GaN Three Dimensional Nanostructures

1995 ◽  
Vol 395 ◽  
Author(s):  
V. Dmitriev ◽  
K. Irvine ◽  
A. Zubrilov ◽  
D. Tsvetkov ◽  
V. Nikolaev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Blue Shift ◽  
High Energy ◽  
Peak Position ◽  
Organic Chemical ◽  
Nanoscale Structures ◽  
Dot Density ◽  
20 Nm

ABSTRACTWe report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from ∼20 nm to more than 2 μm. The average dot density ranged from 107 to 109 cm−2. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

scholarly journals Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

1999 ◽  
Vol 4 (S1) ◽  
pp. 852-857 ◽  
Author(s):  
H. Hirayama ◽  
Y. Aoyagi ◽  
S. Tanaka
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
3 Dimensional ◽  
Step Flow ◽  
Self Assembling ◽  
Metal Organic ◽  
Dot Density ◽  
20 Nm ◽  
Step Flow Growth ◽  
Organic Chemical Vapor Deposition

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010 cm−2 down to 2×109 cm−2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.

Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

1998 ◽  
Vol 537 ◽  
Author(s):  
H. Hirayama ◽  
Y Aoyagi ◽  
S. Tanaka
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
3 Dimensional ◽  
Step Flow ◽  
Self Assembling ◽  
Metal Organic ◽  
Dot Density ◽  
20 Nm ◽  
Step Flow Growth ◽  
Organic Chemical Vapor Deposition

AbstractWe report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AIGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×1010cm-2 down to 2×109 cm-2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al0.38Ga0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.

GaN Quantum Dots in AlxGa1-xN Confined Layer Structures

1996 ◽  
Vol 449 ◽  
Author(s):  
Satoru Tanaka ◽  
Hideki Hirayama ◽  
Sohachi Iwai ◽  
Yoshinobu Aoyagi
Keyword(s):  
Quantum Dots ◽  
Substrate Surface ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Growth Conditions ◽  
Peak Position ◽  
Growth Mode ◽  
Al Content ◽  
Layer Structures

ABSTRACTNanoscale GaN quantum dots were fabricated in AlxGa1-xN confined layer structures via metalorganic chemical vapor deposition (MOCVD), by using a ‘surfactant’ which can modify the GaN growth mode on AlGaN surfaces. A two dimensional growth mode (step-flow-like) of GaN films on AlxGa1-xN (x=0∼0.2) surfaces, that is energetically commenced under the conventional growth conditions, was intentionally changed into a three dimensional mode by adding tetraethyl-silane (TESi) used as a surfactant onto the AlGaN substrate surface prior to the GaN deposition. The surfactant is believed to inhibit the GaN film from wetting the AlGaN surface due to the change in surface free energy. The resulting morphological structures of GaN dots were found to be sensitive to; the doping rate of TESi, the Al content (x) of the AlxGa1-xN layer, and the growth temperature. A very intense photoluminescence (PL) emission was observed from the GaN dots embedded in the AlGaN layers. The quantum size effect in terms of the blue-shift in a PL peak position was verified using the GaN dot samples having different dot sizes.

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi
Keyword(s):  
Quantum Dots ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Organic Chemical ◽  
Self Assembling ◽  
Atomic Force ◽  
Peak Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

scholarly journals Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacitor

2020 ◽  
Vol 13 (1) ◽  
Author(s):  
Jing Ning ◽  
Maoyang Xia ◽  
Dong Wang ◽  
Xin Feng ◽  
Hong Zhou ◽  
...  
Keyword(s):  
Solid State ◽  
High Performance ◽  
Large Scale ◽  
Specific Capacity ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Specific Area ◽  
High Energy ◽  
Scale Production ◽  
Free Standing

Abstract Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures, doping of thin films, and mechanisms for the construction of three-dimensional architectures. Herein, we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid melting-reconstruction chemical vapor deposition. In a carbon-rich atmosphere, high-energy atoms bombard the Ni and Si surface, and reduce the free energy in the thermodynamic equilibrium of solid Ni–Si particles, considerably catalyzing the growth of Ni–Si nanocrystals. By controlling the carbon source content, a Ni3Si2 single crystal with high crystallinity and good homogeneity is stably synthesized. Electrochemical measurements indicate that the nanostructures exhibit an ultrahigh specific capacity of 835.3 C g−1 (1193.28 F g−1) at 1 A g−1; when integrated as an all-solid-state supercapacitor, it provides a remarkable energy density as high as 25.9 Wh kg−1 at 750 W kg−1, which can be attributed to the free-standing Ni3Si2/graphene skeleton providing a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution, thereby accelerating the electron exchange rate. The growth of the high-performance composite nanostructure is simple and controllable, enabling the large-scale production and application of microenergy storage devices.

Microstructural Characterization of GaN Grown on SiC

2019 ◽  
Vol 25 (6) ◽  
pp. 1383-1393
Author(s):  
Sabyasachi Saha ◽  
Deepak Kumar ◽  
Chandan K. Sharma ◽  
Vikash K. Singh ◽  
Samartha Channagiri ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Transmission Electron ◽  
Vapor Deposition Technique ◽  
Metal Organic

AbstractGaN films have been grown on SiC substrates with an AlN nucleation layer by using a metal organic chemical vapor deposition technique. Micro-cracking of the GaN films has been observed in some of the grown samples. In order to investigate the micro-cracking and microstructure, the samples have been studied using various characterization techniques such as optical microscopy, atomic force microscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy (TEM). The surface morphology of the AlN nucleation layer is related to the stress evolution in subsequent overgrown GaN epilayers. It is determined via TEM evidence that, if the AlN nucleation layer has a rough surface morphology, this leads to tensile stresses in the GaN films, which finally results in cracking. Raman spectroscopy results also suggest this, by showing the existence of considerable tensile residual stress in the AlN nucleation layer. Based on these various observations and results, conclusions or propositions relating to the microstructure are presented.

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

2006 ◽  
Vol 955 ◽  
Author(s):  
Eric Anthony DeCuir ◽  
Emil Fred ◽  
Omar Manasreh ◽  
Jinqiao Xie ◽  
Hadis Morkoc ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Bound States ◽  
Energy Levels ◽  
Three Dimensional ◽  
Blue Shift ◽  
Bound State ◽  
Peak Position ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Photovoltaic Mode

ABSTRACTIntersubband transitions in the spectral range of 1.37-2.90 °Cm is observed in molecular beam epitaxy grown Si-doped GaN/AlN multiple quantum wells using a Fourier-transform spectroscopy technique. A blue shift in the peak position of the intersubband transition is observed as the well width is decreased. A sample with a well width in the order of 2.4 nm exhibited the presence of three bound states in the GaN well. The bound state energy levels are calculated using a transfer matrix method. An electrochemical capacitance voltage technique is used to obtain the three dimensional carrier concentrations in these samples which further enable the calculation of the Fermi energy level position. Devices fabricated from these GaN/AlN quantum wells are found to operate in the photovoltaic mode.

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