Amorphous and Microcrystalline Silicon Based Solar Cells and Modules on Textured Zinc Oxide Coated Glass Substrates

2003 ◽  
Vol 762 ◽  
Author(s):  
Bernd Rech ◽  
Joachim Müller ◽  
Tobias Repmann ◽  
Oliver Kluth ◽  
Tobias Roschek ◽  
...  
Keyword(s):  
Solar Cells ◽  
Excitation Frequency ◽  
Chemical Vapour ◽  
Deposition Process ◽  
Large Area ◽  
Process Technology ◽  
Silicon Thin Film ◽  
Solar Cell Performance ◽  
Glass Substrates ◽  
Laser Scribing

AbstractThis paper addresses scientific and technological efforts to develop highly efficient silicon thin film solar modules on glass substrates. We present a comprehensive study of μc-Si:H p-i-n single junction and a-Si:H/μc-Si:H stacked solar cells prepared by plasma-enhanced chemical vapour deposition (PECVD) at 13.56 MHz excitation frequency. In the first step cell development was performed in a small area PECVD reactor showing the relationship between deposition process and resulting solar cell performance. Subsequent up-scaling to a substrate area of 30×30 cm2 confirmed the scalability to large area reactors. Moreover, we developed textured ZnO:Al films by sputtering and post deposition wet chemical etching as front contact TCO-material with excellent light scattering properties. A-Si:H/μc-Si:H tandem cells developed on this textured ZnO yielded stable efficiencies up to 11.2 % for a cell area of 1 cm2. First solar modules were prepared in our recently installed process technology, which includes PECVD, sputtering, texture etching and laser scribing on substrate sizes up to 30x30 cm2. Initial module efficiencies of 10.8 % and 10.1 % were achieved for aperture areas of 64 cm2 and 676 cm2, respectively.

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Fast Deposition of a-Si:H Layers and Solar Cells in a Large-Area (40×40 cm2) VHF-GD Reactor

1999 ◽  
Vol 557 ◽  
Author(s):  
U. Kroll ◽  
D. Fischer ◽  
J. Meier ◽  
L. Sansonnens ◽  
A. Howling ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Spectral Response ◽  
Excitation Frequency ◽  
Deposition Process ◽  
Process Time ◽  
Large Area ◽  
Single Chamber ◽  
Total Process ◽  
A Minor

AbstractLarge-area deposition of hydrogenated amorphous silicon has been investigated in a single-chamber industrial reactor with electrode dimensions of 40×40 cm2 in the plasma excitation frequency range of 60 to 120 MHz. The film thickness uniformity, analyzed by a light interferometry technique and a step profiler, has been compared with 2-dimensional interelectrode voltage measurements and calculations. The frequency of 80 MHz has been found to be a good compromise between the gain in deposition rate and the homogeneity requirements necessary for a-Si:H solar cells. Under these conditions and while using hydrogen dilution high deposition rates of 6-7 Å/s with a film uniformity of ±5% over a usable substrate size of 30×30 cm2 have been obtained.In the same single-chamber deposition system at 80 MHz, 0.4 gtm thick single-junction a-Si:H solar cells with high performance were fabricated in a total process time of 16 minutes applying a continuous deposition process. Spectral response measurements indicate a minor boron contamination of the i-layer. Initial cell efficiencies of 7.1 % could be achieved for such a fast-grown a-Si:H solar cell.

scholarly journals Metallisation and Interconnection of e-Beam Evaporated Polycrystalline Silicon Thin-Film Solar Cells on Glass

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Taekyun Kim ◽  
Peter J. Gress ◽  
Sergey Varlamov
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Transparent Conducting Oxide ◽  
Thin Film Solar Cells ◽  
Metal Contacts ◽  
Large Area ◽  
Polycrystalline Thin Film ◽  
Silicon Thin Film ◽  
Laser Scribing

One inherent advantage of thin-film technology is the possibility of using monolithic integration for series interconnection of individual cells within large-area modules. Polycrystalline silicon thin-film solar cells do not rely on transparent conducting oxide layers as the high sheet conductivity of the emitter and BSF layers enables the lateral flow of current from the film to the metal contacts. This paper presents a new method for the fabrication of e-beam evaporated polycrystalline thin-film photovoltaic minimodules on glass. The method involves electrically isolating minicells, by laser scribing, and then forming an isolation layer on each laser scribe. The main advantage of this metallisation is to have a single aluminium evaporation step for the formation of finger and busbar features, as well as for series interconnection.

