scholarly journals Unexpected Mode of Plastic Deformation in Cu Damascene Lines Undergoing Electromigration

2004 ◽  
Vol 812 ◽  
Author(s):  
Arief S. Budiman ◽  
N. Tamura ◽  
B. C. Valek ◽  
K. Gadre ◽  
J. Maiz ◽  
...  

AbstractAn unexpected mode of plastic deformation was observed in damascene Cu interconnect test structure during an in-situ electromigration experiment and before the onset of visible microstructural damages (void, hillock formation). We show here, using a synchrotron technique of white beam X-ray microdiffraction, that the extent of this electromigration-induced plasticity is dependent on the line width. The grain texture of the line might also play an important role. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. This early stage behavior can have a direct bearing on the final failure stage of electromigration.

2002 ◽  
Vol 738 ◽  
Author(s):  
R.I. Barabash ◽  
G.E. Ice ◽  
N. Tamura ◽  
J.R. Patel ◽  
B.C. Valek ◽  
...  

ABSTRACTElectromigration during accelerated testing can induce early stage plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during anin-situelectromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.


2003 ◽  
Vol 766 ◽  
Author(s):  
R.I. Barabash ◽  
N. Tamura ◽  
B.C. Valek ◽  
R. Spolenak ◽  
J.C. Bravman ◽  
...  

AbstractNew synchrotron x-ray microbeam methodology is used to analyze and test the reliability of interconnects. The early stage of plastic deformation induced by electromigration before any damages become visible has been recently revealed by white beam scanning X-ray microdiffraction during an accelerated test on Al interconnect lines. In the present paper, we provide a quantitative analysis of the dislocation structure generated in several micron-sized Al grains in both the middle region and ends of the interconnect line during anin-situelectromigration experiment. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of randomly distributed geometrically necessary dislocations as well as geometrically necessary boundaries. The orientation of the activated slip systems and rotation axis depends on the position of the grain in the interconnect line. The origin of the observed plastic deformation is considered in view of constraints for dislocation arrangements under applied electric field during electromigration. The coupling between plastic deformation and precipitation in the Al (0.5% wt. Cu) is observed for the grains close to the anode/cathode end of the line.


2008 ◽  
Vol 1079 ◽  
Author(s):  
Kai Chen ◽  
N. Tamura ◽  
K. N. Tu

ABSTRACTElectromigration is a phenomenon that has attracted much attention in the semiconductor industry because of its deleterious effects on electronic devices (such as interconnects) as they become smaller and current density passing through them increases. However, the effect of the electric current on the microstructure of interconnect lines during the very early stage of electromigration is not well documented. In the present report, we used synchrotron radiation based polychromatic X-ray microdiffraction for the in-situ study of the electromigration induced plasticity effects on individual grains of an Al (Cu) interconnect test structure. Dislocation slips which are activated by the electric current stressing are analyzed by the shape change of the diffraction peaks. The study shows polygonization of the grains due to the rearrangement of geometrically necessary dislocations (GND) in the direction of the current. Consequences of these findings are discussed.


2006 ◽  
Vol 914 ◽  
Author(s):  
Arief Budiman ◽  
N. Tamura ◽  
B. C. Valek ◽  
K. Gadre ◽  
J. Maiz ◽  
...  

AbstractThe Scanning X-Ray Submicron Diffraction (μ-SXRD) technique using focused synchrotron radiation white beam developed in the Beamline 7.3.3 at the ALS Berkeley Lab has been used to study the microstructural evolution at granular level of Cu polycrystalline lines during electromigration. Plastic deformation was observed in damascene Cu interconnect test structures during this in situ electromigration experiment and before the onset of visible microstructural damage (voiding, hillock formation). We show here that the extent of this electromigration-induced plasticity is dependent on the line width. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. The analysis of the Laue reflections allow for the determination of the geometrically necessary dislocation density in individual grains as well as for the misorientation angles between small angle boundaries generated by polygonization. The deformation geometry leads us to conclude that dislocations introduced by plastic flow lie predominantly in the direction of electron flow and may provide additional easy paths for the transport of point defects. Furthermore, we observe that the rotation axis of this plastic deformation coincides with one of the <112> line directions of the known slip systems for FCC crystal, and that it is always very close (within a few degrees) to the direction of the electron flow. This finding suggests a correlation of the proximity of certain <112> line directions to the direction of electron flow with the occurrence of plastic behavior. One important practical implication of this particular finding is that the grain texture of the line might thus play an important role in giving higher resistance towards early plastic response of the Cu line upon the electromigration loading.


2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
Thérèse Gorisse ◽  
Ludovic Dupré ◽  
Marc Zelsmann ◽  
Alina Vlad ◽  
Alessandro Coati ◽  
...  

We report the successful use of in situ grazing incidence small-angle X-ray scattering to follow the anodization of aluminum. A dedicated electrochemical cell was designed and developed for this purpose with low X-ray absorption, with the possibility to access all azimuthal angles (360°) and to remotely control the temperature of the electrolyte. Three well-known fabrication techniques of nanoporous alumina, i.e., single, double, and pretextured, were investigated. The differences in the evolution of the scattering images are described and explained. From these measurements, we could determine at which moment the pores start growing even for very short anodization times. Furthermore, we could follow the thickness of the alumina layer as a function of the anodization time by monitoring the period of the Kiessig fringes. This work is aimed at helping to understand the different steps taking place during the anodization of aluminum at the very early stages of nanoporous alumina formation.


2004 ◽  
Vol 387-389 ◽  
pp. 339-342 ◽  
Author(s):  
W. Pantleon ◽  
H.F. Poulsen ◽  
J. Almer ◽  
U. Lienert

1999 ◽  
Vol 06 (06) ◽  
pp. 1053-1060 ◽  
Author(s):  
N. TABET ◽  
J. AL-SADAH ◽  
M. SALIM

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.


2014 ◽  
Vol 16 (48) ◽  
pp. 26624-26630 ◽  
Author(s):  
C. A. F. Vaz ◽  
A. Balan ◽  
F. Nolting ◽  
A. Kleibert

In situX-ray photoemission electron microscopy reveals the evolution of chemical composition and magnetism of individual iron nanoparticles during oxidation.


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