Electrical Properties of Thin Nitrogen-Doped Ultrananocrystalline Diamond Films

2002 ◽  
Vol 737 ◽  
Author(s):  
V.I. Polyakov ◽  
A.I. Rukovishnikov ◽  
S.M. Pimenov ◽  
J.A. Carlisle ◽  
D.M. Gruen
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Microwave Plasma ◽  
Deep Level ◽  
Nitrogen Concentration ◽  
Si Substrates ◽  
Ultrananocrystalline Diamond ◽  
Microwave Plasma Cvd ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of ultrananocrystalline diamond (UNCD) films of approximately 1μm thickness were studied. UNCD films were deposited on p-type Si substrates from CH4/Ar/N2 gas mixtures using microwave plasma CVD techniques. It was found that the UNCD films with higher nitrogen concentration and higher electron conductivity have substantially higher concentration of shallow levels with activation energy of about 0.05 eV. The change of concentration, activation energy and capture cross-section of nitrogen-induced levels for UNCD films synthesized using different nitrogen concentration in the plasma was studied by charge– based deep level transient spectroscopy.

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

Electrically Active Deep Levels in ScN

2001 ◽  
Vol 699 ◽  
Author(s):  
Florentina Perjeru ◽  
Xuewen Bai ◽  
Martin E. Kordesch
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Physical Vapor Deposition ◽  
Deep Level ◽  
Reactive Sputtering ◽  
Deep Levels ◽  
Si Substrates ◽  
Transient Spectroscopy

AbstractWe report the electronic characterization of n-ScN in ScN-Si heterojunctions using Deep Level Transient Spectroscopy of electrically active deep levels. ScN material was grown by plasma assisted physical vapor deposition and by reactive sputtering on commercial p+ Si substrates. Deep level transient spectroscopy of the junction grown by plasma assisted physical vapor deposition shows the presence of an electronic trap with activation energy EC-ET= 0.51 eV. The trap has a higher concentration (1.2–1.6 1013cm−3) closer to the ScN/Si interface. Junctions grown by sputtering also have an electronic trap, situated at about EC-ET= 0.90 eV.

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Electrical Properties of Mesa Diodes on Epitaxial GaAs/Si

1989 ◽  
Vol 160 ◽  
Author(s):  
K.L. Jiao ◽  
A.J. Soltyka ◽  
W.A. Anderson ◽  
S.M. Vernon
Keyword(s):  
Electrical Properties ◽  
Deep Level ◽  
Continuous Distribution ◽  
Saturation Current ◽  
Tunneling Model ◽  
Si Substrates ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Transient Spectroscopy ◽  
Density Barrier

AbstractDeep level transient spectroscopy (DLTS), current-voltage- temperature (I-V-T), capacitance-voltage-temperature (C-V-T), C-T and photoreflectance spectroscopy (PRS) were used to compare the electrical properties of GaAs p-n junctions epitaxially grown by MOCVD on GaAs and Si substrates. EL2 was detected for both GaAs/GaAs and GaAs/Si structures. For GaAs/Si, a continuous distribution of trap levels was also observed which could be ascribed to misfit defects. I-V-T data revealed the saturation current of GaAs/Si diodes to be four orders in amplitude higher than for GaAs/GaAs ones. Different temperature dependences were found in saturation current density, barrier height and capacitance between the two structures. A multistep tunneling model is utilized in explaining the results for GaAs/Si. C-T measurements indicated the free carriers not to be frozen-out for GaAs/Si at the freeze-out temperature of GaAs/GaAs. A defect- induced bandgap tailing effect might be responsible for this effect, verified by PRS tests.

A Mg acceptor level in Si

1991 ◽  
Vol 69 (3-4) ◽  
pp. 192-194
Author(s):  
I. Shih ◽  
S. L. Wu ◽  
L. Li ◽  
C. X. Qiu ◽  
P. Grant ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Buffer Layers ◽  
Acceptor Level ◽  
Valence Band Edge ◽  
Si Substrates ◽  
Transient Spectroscopy ◽  
Hybrid Devices ◽  
P Type

Thin films of MgO were deposited on p-type monocrystalline Si substrates as buffer layers for high-Tc superconductor/Si hybrid devices. After heat treatment at temperatures in the range from 700 to 1100 °C, the MgO films were removed and Ag/p-Si Schottky junctions formed. Deep-level transient spectroscopy measurements were made on the treated junctions. The sample treated at 1000 °C showed a single acceptor level located at 240 meV from the valence band edge.

Study of Electrical Properties of Defects in Soi Films by Wafer Bonding

1992 ◽  
Vol 262 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Shun-ichiro Ishigami ◽  
Yutaka Tokuda ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Wafer Bonding ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Silicon On Insulator ◽  
The Other ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Bonding Technique

ABSTRACTSilicon-on-insulator films fabricated by the wafer bonding technique were studied with capacitance-voltage (c-V) and deep-level transient spectroscopy (DLTS) measurements. For our experiments, two kinds of SOI wafers were prepared. Many voids were present in one sample (void sample), but few voids were in the other sample (no void sample). Before annealing, two DLTS peaks (E-0.48 eV and Ec-0.38 eV) were observed in the SOI layer of the void sample. For the no void sample, different two DLTS peaks (Ec-0.16 eV and Ec-0.12 eV) were observed. The trap with an activation energy of 0.48 eV was annealed out after 450 °C annealing for 24 h. On the other hand, other traps were annealed out after 450 °C annealing for several hours. During annealing at 450 °C, thermal donors (TDs) were formed simultaneously. In usual CZ sil icon, a DLTS peak of TD was observed around 60 K. In the no void sample, however, a TD peak was observed at a temperature lower than 30 K. This TD was annihilated by rapid thermal annealing. This suggests that the TD with a shallower level was formed in the no void sample after annealing at 450 °C.

Degradation and Recovery of Boron Doped Strained Silicon Germanium Layers After 1-MeV Electron Irradiation

1992 ◽  
Vol 281 ◽  
Author(s):  
H. Ohyama ◽  
J. Vanhellemont ◽  
M.-A. Trauwaert ◽  
J. Poortmans ◽  
M. Caymax ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Silicon Germanium ◽  
Deep Level ◽  
Recovery Process ◽  
Si Substrates ◽  
Boron Doped ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACT1007×100 μm2 n+− Si/p-Si1−x Gex diodes fabricated on conventional p-type Si substrates are irradiated at room temperature with 1-MeV electrons with fluences from 1.0×1014 to 1.0×1015 e/cm2 in a high voltage transmission electron microscope. The boron concentration and germanium fraction of the Si1−x Gex epitaxial layer used for the diodes in this study are 5×1017 cm−3 and x = 0.12, respectively. The degradation of diodes is investigated by means of current/voltage and capacitance/voltage measurements. The characteristics of the electrically active defects induced in the Si1−x Gex epitaxial layer by irradiation are also examined by using deep level transient spectroscopy and capacitance/temperature measurements. The degradation of the diode performance and the presence of deep levels are investigated as a function of electron fluence. In order to examine the recovery process, an isochronal thermal anneal is performed in the temperature range between 100 and 400°C.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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