Growth and Characterization of Chemically Vapor Deposited Beta-Sic Epilayers on 6H Alpha-Sic Substrates

1986 ◽  
Vol 77 ◽  
Author(s):  
H. S. Kong ◽  
J. T. Glass ◽  
R. F. Davis ◽  
S. R. Nutt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gas Flow ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACTHigh quality, β-SiC (111) monocrystalline films have been epitaxially grown via chemical vapor deposition at 1683K on hexagonal 6H αc-SiC (0001) using a (SiH4 + C2H4)/(H2) gas flow rate ratio of 1:3000. Cross-sectional transmission electron microscopy showed almost no line or planar defects at the film/substrate interface and a low density within the bulk of the film. Furthermore, high resolution transmission electron microscopy revealed a coherent β-SiC/α-SiC interface. Secondary ion mass spectrometry indicated that the diffusion of the Al in the substrate into the as-grown film was negligible. Unintentionally doped films are n-type with the carrier concentrations virtually always in the range of 1016-1017cm3, as determined by capacitance-voltage measurements. A gold-β-SiC Schottky diode having an ideality constant of approximately 1.6 was fabricated on the β-SiC epilayer.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Characterization of nanorods in BaNb2O6-doped Er123 films revealed by cross-sectional transmission electron microscopy

2008 ◽  
Vol 468 (15-20) ◽  
pp. 1638-1642 ◽  
Author(s):  
K. Yamada ◽  
A. Ichinose ◽  
S. Horii ◽  
H. Kai ◽  
R. Teranishi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Transmission Electron
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