Ge and Gesl Heteroepitaxy on Si(100) by MBE

ABSTRACTWe have grown a series of Ge and graded Si1-xGex epilayers on (100)Si substrates by MBE under different conditions. The quality of the layers has been characterized by cross-sectional TEM, Rutherford backscattering/ channeling and x-ray diffraction. This work addresses the optimization of growth temperature, (300–700°C) an evaluation of compositional grading, the effect of the incorporation of strained layer superlattice dislocation filters and post growth anneal cycles. Particular attention has been paid to grading GexSi1-x, x = 0 to 1 and the growth morphology of intermediate alloy epilayers.

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Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

MRS Proceedings ◽

10.1557/proc-0891-ee03-14 ◽

2005 ◽

Vol 891 ◽

Author(s):

Tomohiko Takeuchi ◽

Suzuka Nishimura ◽

Tomoyuki Sakuma ◽

Satoru Matumoto ◽

Kazutaka Terashima

Keyword(s):

Epitaxial Layer ◽

Careful Analysis ◽

X Ray Diffraction ◽

Si Substrate ◽

Cross Sectional ◽

X Ray ◽

Si Substrates ◽

Impurity Doping ◽

Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

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Optical properties of GaN with Ga and N polarity

MRS Proceedings ◽

10.1557/proc-693-i10.3.1 ◽

2001 ◽

Vol 693 ◽

Author(s):

M. A. Reshchikov ◽

D. Huang ◽

F. Yun ◽

P. Visconti ◽

T. King ◽

...

Keyword(s):

Molecular Beam ◽

Threading Dislocations ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Radiative Efficiency ◽

Sapphire Substrates ◽

Transmission Electron ◽

And Inversion

AbstractWe compared photoluminescence (PL) and cross-sectional transmission electron microscopy (TEM) characteristics of GaN samples with Ga and N polarities grown by molecular beam epitaxy (MBE) on sapphire substrates. Ga-polar films grown at low temperature typically have very smooth surfaces, which are extremely difficult to etch with acids or bases. In contrast, the N-polar films have rougher surfaces and can be easily etched in hot H3PO4 or KOH. The quality of the X-ray diffraction spectra is also much better in case of Ga-polar films. Surprisingly, PL efficiency is always much higher in the N-polar GaN, yet the features and shape of the PL spectra are comparable for both polarities. We concluded that, despite the excellent quality of the surface, MBE-grown Ga-polar GaN layers contain higher concentration of nonradiative defects. From the analyses of cross-sectional TEM investigations, we have found that Ga-polar films have high density of threading dislocations (5x109 cm-2) and low density of inversion domains (1x107 cm-2). For N-polar GaN the situation is the reverse: the density of dislocations and inversion domains are 5x108 and ~1x1011 cm-2, respectively. One of the important conclusions derived from the combined PL and TEM study is that inversion domains do not seem to affect the radiative efficiency very adversly, whereas dislocations reduce it significantly.

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Epitaxial Ferroelectric Heterostructures of Isotropic Metallc Oxide (SrRuO3) and Pb(Zr0.52Ti0.48)O3

MRS Proceedings ◽

10.1557/proc-310-145 ◽

1993 ◽

Vol 310 ◽

Cited By ~ 12

Author(s):

C. B. Eom ◽

R.B. Van Dover ◽

Julia M. Phillips ◽

R.M. Fleming ◽

R.J. Cava ◽

...

Keyword(s):

X Ray Diffraction ◽

Metallic Oxide ◽

High Crystalline Quality ◽

Cross Sectional ◽

X Ray ◽

Si Substrates ◽

Transmission Electron ◽

Fatigue Characteristics ◽

Large Remnant Polarization ◽

Coherent Interfaces

AbstractWe have fabricated epitaxial ferroelectric heterostructures of isotropic metallic oxide (SrRuO3) and ferroelectric thin films [SrRuO3/Pb(Zr0.52Ti0.48)O3 /SrRuO3] on (100) SrTiO3 and YSZ buffer layered Si substrates by 90° off-axis sputtering. These heterostructures have high crystalline quality and coherent interfaces as revealed by X-ray diffraction, Rutherford backscattering spectroscopy and cross-sectional transmission electron microscopy. The ferroelectric layers exhibit superior fatigue characteristics over 1010 cycles with large remnant polarization.

