Effects of Indium on the Properties of N-Type CdS Thin Films Deposited by Spray Pyrolysis

1986 ◽  
Vol 77 ◽  
Author(s):  
Y. T. Kim ◽  
S. C. Park ◽  
S. K. Chung
Keyword(s):  
Thin Films ◽  
Doping Level ◽  
Thermal Activation ◽  
Energy Gap ◽  
Indium Content ◽  
Optical Energy Gap ◽  
Electrical And Optical Properties ◽  
Free Carriers ◽  
Order Of Magnitude ◽  
Cds Thin Films

ABSTRACTEffects of the doping level of indium impurity on electrical and optical properties of the CdS thin films, prepared with solution-sprayed method have been studied. The density of free carriers can be raised to an order of magnitude higher than that of non-doped case by increasing doping level of indium up to 0.01mole-% while indium doping does not significantly change the mobility from its value in non-doped samples. The optical energy gap is decreased with increasing indium content while the thermal activation energy remains unchanged. The experimental results are discussed in terms of the self compensation and radiative recombination phenomena.

ON THE OPTICAL CHARACTERISTICS OF CdS THIN FILMS DEPOSITED BY QUASI-CLOSED VOLUME TECHNIQUE

2004 ◽  
Vol 18 (09) ◽  
pp. 1287-1297 ◽  
Author(s):  
MIHAELA RUSU ◽  
IULIA SALAORU ◽  
M. E. POPA ◽  
G. I. RUSU
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Absorption Spectra ◽  
Energy Gap ◽  
Index Of Refraction ◽  
Closed Volume ◽  
Optical Energy Gap ◽  
Cds Thin Films

Cadmium sulfide (CdS) thin films (d=0.15–1.15 μ m ) were deposited onto glass substrates by the quasi-closed volume technique under vacuum. The investigations shown that the films are polycrystalline and have a hexagonal structure. It was experimentally established that the films with stable structure can be obtained if they are submitted to a heat treatment, consisting of several succesive heating/cooling cycles within a given temperature range (ΔT=300–600 K ), the temperature dependence of the electrical conductivity becomes reversible. For heat-treated samples, the values of thermal activation energy calculated from the temperature dependence of the electrical conductivity, ranged between 2.30–2.45 eV. The spectral dependences of the transmission and absorption coefficients were studied in the range 500–1400 nm. The influence of heat treatment on the shape of the absorption spectra and dispersion index of refraction is studied for samples with different thickness. Optical energy gap, calculated from the absorption spectra was in the range 2.30–2.5 eV.

scholarly journals Study Influence of Substrate Temperature on Optical Properties of CdS Thin Films Prepared by Chemical Spray pyrolysis

2019 ◽  
Vol 32 (1) ◽  
pp. 6 ◽  
Author(s):  
Karrar Mahdi Saleh
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Energy Gap ◽  
Nitrate Solution ◽  
Chemical Spray Pyrolysis ◽  
Optical Energy Gap ◽  
Chemical Spray ◽  
Cds Thin Films

This study aims to prepare Cadmium Sulphide (CdS) thin films using thermal Chemical Spray Pyrolysis (CSP) on glass of different temperatures substrate from cadmium nitrate solution. Constant thickness was (430 ± 20 nm) and the effect of substrate temperature on the optical properties of prepared thin films. Optical properties have been studied from transmittance and absorbance spectral within wavelengths range (360 - 900 nm). The results show that all the prepared films have a direct electron transitions and optical energy gap between (2.31-2.44 eV). They also show that the transmittance and optical energy gap of films prepared from nitrate solution increase with increasing of substrate temperature, then transmittance start downward with the continued increase in temperature (400, 450) oC.

scholarly journals Electrical and Optical Properties of :H Thin Films Prepared by Thermal Evaporation Method

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
A. A. J. Al-Douri ◽  
M. F. A. Alias ◽  
A. A. Alnajjar ◽  
M. N. Makadsi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Energy Gap ◽  
Dopant Concentration ◽  
Amorphous Film ◽  
Growth Conditions ◽  
Optical Energy Gap ◽  
Electrical And Optical Properties ◽  
Thermal Evaporation Method

Thin a-:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the :H thin films as pure, doped with 3.5% of Al (p-type) and that doped with 3.5% As (n-type), were proposed.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

scholarly journals Irradiation Effects on The Sensitivity of ZnO Thin Films Synthesized on Glass Substrate by Sol-gel Method

2021 ◽  
pp. 130-137
Author(s):  
Yasir Yahya Kasim ◽  
Ghazwan Ghazi Ali ◽  
Marwan Hafeedh Younus
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Irradiation Time ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Alpha Particles ◽  
Zno Thin Films ◽  
Optical Energy Gap ◽  
Gel Method ◽  
Sol Gel Method

