Single-crystal and Nano-columnar Growth of Gadolinium-doped Ceria Thin Films on Oxide Substrates Studied Using Electron Microscopy

2003 ◽  
Vol 795 ◽  
Author(s):  
D. X. Huang ◽  
C. L. Chen ◽  
A. J. Jacobson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Single Crystal ◽  
Grain Growth ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Doped Ceria ◽  
Columnar Grain ◽  
Film Substrate ◽  
Gadolinium Doped Ceria

ABSTRACTGadolinium-doped ceria (GDC) thin films were grown by pulsed laser ablation on various oxide single crystal substrates including MgO, YSZ, LAO, NGO, and STO with different film-substrate lattice mismatch ratios. The film microstructures were characterized mainly by using electron microscopy. A clear influence of the filmsubstrate lattice mismatch on the film crystallinity has been observed. The GDC films usually exhibit columnar grain growth for a large range of film-substrate lattice mismatch ratios. A cube-on-cube growth of GDC film on MgO has been observed with a surprisingly high lattice mismatch ratio of 28%. The highest film crystallinity is obtained on the LAO substrates under a small compressive strain. This single-crystalline GDC film shows no columnar grain growth but presents a novel directionally-aligned precipitated Gd-rich nanoparticle system, which plays a specific role in relaxing various kinds of strain fields induced during the thin film growth to ensure the film crystallinity.

Microstructure of SrTiO3 Thin Films as Single Layer and Incorporated in Yba2Cu3O7-x/SrTiO3 Multilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Interfacial Dislocations ◽  
The Individual ◽  
Film Substrate

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Interfacial Structure of BaRuO3 Thin Films Grown On (111) SrTiO3

2000 ◽  
Vol 654 ◽  
Author(s):  
W. Tian ◽  
M. K. Lee ◽  
C. B. Eom ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Intermediate Layer ◽  
Interfacial Structure ◽  
Initial Growth ◽  
Growth Modes ◽  
Transmission Electron ◽  
Quantitative Image ◽  
Film Substrate

AbstractBaRuO3 thin films were grown on (111) SrTiO3substrate by 90° off-axis rf-sputtering. Transmission electron microscopy studies revealed that the films consist of the metastable 4H hexagonal polymorph of BaRuO3 along with few defects. The films are c-axis oriented, single crystalline with the in-plane orientation relationship with respect to the SrTiO3substrate of [112 0] BaRuO3 // [110] SrTiO3. High-resolution transmission electron microscopy (HRTEM) studies of the film-substrate interface revealed the existence of a thin intermediate layer of the 9R hexagonal polymorph of BaRuO3 between the (111) SrTiO3 substrate and the 4H film. The formation mechanism for the intermediate layer is not fully understood though. Through the combination of HRTEM and quantitative image simulations, the atomic structure of the interface between the 9R intermediate layer and the underneath (111) SrTiO3 was constructed. Three initial growth modes were observed, each of them adopting the local continuity of the oxygen octahedral sublattice across the interface.

Electron Microscopy Study Of Mocvd-Grown Tio2Thin Films and Tio2/Al203 Interfaces

1990 ◽  
Vol 209 ◽  
Author(s):  
Y. Gao ◽  
K. L. Merkle ◽  
H. L. M. Chang ◽  
T. J. Zhang ◽  
D. J. Lam
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lattice Mismatch ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Rutile Structure ◽  
Atomic Structures ◽  
Transmission Electron ◽  
Twinning Direction ◽  
Mocvd Technique

ABSTRACTTiO2 thin films grown on (1120) sapphire at 800°C by the MOCVD technique have been characterized by transmission electron microscopy. The TiO2 thin films are single crystalline and have the rutile structure. The epitaxial orientation relationship between the TiO2 thin films (R) and the substrate (S) has been foundto be: (101)[010]R║(1l20)[0001]s. Growth twins in the films are commonly observed with the twin plane{101} and twinning direction <011>. Detailed atomic structures of the twin boundaries and TiO2/α-Al203 interfaces have been investigated by highresolution electron microscopy (HREM).When the interfaces are viewed in the direction of [010]R/[000l]S, the interfaces are found to be structurally coherent in the direction of [1Ol]R/[1100]s,in which the lattice mismatch at the interfaces is about 0.5%.

scholarly journals Columnar grain growth of FePt(L10) thin films

2012 ◽  
Vol 111 (7) ◽  
pp. 07B720 ◽  
Author(s):  
En Yang ◽  
Hoan Ho ◽  
David E. Laughlin ◽  
Jian-Gang Zhu
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Columnar Grain

scholarly journals Key-features in processing and microstructure for achieving giant electrostriction in gadolinium doped ceria thin films

2016 ◽  
Vol 118 ◽  
pp. 1-7 ◽  
Author(s):  
Mahmoud Hadad ◽  
Husnain Ashraf ◽  
Gaurav Mohanty ◽  
Cosmin Sandu ◽  
Paul Muralt
Keyword(s):  
Thin Films ◽  
Doped Ceria ◽  
Key Features ◽  
Gadolinium Doped Ceria
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