CHANNELING ANALYSIS OF Ge EPITAXIAL LAYER ON Si SUBSTRATE AND DOPED Ga ATOMS BY USING RBS AND PIXE METHODS

1992 ◽  
Vol 02 (02) ◽  
pp. 137-149
Author(s):  
KOKI TANAKA ◽  
EIICHI YAGI ◽  
KAZUTO KAWAKAMI ◽  
AKIHIRO ONO
Keyword(s):  
Growth Temperature ◽  
Layer Growth ◽  
Intermediate Annealing ◽  
Si Substrate ◽  
Cross Sectional ◽  
Lattice Disorder ◽  
Si Substrates ◽  
Step Procedure ◽  
20 Nm

On the crystalline quality of Ge layers heteroepitaxially grown on Si substrates by the MBE two-step procedure without the intermediate annealing process, the effect of growth temperature and thickness of the first layer was investigated between 135 and 600 °C, and for 20 and 200 nm, respectively, by means of RBS-channeling and cross-sectional TEM methods. The second layer growth temperature was fixed at 600 °C. It was found that, in reducing the total amount of lattice disorder, the two-step procedure has an advantage over the direct deposition, and 200 nm is more favorable than 20 nm as the first layer thickness. The Ge layer of the best quality was obtained when the first layer of 200nm was grown at 400–500 °C, and subsequently the second layer was grown at 600 °C. The PIXE-channeling method was effectively applied to locate Ga atoms doped in the Ge layer grown by the two-step procedure at 300 and 550 °C. Approximately 40% of Ga atoms were located at substitutional sites and the rest at random sites, probably in the form of precipitates.

Ge and Gesl Heteroepitaxy on Si(100) by MBE

1986 ◽  
Vol 77 ◽  
Author(s):  
D. C. Houghton ◽  
J.-M. Baribeau ◽  
P. Maigne ◽  
T. E. Jackman ◽  
I. C. Bassignana ◽  
...  
Keyword(s):  
Growth Temperature ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Superlattice Dislocation ◽  
Strained Layer Superlattice ◽  
Compositional Grading

ABSTRACTWe have grown a series of Ge and graded Si1-xGex epilayers on (100)Si substrates by MBE under different conditions. The quality of the layers has been characterized by cross-sectional TEM, Rutherford backscattering/ channeling and x-ray diffraction. This work addresses the optimization of growth temperature, (300–700°C) an evaluation of compositional grading, the effect of the incorporation of strained layer superlattice dislocation filters and post growth anneal cycles. Particular attention has been paid to grading GexSi1-x, x = 0 to 1 and the growth morphology of intermediate alloy epilayers.

GexSi1-x/Si superlattices grown on (100)-, (111)-, and (110)-oriented Si substrates

1989 ◽  
Vol 47 ◽  
pp. 580-581
Author(s):  
T. S. Kuan ◽  
S. S. Iyer ◽  
E. M. Yeo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Range Order ◽  
Defect Structures ◽  
Si Substrate ◽  
Growth Morphology ◽  
Si Substrates ◽  
Device Applications ◽  
20 Nm

GexSi1-x/Si heterostructures have been studied extensively because of their potential device applications. Previous GexSi1-x/Si heteroepitaxy studies have been mostly confined to growth on (100) surfaces and have focused on how growth temperature and GexSi1-x layer thickness affect growth morphology and defect generation. In this work we compare the quality of GexSi1-x/Si superlattices grown on (100)-, (111)-, and (110)-oriented Si substrates. We find that these three growth directions give rise to different growth morphologies and defect structures. Strained GexSi1-x layers in a (100) GexSi1-x/Si superlattice annealed at 450 – 500°C have recently been reported to exhibit a CuPt-type long-range order. Thus, another objective of this work is to explore whether growth along the <110> and/or <111> directions can promote or suppress the onset of ordering.Superlattices consisting of 18 layers of alternating Ge0.5Si0.5 (5 nm) and Si (20 nm) were grown by molecular beam epitaxy (MBE). Before growing the superlattice, a 3D-nm-thick Si buffer layer was grown on the Si substrate.