This work investigates the structural, optical, and surface properties of ZnO thin films prepared by sol-gel method. The effect on waveguide sensor was examined at different irradiation durations of alpha particles. The X-ray diffraction (XRD) measurements revealed that the crystalline phase of ZnO thin films does not change after irradiation and showed a hexagonal structure of wurtzite type with an orientation toward (002). Moreover, ZnO thin films absorbance was increased with increasing irradiation time, whereas the transmittance was decreased. Additionally, increasing the irradiation time of alpha particles caused an increase in the extinction coefficient and the imaginary part,  while the optical energy gap of the ZnO samples was decreased. Finally, the maximum value of sensitivity was 42%, found at 6 min of irradiation duration.

scholarly journals The Effect of Substrate Temperature on the Band Transition, Cauchy Dispersion and Urbach Energy of Nanostructure CdO Thin Films

2015 ◽  
Vol 58 ◽  
pp. 83-89
Author(s):  
Muneer H. Jadduaa ◽  
Zainab Ali Harbi ◽  
Nadir F. Habubi
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Urbach Energy ◽  
Energy Gap ◽  
Chemical Spray Pyrolysis ◽  
Optical Parameters ◽  
Optical Energy Gap ◽  
Substrate Temperature Increase ◽  
Band Transition ◽  
Cdo Thin Films

Thin films of CdO were prepared by chemical spray pyrolysis (CSP) . The effect of different temperature substrate (300,350,400,450 and 500) °C on some optical parameters has been studied . The transmittance and the optical energy gap were increased from (2.503-2.589) eV ,on the contrary of the rest parameters such as refractive index , real and imaginary parts of dielectric constant and Urbach energy which they were decreased as the substrate temperature increase.

scholarly journals Optical and structural study for DLC thin films prepared by plasma jet

2019 ◽  
Vol 17 (40) ◽  
pp. 50-58
Author(s):  
S. J. Kadhem
Keyword(s):  
Thin Films ◽  
High Voltage ◽  
Plasma Torch ◽  
Energy Gap ◽  
Plasma Jet ◽  
Optical Energy Gap ◽  
X Ray ◽  
Xrd Diffraction ◽  
Fourier Transformation Infrared Spectroscopy ◽  
Uv Visible

Diamond-like carbon (DLC) homogeneous thin films were deposited from cyclohexane (Ccyclohexane (Ccyclohexane (Ccyclohexane (C cyclohexane (Ccyclohexane (Ccyclohexane (C cyclohexane (Ccyclohexane (C 6H12 ) liquid by using a plasma jet system which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5 which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5which operates with alternating high voltage 7.5 kv and kv and kv and kv and frequency 28 frequency 28frequency 28 frequency 28frequency 28frequency 28frequency 28frequency 28 kHz. kHz. The optical and structural properties and chemical bonding of these films were investigated. In this work, the effect of changing the distance between the substrate and the plasma torch (2, 2.5 and 3 cm) was studied. The flow rate of argon gas which used to generate the plasma was fixed (0.5 L/min). These films were characterized by UV–Visible spectrophotometer, X-ray diffractometer (XRD) and scanning electron microscopy (SEM) and Fourier transformation infrared spectroscopy (FTIR). The maximum absorption (λmax) appears around 312, 298.3 and 293.2 nm at the three distance between plasma torch and the substrate 2.5, 2 and 3 cm, respectively. The values of the optical energy gap are 3.47, 3.65 and 3.76 eV at a different distance (2, 2.5 and 3cm), respectively. In XRD diffraction pattern, The occurrence of diamond peaks and graphite peaks in the x-ray spectrum for these films Indicates that there is an occurrence of local ordered sp3 and sp2 for carbon domains and graphite respectively.

scholarly journals Effect of Pb percentage on optical parameters of PbxCd1-xSe thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 1-7
Author(s):  
Farah Q. Kamil
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Optical Measurements ◽  
Optical Parameters ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Glass Substrates

PbxCd1-xSe compound with different Pb percentage (i.e. X=0,0.025, 0.050, 0.075, and 0.1) were prepared successfully. Thin filmswere deposited by thermal evaporation on glass substrates at filmthickness (126) nm. The optical measurements indicated thatPbxCd1-xSe films have direct optical energy gap. The value of theenergy gap decreases with the increase of Pb content from 1.78 eV to1.49 eV.

scholarly journals optical proprties of poly crystaline CdS thin films

2005 ◽  
Vol 2 (2) ◽  
pp. 231-235
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Energy Gap ◽  
Glass Temperature ◽  
Calculated Energy ◽  
Cds Thin Films ◽  
Temperature Preparation

Studied the optical properties of the membranes CdS thin containing different ratios of ions cadmium to sulfur attended models manner spraying chemical gases on the rules of the glass temperature preparation (350c) were calculated energy gap allowed direct these membranes as observed decrease in the value of the energy gap at reducing the proportion ofsulfur ions as absorption coefficient was calculated

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