Magnetic and Transport Properties of Ferromagnetic-PEEK Polymer Nanocomposite Prepared via Ion-Implantation

2004 ◽  
Vol 853 ◽  
Author(s):  
K. Ghosh ◽  
S. R. Mishra ◽  
J. Losby ◽  
T. Kehl ◽  
B. Robertson ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Polymer Nanocomposite ◽  
Implantation Technique ◽  
Hall Voltage ◽  
Conducting Channel ◽  
Exponential Law ◽  
Experimental Temperature Dependence ◽  
Temperature Dependence Of Conductivity ◽  
Magnetic Nature

ABSTRACTThin films of magnetic-nanocomposite are prepared using a novel two step ion-implantation technique. Structural assessment via TEM of the ion bombarded iron-polymer composite shows development of fine magnetic nanoparticles (20–50 A) in a carbonaceous matrix. The experimental temperature dependence of conductivity of the composite, in the temperature range 10–300 K, follows the exponential law σ = σo exp [(-To/T)γ], where To and γ are constants. The observed higher values of γ > 1 imply the presence of more than one conducting channel in the composite. The secondary conducting channels, beside hopping conductivity, may arise from the conducting graphitic matrix around Fe nanoparticles. The room temperature magneto-transport measurement indicates a 0.5% change in magnetoresistance at 0.5T field. The observed anomalous Hall voltage confirms the presence of magnetic nature of nanoparticles.

scholarly journals In-Situ and Ion Implantation Nitrogen Doping on Near Stoichiometric a-SiC:H Films

2004 ◽  
Vol 1 (2) ◽  
pp. 26-30
Author(s):  
A. R. Oliveira ◽  
M. N. P. Carreño
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Ion Implantation ◽  
Nitrogen Doping ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Implantation Technique ◽  
Electrical Conductivities

In this work we study the nitrogen n-type electrical doping of a-Si0.5C0.5:H films obtained by plasma enhanced chemical vapor deposition (PECVD) utilizing and comparing two doping techniques: in-situ (during the material growth) and ion implantation. The in-situ doped a-SiC:H films were obtained adding different amounts of N2 to the precursor gas mixture. For ion implantation four different nitrogen implanted concentrations were studied (between 1018 and 1021 atoms/ cm3) using multiple energies and doses to define a homogeneously doped layer. The doping experiments are carried out on a-SiC:H samples that present different structural order. The results show that high levels of electrical conductivity can be obtained with ion implantation technique. For in-situ technique the doping effect is also observed but must be improved in order to attain higher electrical conductivities. In the best case the room temperature dark conductivity for the sample implanted with 1021 nitrogens/cm3 was ~10-7 (Ω.cm)-1 and the activation energy was 0.2 eV. For in-situ doping the electrical dark conductivity reached values near 10-10 (Ω.cm)-1 at high temperatures and the activation energy was ~0.6 eV. Despite of the apparent low values of the electrical conductivity, these results are promising because we are dealing with a wide gap material and the doping processes are still not optimized.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Optical properties of surface modified polypropylene by plasma immersion ion implantation technique

2010 ◽  
Vol 97 (8) ◽  
pp. 081908 ◽  
Author(s):  
Sk. Faruque Ahmed ◽  
Myoung-Woon Moon ◽  
Chansoo Kim ◽  
Yong-Jun Jang ◽  
Seonghee Han ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Implantation Technique ◽  
Plasma Immersion Ion Implantation ◽  
Surface Modified

scholarly journals Room Temperature Gas Multisensor System Based on a Novel Polymer Nanocomposite Material

2014 ◽  
Vol 87 ◽  
pp. 152-155
Author(s):  
Mikhail Yablokov ◽  
Alexey Vasiliev ◽  
Andrey Varfolomeev ◽  
Sergey Zavyalov
Keyword(s):  
Room Temperature ◽  
Polymer Nanocomposite ◽  
Nanocomposite Material ◽  
Multisensor System

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

RSC Advances ◽  
2019 ◽  
Vol 9 (35) ◽  
pp. 20375-20384 ◽  
Author(s):  
Navdeep Kaur ◽  
Aman Mahajan ◽  
Viplove Bhullar ◽  
Davinder Paul Singh ◽  
Vibha Saxena ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Metal Nanoparticles ◽  
Dye Sensitized Solar Cells ◽  
Implantation Technique ◽  
Dye Sensitized ◽  
Stability Issue ◽  
The Stability ◽  
Sensitized Solar Cells ◽  
Ion Implanted

Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

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