GaSb-based Nanocomposites as IR-Emitters

2002 ◽  
Vol 737 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Stephan Schulz
Keyword(s):  
Communication Systems ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Strongly Nonlinear ◽  
Current Voltage ◽  
Optical Communication Systems ◽  
Capacitance Voltage ◽  
Nonlinear Character ◽  
Current Voltage Characteristics

ABSTRACTNanocomposites consisting of GaSb nanocrystals in a conducting polymer matrix were fabricated and investigated. The current-voltage characteristics of the nanocomposite-based diode structures have a symmetric but strongly nonlinear character. Capacitance-voltage characteristics of the structures were investigated both in the dark and under illumination and compared with those of a pure polymer. At applied voltages exceeding 7–10 V (for different samples) electroluminescence begins and steeply increases. The position of the maximum of the measured electroluminescence spectra can be made to vary in the 1.3 – 1.6 μm wavelengths region by changing nanocrystal size. Photoluminescence spectra have a maximum nearly coinciding with that of electroluminescence but of considerably larger width. The results demonstrate the promise of GaSb-based nanocomposites for infrared light-emitting devices operating in the 1.3–1.6 μm spectral region used in optical communication systems.

Current-Voltage Characteristics of Single Layer Polymer Light Emitting Diodes Under High Intensity Electrical Excitation

1999 ◽  
Vol 561 ◽  
Author(s):  
B. Ruhstaller ◽  
J.C. Scott ◽  
P.J. Brock ◽  
S.A. Carter
Keyword(s):  
Electric Fields ◽  
High Intensity ◽  
Single Layer ◽  
Electrical Excitation ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Single Carrier ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Polymer Light Emitting Devices

ABSTRACTWe study the current-voltage characteristics of both double and single carrier polymer light emitting devices in the high intensity electrical excitation regime. Single layer devices are investigated with the orange-emitting MEH-PPV as the active polymer. Performing very low duty (≈0.001 %) pulsed electroluminescence measurements with electric fields up to 1*109 V/m, we observe for the hole-dominated devices a space charge limited current with a saturating mobility and a saturating external quantum efficiency of 1%. For double carrier devices, the current starts to saturate in the high-field regime, appoaching Ohmic-like behavior. We report current densities of 100 A/cm2and brightnesses of 7*105 cd/m2. The spectral features are monitored below the onset of degradation.

Tetraphenylmethane-Based 1,3,4-Oxadiazole as Electron Transporting Materials in Organic Light-Emitting Devices

1999 ◽  
Vol 598 ◽  
Author(s):  
Chin-Ti Chen ◽  
Tzu-Yao J. Lin ◽  
Hsiu-Chih Yeh ◽  
Li-Hsin Jan ◽  
Easwaramoorthy Balasubramaniam ◽  
...  
Keyword(s):  
Glass Phase ◽  
Molecular Design ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Current Voltage ◽  
Electron Transporting Layer ◽  
Current Voltage Characteristics

ABSTRACTA series of tetrahedral tetramers of 2,5-diphenyl substituted 1,3,4-oxadiazole compounds were synthesized and characterized for electron-transporting layer (ETL) in organic light-emitting diode (OLED). The multiple-branch design of the oxadiazole tetramers intends to increase the melting temperature and to generate glass phase of the low molar mass derivative such as 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD). We observed temperatures of the glass phase transition for the oxadiazole tetramer with appropriate peripheral substituents, indicative of amorphous characteristics of the molecule in spite of highly symmetrical molecular framework. The luminescence-current-voltage characteristics of multilayer OLED devices containing the oxadiazole tetramer or PBD as ETL were examined to evaluate the efficiency of our multiple-branch molecular design.

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

2004 ◽  
Vol 829 ◽  
Author(s):  
M. A. Awaah ◽  
R. Nana ◽  
K. Das
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Electrical Measurement ◽  
High Concentration ◽  
Recombination Lifetime ◽  
Light Emitting ◽  
Radiative Processes ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

Effect of deep-level states on current-voltage characteristics and electroluminescence of blue and UV light-emitting diodes

2010 ◽  
Vol 207 (6) ◽  
pp. 1489-1496 ◽  
Author(s):  
R. Nana ◽  
P. Gnanachchelvi ◽  
M. A. Awaah ◽  
M. H. Gowda ◽  
A. M. Kamto ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Deep Level ◽  
Uv Light ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Светоизлучающие полевые транзисторы на основе композитных пленок полифлуорена и нанокристаллов CsPbBr-=SUB=-3-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 388
Author(s):  
А.Н. Алешин ◽  
И.П. Щербаков ◽  
Д.А. Кириленко ◽  
Л.Б. Матюшкин ◽  
В.А. Мошников
Keyword(s):  
Field Effect Transistors ◽  
Composite Films ◽  
Hole Mobility ◽  
Hole Transport ◽  
Component Ratio ◽  
Organic Field Effect Transistors ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract—Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr_3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr_3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm^2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm^2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr_3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (22) ◽  
pp. 11784-11807 ◽  
Author(s):  
Changyong Lan ◽  
Zhe Shi ◽  
Rui Cao ◽  
Chun Li ◽  
Han Zhang
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Infrared Light ◽  
Optical Modulators ◽  
Light Emitting ◽  
Light Emitting Devices

A study of typical 2D materials beyond graphene suitable for infrared applications, in particular, infrared light emitting devices, optical modulators, and photodetectors.

Cathode effect on current-voltage characteristics of blue light-emitting diodes based on a polyspirofluorene

2008 ◽  
Author(s):  
G. Garcia-Belmonte ◽  
E. M. Barea ◽  
Y. Ayyad-Limonge ◽  
J. M. Montero ◽  
H. J. Bolink ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics
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