Temperature Dependence of Critical Thickness for Two Dimensional Growth of GexSi1−x on Si Substrate

1991 ◽  
Vol 220 ◽  
Author(s):  
Xun Wang ◽  
G. L. Zhou ◽  
T. C. Zhou ◽  
C. Sheng ◽  
M. R. Yu
Keyword(s):  
Growth Temperature ◽  
Critical Thickness ◽  
Layer Growth ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Si Substrate ◽  
Lower Growth ◽  
Germanium Content ◽  
Si Substrates ◽  
Molecular Beam Epitaxial

ABSTRACTFor obtaining good structural perfection, the molecular beam epitaxial (MBE) growth of GexSi1−x on Si substrate should not only be kept in the pseudomorphic form but also in layer-by-layer growth stage. We found that the two dimensional layer-by-layer growth of GexSi1−x on Si could persist to a certain deposition thickness, beyond that the transition to islanding growth occurs. The transition thickness is significantly dependent on the growth temperature and germanium content, and is always smaller than the critical thickness of pseudomorphic growth. In order to obtain good crystalline quality in growing GexSi1−x superlattices on Si substrates, the thickness of GexSi1−x layers should be controlled below the transition thickness and lower growth temperature is favorable.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Fabrication of n-Type Nanocrystalline Diamond/3C-SiC/p-Si(001) Junctions

2011 ◽  
Vol 679-680 ◽  
pp. 524-527 ◽  
Author(s):  
Masaki Goto ◽  
Akira Koga ◽  
Kazuhiro Yamada ◽  
Yoshimine Kato ◽  
Kungen Teii
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Moderate Pressure ◽  
Cross Sectional ◽  
Si Substrates ◽  
Current Voltage ◽  
In The Beginning ◽  
P Type ◽  
20 Nm

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (~20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 366-367
Author(s):  
J.H. Mazur ◽  
J. Washburn ◽  
T. Henderson ◽  
J. Klem ◽  
W.T. Masselink ◽  
...  
Keyword(s):  
Cross Sections ◽  
Low Cost ◽  
Electronic Devices ◽  
Compound Semiconductors ◽  
View Point ◽  
Si Substrate ◽  
Antiphase Boundaries ◽  
Cross Sectional ◽  
Mbe Growth ◽  
Si Substrates

Possibility of growth of epitaxial lll-V (GaAs, InP, GaP, etc.) compound semiconductors on nonpolar substrates (Ge,Si) is of considerable interest from the view point of monolithic integration of lll-V optoelectronic and Si electronic devices. The growth of GaAs and AIGaAs layers on Si substrates is additionally attractive because of good mechanical strength and low cost of Si substrates. However, a principal difficulty in growing polar semiconductors on nonpolar substrates is that there are no preferential bonding sites for cations and anions in the first layer of growth, which can result in antiphase boundaries (APB’s) in addition to defects due to misfit (∼4% for GaAs on Si).In this work GaAs layers were grown on (100) Si substrates using procedures described elsewhere. The MBE growth started from a first deposition of As as a prelayer on the Si substrate followed by GaAs growth at 580°C. Cross-sectional TEM specimens were prepared using the same procedures as reported earlier for the case of Si-SiO2 cross-sections.

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

2010 ◽  
Vol 645-648 ◽  
pp. 147-150 ◽  
Author(s):  
Eiji Saito ◽  
Sergey Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
High Rate ◽  
Si Substrate ◽  
Single Crystalline ◽  
Step Process ◽  
Si Substrates ◽  
Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

2011 ◽  
Vol 679-680 ◽  
pp. 801-803
Author(s):  
Ji Sheng Han ◽  
Sima Dimitrjiev ◽  
Li Wang ◽  
Alan Iacopi ◽  
Qu Shuang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Light Emission ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Structural Quality ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Si Substrates

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

Crystallographic Analysis of (110)CeO2/(100)Si Using RBS/Channeling Technique

1993 ◽  
Vol 312 ◽  
Author(s):  
Masataka Satoh ◽  
Yasuhiro Yamamoto ◽  
Shigeyuki Nakajima ◽  
Yoshinobu Sakurai ◽  
Tomoyasu Inoue ◽  
...  
Keyword(s):  
Single Crystal ◽  
Crystallographic Analysis ◽  
Crystalline Quality ◽  
Depth Information ◽  
Planar Channeling ◽  
Si Substrate ◽  
Si Substrates

AbstractEpitaxially grown CeO2 layers on (100)Si substrates are studied using the RBS/channeling technique. The crystallographic correlation between the overgrown layers and off-oriented Si substrates is precisely analyzed by means of constructing stereographic projections obtained from the planar channeling dips. From the stereographic projections for the CeO2 layer on the 4° off-oriented Si substrate, it is clearly seen not only that the epitaxial (110)CeO2 layer is single crystal with the direction defined as [001]CeO2 ║ [011]Si, but also that the crystalline quality of (110)CeO2 on (100)Si can be improved by use of the off-oriented substrate. The inclined epitaxial direction is also detected as the depth information.

Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

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