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CHANNELING ANALYSIS OF Ge EPITAXIAL LAYER ON Si SUBSTRATE AND DOPED Ga ATOMS BY USING RBS AND PIXE METHODS

International Journal of PIXE ◽

10.1142/s0129083592000130 ◽

1992 ◽

Vol 02 (02) ◽

pp. 137-149

Author(s):

KOKI TANAKA ◽

EIICHI YAGI ◽

KAZUTO KAWAKAMI ◽

AKIHIRO ONO

Keyword(s):

Growth Temperature ◽

Layer Growth ◽

Intermediate Annealing ◽

Si Substrate ◽

Cross Sectional ◽

Lattice Disorder ◽

Si Substrates ◽

Step Procedure ◽

20 Nm

On the crystalline quality of Ge layers heteroepitaxially grown on Si substrates by the MBE two-step procedure without the intermediate annealing process, the effect of growth temperature and thickness of the first layer was investigated between 135 and 600 °C, and for 20 and 200 nm, respectively, by means of RBS-channeling and cross-sectional TEM methods. The second layer growth temperature was fixed at 600 °C. It was found that, in reducing the total amount of lattice disorder, the two-step procedure has an advantage over the direct deposition, and 200 nm is more favorable than 20 nm as the first layer thickness. The Ge layer of the best quality was obtained when the first layer of 200nm was grown at 400–500 °C, and subsequently the second layer was grown at 600 °C. The PIXE-channeling method was effectively applied to locate Ga atoms doped in the Ge layer grown by the two-step procedure at 300 and 550 °C. Approximately 40% of Ga atoms were located at substitutional sites and the rest at random sites, probably in the form of precipitates.

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Ion Beam Synthesis of Buried Single Crystal Erbium Silicide

MRS Proceedings ◽

10.1557/proc-201-319 ◽

1990 ◽

Vol 201 ◽

Cited By ~ 1

Author(s):

A. Golanski ◽

R. Feenstra ◽

M. D. Galloway ◽

J. L. Park ◽

S. J. Pennycook ◽

...

Keyword(s):

Single Crystal ◽

Ion Beam ◽

Annealing Process ◽

X Ray Diffraction ◽

Cross Sectional ◽

Single Crystalline ◽

X Ray ◽

Buried Layer ◽

High Doses

AbstractHigh doses (1016–1017/cm2) of 170 keV Er+ were implanted into single-crystal 〈111〉Si at implantation temperatures between 350°C and 520°C. Annealing at 800°C in vacuum following the implant, the growth and coalescence of ErSi2 precipitates leads to a buried single crystalline ErSi2 layer. This has been studied using Rutherford backscattering/channeling, X-ray diffraction, cross-sectional TEM and resistance versus temperature measurements. Samples implanted at 520°C using an Er dose of 7 × 1016/cm2 and thermally annealed were subsequently used as seeds for the mesocpitaxial growth of the buried layer during a second implantation and annealing process. Growth occurs meso-epitaxially along both interfaces through beam induced, defect mediated mobility of Er atoms. The crystalline quality of the ErSi2 layer strongly depends on the temperature during the second implantation.

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High Quality GaP Growth on Si Substrates By Mocvd

MRS Proceedings ◽

10.1557/proc-116-319 ◽

1988 ◽

Vol 116 ◽

Author(s):

K. Uchida ◽

Y. Kohama ◽

M. Tajima ◽

T. Soga ◽

T. Jimbo ◽

...

