morphology reflecting thermodynamically favourable interface structures. In parallel topotaxy MnO particles preferentially form flat {111}Cu/{111} MnO interfaces with a lattice mismatch of 21%. Although this mismatch is large, the existence of coherence strains in the Cu cannot be excluded. MnO particles in the 55°[110] orientation form regions of semi-coherent Interface where {200}MnO planes face a set of parallel {111} Cu planes with a mismatch of only 6%. This interface variant exhibits equally spaced steps, every 16 to 18 Cu {111} planes. Parallel to every step there is a misfit dislocation in the Cu at a stand-off distance of about 2 Cu {111} spacings. The relationship between structure and energy of the Cu/MnO interface is discussed.

Analysis of High Resolution Electron Microscope Images of the Pd2Si-Si Interface

1981 ◽  
Vol 10 ◽  
Author(s):  
W. Krakow
Keyword(s):  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Dynamical Theory ◽  
Image Features ◽  
Interface Roughness ◽  
Interface Plane ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Interface Structures ◽  
Image Detail

High resolution electron micrographs have been obtained from Pd2 Si-Si(111) interfaces viewed edge on and a detailed analysis of the interface structure has been carried out using computer simulations of the images. Since the stacking sequence of hexagonal Pd2Si is AαAαAα..., the question whether the interface plane of Pd2 Si is silicon rich, A, or silicon deficient, α, has been investigated. An advancing interface cannot be planar at all stages of growth; therefore the question of interface roughness along the direction of the electron beam and twinning orientations has been considered. This has been modeled by Fourier shift techniques incorporated into multislice dynamical theory and, of course, is complicated by the dynamical diffraction conditions of the structure and the contributions of high order Bragg reflections to image detail. It has been possible to access the image features present in Pd2 Si/Si micrographs and to point out the difficulties which are encountered not only in this system but in a wide variety of interface structures by high resolution electron microscopy. Perhaps the most important finding of this study is that the interface region contains a mixture of silicon-rich and silicon-deficient Pd2Si planes adjacent to the silicon side of the interface.

Crystallography and Interfaces of Epitaxial Fluorite Metals and Insulators on Semiconductors

1983 ◽  
Vol 25 ◽  
Author(s):  
J.M. Gibson ◽  
R.T. Tung ◽  
J.M. Phillips ◽  
J.M. Poate
Keyword(s):  
Thin Films ◽  
Silicon Germanium ◽  
Thermal Processing ◽  
Growth Parameters ◽  
Laser Pulses ◽  
High Resolution Electron Microscopy ◽  
Fluorite Structure ◽  
Resolution Electron ◽  
Small Lattice ◽  
Transient Thermal

ABSTRACTCrystals with the cubic fluorite structure and small lattice mismatches can be grown epitaxially on cubic semiconductors. In this manner thin-film single-crystal metals (NiSi2 and CoSi2) and insulators (e.g. CaF2 , BaF2) have been grown on silicon, germanium and indium phosphide. With close attention to deposition and growth parameters, afforded either by atomically clean conditions or transient thermal processing, great control can be exerted over the crystallography and interfaces of these systems. This has resulted in films with unique physical properties and exceptionally high quality and reproducibility. We review the microstructure of these films in this paper and identify two important new growth regimes for these materials: very thin films (less than 30Å) and transient thermal processing with ultra-fast laser pulses. Examination of the structure of these films, using high-resolution electron microscopy, provides insight into these nucleation and growth processes. One intriguing observation is that all these fluorite structure thin films have an overwhelming tendency to grow with a 180° rotated orientation (B) on (111) semiconductors.

High-Resolution Transmission Electron Microscopy Study of WC-Co Alloy doped with other Metal Carbides; VC, Cr3C2, and ZrC

2007 ◽  
Vol 558-559 ◽  
pp. 993-996 ◽  
Author(s):  
Y. Yamanaka ◽  
T. Taniuchi ◽  
F. Shirase ◽  
T. Tanase ◽  
Yuichi Ikuhara ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Metal Carbides ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures ◽  
Co Alloys

The WC/Co interface structures in WC-Co alloys doped with VC, Cr3C2 or ZrC were examined by high-resolution electron microscopy (HRTEM) and X-ray energy dispersive spectroscopy (EDS) with a special interest in the segregation behavior of respective dopants at the WC/Co interfaces. It was confirmed that the addition of VC or Cr3C2 were effective to reduce WC grain size while that of ZrC was not. In case of VC or Cr3C2-doped alloys, the morphology of WC grains largely changed comparing with undoped and ZrC-doped alloys. The WC/Co interfaces of the two alloys tend to form micro facets with (0001) and {1010} habits. EDS analysis with a sub-nano scale probe revealed that the dopants strongly segregated at the two habits. In contrast, such morphology change, and also dopant segregation, could not be observed in ZrC-doped alloy. In our study, doped ZrC was not found to solute in Co-phase. Doped ZrC distributed in Co-phase to form other grains mainly consisting of ZrC. The interface structures of WC/Co could be considered to be closely related to the inhibition effect to WC grain growth.

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