Excitation Frequency Effects on Stabilized Efficiency of Large-Area Amorphous Silicon Solar Cells Using Flexible Plastic Film Substrate

2003 ◽  
Vol 42 (Part 2, No. 11A) ◽  
pp. L1312-L1314 ◽  
Author(s):  
Akihiro Takano ◽  
Masayuki Tanda ◽  
Makoto Shimosawa ◽  
Takehito Wada ◽  
Tomoyoshi Kamoshita
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Excitation Frequency ◽  
Silicon Solar Cells ◽  
Plastic Film ◽  
Large Area ◽  
Frequency Effects ◽  
Film Substrate

scholarly journals Economic pulse electrodeposition for flexible CuInSe2 solar cells

2020 ◽  
Vol 9 (3) ◽  
Author(s):  
Sreekanth Mandati ◽  
Prashant Misra ◽  
Divya Boosagulla ◽  
Tata Naransinga Rao ◽  
Bulusu V. Sarada
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Electrode System ◽  
Pulse Electrodeposition ◽  
Small Scale ◽  
Complexing Agents ◽  
Large Area ◽  
Advanced Technique ◽  
Glass Substrates ◽  
Energy Applications

Abstract Electrodeposition is one of the leading non-vacuum techniques for the fabrication of CuInSe2 (CIS)-based solar cells. In the present work, pulse electrodeposition, an advanced technique, is utilized effectively for CIS absorber preparation devoid of any additives/complexing agents. An economic pulse electrodeposition is employed for the deposition of Cu/In stack followed by selenization to fabricate CIS absorbers on flexible and glass substrates. The approach uses a two-electrode system suitable for large area deposition and utilizes the fundamentals of pulse electrodeposition with appropriate optimization of parameters to obtain smooth Cu/In precursors. The selenized CIS absorbers are of 1 µm thick while possessing copper-poor composition (Cu/In ≈ 0.9) and tetragonal chalcopyrite phase. The fabricated devices have exhibited a power conversion efficiency of 5.2%. The technique can be further improved to obtain low-cost CIS solar cells which are suitable for various small-scale energy applications.

Large Area Flexible Amorphous Silicon Position Sensitive Detectors

2000 ◽  
Vol 609 ◽  
Author(s):  
Elvira M.C. Fortunato ◽  
Donatello Brida ◽  
Isabel M.M. Ferreira ◽  
H. M.B. Åguas ◽  
Patrícia Nunes ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Chemical Vapour ◽  
Open Circuit ◽  
Large Area ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Chemical Vapour Deposition Technique ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTLarge area thin film position sensitive detectors based on amorphous silicon technology have been prepared on polyimide substrates using the conventional plasma enhanced chemical vapour deposition technique. The sensors have been characterised by spectral response, illuminated I-V characteristics and position detectability measurements. The obtained one dimensional position sensors with 5 mm wide and 60 mm long present a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a standard deviation of 1×10−2, comparable to those ones produced on glass substrates. The surface of the sensors at each stage of fabrication was investigated by Atomic Force Microscopy.

Effect of Excitation Frequency on the Performance of Amorphous Silicon Alloy Solar Cells

1998 ◽  
Vol 507 ◽  
Author(s):  
J. Yang ◽  
S. Sugiyama ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Excitation Frequency ◽  
Deposition Rates ◽  
Solar Cell Performance ◽  
Single Junction ◽  
Silicon Alloy ◽  
Double Junction ◽  
Junction Structure

ABSTRACTWe have studied amorphous silicon alloy solar cells made by using a modified-very-highfrequency glow discharge at 75 MHz with a deposition rate of ∼6 Å/s. The solar cell performance is compared with those made from conventional glow discharge at 13.56 MHz with lower deposition rates. Cells made at ∼6 Å/s with 75 MHz showed comparable stabilized efficiency to those made at ∼3 Å/s with 13.56 MHz. The best performance, however, was obtained with ∼1 Å/s, including a stabilized 9.3% a-Si alloy single-junction cell employing conventional glow discharge technique. Using 75 MHz, we have achieved 11.1% and 10.0% initial active-area efficiencies for a-Si alloy and a-SiGe alloy n i p cells, respectively. An initial efficiency of 11.0% has also been obtained in a dual bandgap double-junction structure.