Keyword(s):

Mass Spectroscopy ◽

Diffraction Peak ◽

Crystal Quality ◽

X Ray Diffraction ◽

High Quality ◽

Double Crystal ◽

X Ray ◽

Si Substrates ◽

Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

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Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

MRS Proceedings ◽

10.1557/proc-220-147 ◽

1991 ◽

Vol 220 ◽

Author(s):

P. M. Adams ◽

R. C. Bowman ◽

V. Arbet-Engols ◽

K. L. Wang ◽

C. C. Ahn

Keyword(s):

Electron Microscopy ◽

X Ray Diffraction ◽

Cross Sectional ◽

Substrate Orientation ◽

X Ray ◽

Si Substrates ◽

Transmission Electron ◽

Superlattice Structures ◽

Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

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Novel Multiferroic Lead-Free BaTiO3/FeBSi Composite Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.157 ◽

2010 ◽

Vol 123-125 ◽

pp. 157-160

Author(s):

Zhen Zhen Zhou ◽

Deng Lu Hou ◽

Li Ma ◽

Cong Mian Zhen

Keyword(s):

Intermediate Phase ◽

Ion Beam ◽

Composite Films ◽

Ion Beam Sputtering ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Si Substrates ◽

Microscopy Image ◽

Beam Sputtering

“Green” multiferroic BaTiO3/FeBSi composite films were grown by pulsed laser deposition and ion beam sputtering on general Pt/Ti/SiO2/Si substrates. Room temperature X-ray diffraction and Raman scattering show that the crystal structures of BaTiO3 and FeBSi are tetragonal and amorphous, respectively, and no additional or intermediate phase peaks appears in the composite films. A cross-sectional scanning electron microscopy image clearly demonstrates a 2-2 type structure with sharp interface between the top FeBSi layer and bottom BaTiO3 layer. The magnetic properties of the top FeBSi are obviously modified by the bottom BaTiO3. The composite films show obvious ferroelectric feature.

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Growth of CuInS2 Films on Crystalline Substrates

MRS Proceedings ◽

10.1557/proc-426-303 ◽

1996 ◽

Vol 426 ◽

Author(s):

R. Hunger ◽

R. Scheer ◽

M. Alt ◽

H. J. Lewerenz

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam ◽

Secondary Phases ◽

X Ray Diffraction ◽

Growth Morphology ◽

Cross Sectional ◽

X Ray ◽

Transmission Electron ◽

Scanning Electron

AbstractCuInS2 films were grown by molecular beam epitaxy (MBE) on hydrogen terminated Si(111) substrates with 4° miscut. X-ray diffraction (XRD) texture analysis reveals that CuInS2 was grown heteroepitaxially with the epitaxial relationships CuInS2(112) II Si(111) and [111] II [111]. Moreover, a substantial amount of rotational twins is observed. The crystalline order is maintained across the interface as observed by cross-sectional transmission electron microscopy (XTEM). XRD and scanning electron microscopy (SEM) investigations show that nonstoichiometric preparation greatly influences the growth morphology and leads to the formation of secondary phases.

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Tem Investigation of Growth Temperature Dependence in Pulsed-Laser Ablated PLZT Films for Pyroelectric Applications

MRS Proceedings ◽

10.1557/proc-596-563 ◽

1999 ◽

Vol 596 ◽

Author(s):

R. N. Jacobs ◽

R. P. Godfrey ◽

W. L. Sarney ◽

C. W. Tipton ◽

L. Salamanca-Riba

Keyword(s):

Growth Temperature ◽

Deposition Temperature ◽

Structural Characteristics ◽

Pulsed Laser ◽

X Ray Diffraction ◽

Cross Sectional ◽

Domain Orientation ◽

X Ray ◽

Transmission Electron ◽

Diffraction Patterns

AbstractTransmission electron microscopy is used to examine the structural characteristics of Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) films grown directly on single crystal LaAlO3 (LAO) substrates. In particular, the domain orientation and film epitaxial quality as a function of substrate deposition temperature are obtained in the range 500–650°C and compared to x-ray diffraction results. High-resolution cross sectional images and electron diffraction patterns confirm that domain orientation and overall epitaxial quality can be optimized with growth temperature. In addition, these results show a direct correlation with pyroelectric measurements obtained for capacitor structures incorporating La1−xSrxCoO3 (LSCO) top and bottom electrodes.

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