Tem Investigation of Growth Temperature Dependence in Pulsed-Laser Ablated PLZT Films for Pyroelectric Applications

1999 ◽  
Vol 596 ◽  
Author(s):  
R. N. Jacobs ◽  
R. P. Godfrey ◽  
W. L. Sarney ◽  
C. W. Tipton ◽  
L. Salamanca-Riba
Keyword(s):  
Growth Temperature ◽  
Deposition Temperature ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Domain Orientation ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron microscopy is used to examine the structural characteristics of Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) films grown directly on single crystal LaAlO3 (LAO) substrates. In particular, the domain orientation and film epitaxial quality as a function of substrate deposition temperature are obtained in the range 500–650°C and compared to x-ray diffraction results. High-resolution cross sectional images and electron diffraction patterns confirm that domain orientation and overall epitaxial quality can be optimized with growth temperature. In addition, these results show a direct correlation with pyroelectric measurements obtained for capacitor structures incorporating La1−xSrxCoO3 (LSCO) top and bottom electrodes.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Stress Gradients Observed in Cu Thin Films Induced by Capping Layers

2009 ◽  
Vol 1156 ◽  
Author(s):  
Conal E. Murray ◽  
Paul R. Besser ◽  
Christian Witt ◽  
Jean L. Jordan-Sweet
Keyword(s):  
Deposition Temperature ◽  
Morphological Changes ◽  
Film Surface ◽  
Stress Distributions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Cu Films ◽  
Transmission Electron ◽  
Cu Film

AbstractGlancing-incidence X-ray diffraction (GIXRD) has been applied to the investigation of depth-dependent stress distributions within electroplated Cu films due to overlying capping layers. 0.65 μm thick Cu films plated on conventional barrier and seed layers received a CVD SiCxNyHz cap, an electrolessly-deposited CoWP layer, or a CoWP layer followed by a SiCxNyHz cap. GIXRD and conventional X-ray diffraction measurements revealed that strain gradients were created in Cu films possessing a SiCxNyHz cap, where a greater in-plane tensile stress was generated near the film / cap interface. The constraint imposed by the SiCxNyHz layer during cooling from the cap deposition temperature led to an increase in the in-plane stress of approximately 180 MPa from the value measured in the bulk Cu. However, Cu films possessing a CoWP cap without a SiCxNyHz layer did not exhibit depth-dependent stress distributions. Because the CoWP capping deposition temperature was much lower than that employed in SiCxNyHz deposition, the Cu experienced elastic deformation during the capping process. Cross-sectional transmission electron microscopy indicated that the top surface of the Cu films exhibited extrusions near grain boundaries for the samples undergoing the thermal excursion during SiCxNyHz deposition. The conformal nature of these caps confirmed that the morphological changes of the Cu film surface occurred prior to capping and are a consequence of the thermal excursions associated with cap deposition.

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Hua Li ◽  
Jianping Sang ◽  
Chang Liu ◽  
Hongbing Lu ◽  
Juncheng Cao
Keyword(s):  
Interface Layer ◽  
Interfacial Microstructure ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Gan Heterostructure

AbstractSingle crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$ (0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN} $$ and $$ [2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN} $$.

Microstructural Studies of Sputtered Co90Fe10/Ag GMR Multilayers

1997 ◽  
Vol 475 ◽  
Author(s):  
J.D. Jarratt ◽  
T.J. Klemmer ◽  
J.A. Barnard
Keyword(s):  
Multilayer Films ◽  
X Ray Diffraction ◽  
Satellite Peak ◽  
Cross Sectional ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Diffraction Patterns ◽  
Microstructural Studies

ABSTRACTThe microstructure of Co90Feio/Ag giant magnetoresistive multilayer films has been investigated using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy. Columnar grains with a (111) fiber growth texture is observed. A comparison is made between the observed layering structure and earlier multilayer schematics based on the literature and magnetic and magnetoresistive measurements as a function of layer thickness. A direct correlation is made between superlattice satellite peak signals from selected area electron diffraction patterns and XRD scans.

Thin Films of SrFeO2.5+x - Effect of Preferred Orientation on Oxygen Uptake

1994 ◽  
Vol 343 ◽  
Author(s):  
Brian W. Sanders ◽  
Jianhua Yao ◽  
Michael L. Post
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Oxygen Uptake ◽  
Growth Temperature ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oriented Films

ABSTRACTPulsed laser ablation has been used to deposit thin films of SrFeO25+x (x = 0 to ≈0.5). Previous work has shown that the orientation of the films, determined by powder x-ray diffraction depended strongly upon the deposition temperature. Films grown below 770 K showed little or no orientation. A growth temperature of 900 K resulted in films oriented (200). Growth temperatures of > 1000 K produced films oriented predominantly (110). At 673 K in an oxygen atmosphere, oriented films readily converted from the oxygen deficient brownmillerite form (x=0) to the oxygen rich cubic (or distorted cubic) perovskite form (x≈0.3). Films which exhibited no initial orientation did not react with oxygen under these conditions. Cycling non-oriented films between 230 and 800 ppm of oxygen in 101.3 kPa of nitrogen at 673 K resulted in weak (110) orientation. Once oriented, the films reacted readily with oxygen and exhibited measurable resistance changes. The conversion from oxygen deficient to oxygen rich form was monitored by x-ray diffraction and the DC resistance of the films.