Amorphous and nc-Si:H Intrinsic Thin Films for Solar Cells Applications

2010 ◽  
Vol 657 ◽  
pp. 191-207
Author(s):  
Sylvain Halindintwali ◽  
Dirk Knoesen ◽  
Basil A. Julies ◽  
Theo Muller ◽  
Christopher J. Arendse
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Thermal Activation ◽  
Chemical Vapour ◽  
Deposition Process ◽  
Silicon Thin Films ◽  
Chemical Vapour Deposition Technique ◽  
Structural And Electrical Properties ◽  
Uv Visible

This contribution discusses the deposition process and properties of intrinsic silicon thin films processed by the hot wire chemical vapour deposition technique. We review some fundamental characterization techniques that are used to probe into the quality of the material and thus decide its susceptibility to be used as the intrinsic layer in solar cells industry. This paper covers the optical, structural and electrical properties of the material. Results from UV-visible and IR spectroscopy, XRD and Raman scattering, X-section TEM as well as dark and photo-currents are given. It is shown that the thermal activation energy is a good measure of the quality of the sample.

scholarly journals Removal Mechanism and Defect Characterization for Glass-Side Laser Scribing of CdTe/CdS Multilayer in Solar Cells

2015 ◽  
Vol 137 (6) ◽  
Author(s):  
Hongliang Wang ◽  
Y. Lawrence Yao ◽  
Hongqiang Chen
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Large Scale ◽  
Numerical Models ◽  
Removal Mechanism ◽  
Large Area ◽  
Numerical Work ◽  
Solar Module ◽  
Laser Scribing

Laser scribing is an important manufacturing process used to reduce photocurrent and resistance losses and increase solar cell efficiency through the formation of serial interconnections in large-area solar cells. High-quality scribing is crucial since the main impediment to large-scale adoption of solar power is its high-production cost (price-per-watt) compared to competing energy sources such as wind and fossil fuels. In recent years, the use of glass-side laser scribing processes has led to increased scribe quality and solar cell efficiencies; however, defects introduced during the process such as thermal effect, microcracks, film delamination, and removal uncleanliness keep the modules from reaching their theoretical efficiencies. Moreover, limited numerical work has been performed in predicting thin-film laser removal processes. In this study, a nanosecond (ns) laser with a wavelength at 532 nm is employed for pattern 2 (P2) scribing on CdTe (cadmium telluride) based thin-film solar cells. The film removal mechanism and defects caused by laser-induced micro-explosion process are studied. The relationship between those defects, removal geometry, laser fluences, and scribing speeds are also investigated. Thermal and mechanical numerical models are developed to analyze the laser-induced spatiotemporal temperature and pressure responsible for film removal. The simulation can well-predict the film removal geometries, transparent conducting oxide (TCO) layer thermal damage, generation of microcracks, film delamination, and residual materials. The characterization of removal qualities will enable the process optimization and design required to enhance solar module efficiency.

Light Scattering by Textured Al-Doped Zinc Oxide Film for Thin Film Silicon Solar Cells Coated on Glass Substrates

2012 ◽  
Vol 509 ◽  
pp. 279-287
Author(s):  
Deng Kui Miao ◽  
Qing Nan Zhao ◽  
Yu Hong Dong ◽  
Wen Hui Yuan ◽  
Lei Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Light Scattering ◽  
Electrical Properties ◽  
Light Trapping ◽  
Zinc Oxide Film ◽  
Silicon Thin Film ◽  
Glass Substrates ◽  
Ceramic Targets ◽  
Sputtering System

ZnO:Al thin films were deposited on low-iron glass substrates (size: 1100×1400 mm2 ) in an in-line sputtering system, using ZnO:Al ceramic targets. The initially smooth films exhibit high transparencies (T≥85% for visible light) and excellent electrical properties (carrier concentration N=3.810×1020cm-3, mobility μ=20.47 cm2/V•s). The films, etched by diluted HCl for different time, appear roughness morphology with suitable angles and crater structure, used for controlling the light scattering properties of the textured ZnO:Al films. Moreover, the electrical properties are not affected by the etching process. Thus, it is possible to optimize separately the electro-optical and light trapping properties. The textured ZnO:Al films (haze 21.2%, 550 nm) were used as front contacts for amorphous silicon thin film solar cells prepared by PECVD, 6.5% conversion efficiency were obtained.

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