Electrical and Structural Characterization of the Interface of Wafer Bonded InP/Si

AbstractA study of the interfacial properties of wafer bonded InP/Si is presented. The electrical properties are measured by bonding InP to Si with different doping concentrations and by measuring the current voltage characteristics of the bonded pairs. Two different kinds of structures are studied: 1) n+InP doped to 3×1018 cm-3 bonded with n+Si doped to 1×1019 cm-3, and 2) n+InP doped to 3×1018 cm-3 bonded with p-Si doped to 6×1014 cm-3. After a 350°C anneal, structure 1 shows low resistive ohmic behavior while structure 2 is rectifying due to its higher sensitivity to interfacial chemistry. Indeed, both the reverse and forward current are reduced by annealing in structure 2, suggesting the formation of an interfacial barrier during annealing. This hypothesis is supported by High Resolution Transmission Electron Microscopy combined with Fourier Transform Infrared Spectroscopy, which indicate the formation of an amorphous interfacial oxide from the reaction of adsorbed water trapped at the InP/Si interface.

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Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes

MRS Proceedings ◽

10.1557/proc-0892-ff13-08 ◽

2005 ◽

Vol 892 ◽

Author(s):

Steven Boeykens ◽

Maarten Leys ◽

Marianne Germain ◽

Jef Poortmans ◽

Benny Van Daele ◽

...

Keyword(s):

Bipolar Transistors ◽

Heteroepitaxial Growth ◽

Temperature Dependent ◽

Lattice Matching ◽

Transmission Electron ◽

Current Voltage ◽

Capacitance Voltage ◽

Si Doped ◽

P Type

AbstractApplication of SiC substrates instead of the most commonly used sapphire for the heteroepitaxial growth of III-Nitrides offers advantages as better lattice matching, higher thermal conductivity, and electrical conductivity. This namely offers interesting perspectives for the development of vertical III-Nitride devices for switching purposes. For example, an AlGaN/SiC heterojunction could improve the performance of SiC bipolar transistors. In this work, n-type GaN layers have been grown by MOVPE on p-type 4H-SiC substrates using Si doped Al0.08Ga0.92N or Al0.3Ga0.7N nucleation layers. They have been characterized with temperature dependent current-voltage (I-V-T), capacitance-voltage (C-V) techniques and transmission electron microscopy (TEM).

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Characterization of Electrically Pulsed Chromium Disilicide Fusible Links

MRS Proceedings ◽

10.1557/proc-523-103 ◽

1998 ◽

Vol 523 ◽

Cited By ~ 3

Author(s):

A.G. Domenicucci ◽

B. Cunningham ◽

P. Tsang

Keyword(s):

Unique Sequence ◽

Microstructural Characteristics ◽

Physical Measurements ◽

Transmission Electron ◽

Current Voltage ◽

Before And After ◽

Current Voltage Characteristics ◽

Voltage Pulses ◽

Hole Current

AbstractFusible links, fabricated from silicon rich chromium disilicide thin films, were subjected to voltage pulses in the 3–6 volt range. An optimum voltage existed at which the fuses blew. Transmission electron microscopy (TEM) was used to study the microstructural characteristics of the fuses both before and after the application of the voltage pulses. The TEM characterization, coupled with electrical and physical measurements, revealed that the mechanism underlying the fuse blow was hole current induced Si electromigration. Below the optimum voltage, the amount of Si transported was insufficient to cause fuse rupture. Above the optimum voltage, the current- voltage characteristics of the fuses became nonlinear and a unique sequence of material phases was formed. The composition of the phases suggests that both thermomigration and electromigration processes were operating at voltages above the optimum voltage.

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SIMULATION AND INVESTIGATION OF PARAMETERS OF THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF DIODE STRUCTURES OF THE MICROCIRCUIT KT101

Scientific and Technical Volga region Bulletin ◽

10.24153/2079-5920-2018-8-5-109-112 ◽

2018 ◽

Vol 8 (5) ◽

pp. 109-112

Author(s):

N.N. Bespalov ◽

◽

Y.V. Goryachkin ◽

K.Y. Pankin ◽

◽

...

Keyword(s):

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

MRS Proceedings ◽

10.1557/proc-391-327 ◽

1995 ◽

Vol 391 ◽

Author(s):

W.F. Mcarthur ◽

K.M. Ring ◽

K.L. Kavanagh

Keyword(s):

Leakage Current ◽

Diffusion Barrier ◽

Depth Profiling ◽

Electrical Characterization ◽

Implantation Dose ◽

Cu Metallization ◽

Reverse Leakage Current ◽

Transmission Electron ◽

Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

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The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

Physica B Condensed Matter ◽

10.1016/j.physb.2013.01.021 ◽

2013 ◽

Vol 415 ◽

pp. 77-81 ◽

Cited By ~ 23

Author(s):

Muhammad Tahir ◽

Muhammad Hassan Sayyad ◽

Fazal Wahab ◽

Dil Nawaz Khan ◽

Fakhra Aziz

Keyword(s):

Schottky Diode ◽

Electrical Characterization ◽

Current Voltage ◽

Current Voltage Characteristics

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Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

MRS Proceedings ◽

10.1557/proc-235-305 ◽

1991 ◽

Vol 235 ◽

Author(s):

Ying Wu ◽

W. Savin ◽

T. Fink ◽

N. M. Ravindra ◽

R. T. Lareau ◽

...

Keyword(s):

Electrical Characterization ◽

Furnace Annealing ◽

Si Substrates ◽

Conventional Furnace ◽

Mass Spec ◽

Current Voltage ◽

Shallow Junctions ◽

Current Voltage Characteristics ◽

Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

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Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.717.113 ◽

2013 ◽

Vol 717 ◽

pp. 113-116

Author(s):

Sani Klinsanit ◽

Itsara Srithanachai ◽

Surada Ueamanapong ◽

Sunya Khunkhao ◽

Budsara Nararug ◽

...

Keyword(s):

Leakage Current ◽

Schottky Diode ◽

Room Temperature ◽

The Other ◽

Low Power Consumption ◽

Initial Value ◽

X Ray ◽

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

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Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Solid-State Electronics ◽

10.1016/0038-1101(95)00093-9 ◽

1996 ◽

Vol 39 (1) ◽

pp. 83-87 ◽

Cited By ~ 79

Author(s):

Enise Ayyildiz ◽

Abdulmecit Türüt ◽

Hasan Efeoğlu ◽

Sebahattin Tüzemen ◽

Mustafa Sağlam ◽

...

Keyword(s):

Interfacial Layer ◽

Series Resistance ◽

Schottky Diodes ◽

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.749 ◽

2016 ◽

Vol 858 ◽

pp. 749-752 ◽

Cited By ~ 4

Author(s):

Anatoly M. Strel'chuk ◽

Viktor V. Zelenin ◽

Alexei N. Kuznetsov ◽

Joseph Tringe ◽

Albert V. Davydov ◽

...

Keyword(s):

Series Resistance ◽

Degradation Mechanism ◽

Schottky Diodes ◽

Defect Structures ◽

Induced Current ◽

Forward Current ◽

Current Voltage ◽

Before And After ◽

Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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