X-Ray Reflectivity Study Of Exotic Materials For Electronic Applications

2002 ◽  
Vol 716 ◽  
Author(s):  
C.H. Russell
Keyword(s):  
Structural Parameters ◽  
Dielectric Materials ◽  
Silicon Oxynitride ◽  
Interface Roughness ◽  
Porous Films ◽  
X Ray ◽  
Robust Fitting ◽  
High K ◽  
High K Dielectric ◽  
Low K

AbstractAs device size continues to decrease, new challenges arise regarding shrinking dimensions, creating the need for thin, high-k dielectric materials, low-k dielectrics and other exotic materials. These new materials in turn create characterization issues, which cannot be resolved with traditional metrology tools. Critical structural parameters such as thickness, density, and interface roughness of a layer can be measured and monitored with X-ray reflectivity. A quick and reliable method of study regarding these materials is to base work on simulations using a very robust fitting program. This work incorporates a largely theoretical study of exotic materials of interest, including silicon oxynitride (SiOxNy), low-k (porous films) and high-k dielectrics (Ta2O5, HfO2), with a few selected experimental results.

Study of Oxides Formed in HfO2/Si Structure for High-k Dielectric Applications

2012 ◽  
Vol 186 ◽  
pp. 78-81
Author(s):  
Adam Łaszcz ◽  
Andrzej Czerwiński ◽  
Jacek Ratajczak ◽  
Andrzej Taube ◽  
Sylwia Gierałtowska ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Amorphous Layer ◽  
Dielectric Materials ◽  
Annealed Sample ◽  
Interface Roughness ◽  
Si Substrate ◽  
Transmission Electron ◽  
High K ◽  
High K Dielectric

Transmission electron microscopy (TEM) techniques were used for characterization of annealing (400, 600 and 800 °C) influence on the structural properties of the HfO2 film (45 nm thick) deposited on Si substrate. Such structures are considered as high-k dielectric materials for application in novel semiconductor devices. The studies showed that independently of the annealing temperature a very thin and flat amorphous layer is formed between HfO2 layer and Si substrate. This result was also found in the non-annealed sample. EDXS examination confirmed that the stoichiometry for the hafnium oxide layer in each sample corresponds to 1:2 for Hf:O (i.e. to HfO2). TEM images revealed differences in the microstructure of HfO2 layers in annealed samples, however the layers have similar thickness and interface roughness in all studied samples.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

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