Chemistry, morphology and structural characteristics of synthetic Al-lizardite

Clay Minerals ◽  
2010 ◽  
Vol 45 (2) ◽  
pp. 131-143 ◽  
Author(s):  
M. Bentabol ◽  
M. D. Ruiz Cruz ◽  
I. Sobrados
Keyword(s):  
Structural Characteristics ◽  
X Ray Diffraction ◽  
Hydrothermal Conditions ◽  
Single Population ◽  
X Ray ◽  
Cell Parameters ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Microscopy Images ◽  
Stacking Disorder

AbstractAl-lizardite has been synthesized under hydrothermal conditions (200ºC). Morphologically, Al-lizardite consists of thin platy particles ~400 Å wide and ~150 Å thick. Structurally, the X-ray diffraction patterns indicate that the 2H2 polytype is dominant, with cell parameters: a = 5.311(0.006) Å; c = 14.333 (0.013) Å and space group P63. High-resolution transmission electron microscopy images revealed, however, the presence of other polytypes and abundant stacking disorder. Chemically, Al-lizardite consists of a single population with average tetrahedral composition Si1.74Al0.26. In contrast to previously described Al-rich serpentines (amesite and Al-lizardite), this Al-lizardite is characterized by an asymmetrical Al distribution, with VIAl ≈0.70 and IVAl ≈0.25 atoms per formula unit.

Growth temperature dependence of crystal symmetry in Nb-doped BaTiO3 thin films

2013 ◽  
Vol 03 (02) ◽  
pp. 1350009 ◽  
Author(s):  
Young Heon Kim ◽  
Xubing Lu ◽  
Marco Diegel ◽  
Roland Mattheis ◽  
Dietrich Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Defect Density ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Threading Defects ◽  
Tetragonal Phase Transition

Growth temperature effects on the microstructure of Nb -doped BaTiO 3 thin films of the composition BaTi 0.98 Nb 0.02 O 3 are studied using X-ray diffraction and transmission electron microscopy (TEM). Reciprocal space maps and electron diffraction patterns show that the a-axis lattice parameter increases and the c-axis parameter decreases with increasing growth temperature, indicating a decrease of tetragonality. Bright-field TEM images show low and high densities of threading defects in films grown at low and high temperatures, respectively. The observations are discussed in terms of a hindering of the cubic-to-tetragonal phase transition by a high defect density and a high unit cell volume.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Cetyltrimethylammonium bromide- and ethylene glycol-assisted preparation of mono-dispersed indium oxide nanoparticles using hydrothermal method

2014 ◽  
Vol 68 (8) ◽  
Author(s):  
Selvakumar Dhanasingh ◽  
Dharmaraj Nallasamy ◽  
Saravanan Padmanapan ◽  
Vinod Padaki
Keyword(s):  
Ethylene Glycol ◽  
Hydrothermal Method ◽  
Indium Oxide ◽  
Cetyltrimethylammonium Bromide ◽  
Oxide Nanoparticles ◽  
X Ray Diffraction ◽  
Hydrothermal Conditions ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractThe influence of cetyltrimethylammonium bromide and ethylene glycol on the size and dispersion of indium oxide nanoparticles prepared under hydrothermal conditions was investigated. The precursor compound, indium hydroxide, obtained by the hydrothermal method in the absence as well as the presence of cetyltrimethylammonium bromide, was converted to indium oxide by sintering at 400°C. The formation of nanoscale indium oxide upon sintering was ascertained by the characteristic infrared adsorption bands and X-ray diffraction patterns of indium oxide. Transmission electron microscopy and band gap values confirmed that the cetyltrimethylammonium bromide facilitated the formation of indium oxide nanoparticles smaller in size and narrower in distribution than those prepared without the assistance of cetyltrimethylammonium bromide.

Facile Refluxing Synthesis of Hydroxyapatite Nanoparticles

2015 ◽  
Vol 68 (8) ◽  
pp. 1293 ◽  
Author(s):  
Pakvipar Chaopanich ◽  
Punnama Siriphannon
Keyword(s):  
Crystallite Size ◽  
Reaction Times ◽  
Single Step ◽  
Hydroxyapatite Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aqueous Mixture ◽  
Diffraction Patterns ◽  
Microscopy Images

Hydroxyapatite (HAp) nanoparticles were successfully synthesized from an aqueous mixture of Ca(NO3)2·4H2O and (NH4)2HPO4 by a facile single-step refluxing method using polystyrene sulfonate (PSS) as a template. The effects of reaction times, pH, and PSS concentration on the HAp formation were investigated. It was found that the crystalline HAp was obtained under all conditions after refluxing the precursors for 3 and 6 h. The longer refluxing time, the greater the crystallinity and the larger the crystallite size of the HAp nanoparticles. The HAp with poor crystallinity was obtained at pH 8.5; however, the well-crystallized HAp was obtained when reaction pH was increased to 9.5 and 10.5. In addition, the X-ray diffraction patterns revealed that the presence of PSS template caused the reduction of HAp crystallite size along the (002) plane from 52.6 nm of non-template HAp to 43.4 nm and 41.4 nm of HAp with 0.05 and 0.2 wt-% PSS template, respectively. Transmission electron microscopy images of the synthesized HAp revealed the rod-shaped crystals of all samples. The synthesized HAp nanoparticles were modified by l-aspartic acid (Asp) and l-arginine (Arg), having negative and positive charges, respectively. It was found that the zeta potential of HAp was significantly changed from +5.46 to –24.70 mV after modification with Asp, whereas it was +4.72 mV in the Arg-modified HAp. These results suggested that the negatively charged amino acid was preferentially adsorbed onto the synthesized HAp surface.

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