Solid-state growth of nickel silicide nanowire by the metal-induced growth method

2006 ◽  
Vol 21 (11) ◽  
pp. 2936-2940 ◽  
Author(s):  
Joondong Kim ◽  
Jong-Uk Bae ◽  
Wayne A. Anderson ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim
Keyword(s):  
Solid State ◽  
Catalyst Layer ◽  
Nickel Silicide ◽  
Metal Species ◽  
Dominant Factor ◽  
Silicide Layer ◽  
Deposited Metal ◽  
Growth Method ◽  
Metal Induced Growth ◽  
State Growth

Unique nanowire growth was accomplished at 575 °C by the metal-induced growth (MIG) method. This involved a spontaneous reaction between metal and Si. The deposited metal worked as a catalyst layer to grow nanowires in the solid state. Various metals (Ni, Co, and Pd) were used in MIG nanowire fabrication, and the Ni-induced case was successful in demonstrating that metal species should be the dominant factor for growing nanowires. The Ni to Si composition was studied by energy dispersive spectroscopy showing the Ni diffusion inside the nanowire as well as the Ni silicide layer. The practical application of the MIG nanowire was proved by fabricating nanoscale contacts.

Metal-Induced Nickel Silicide Nanowire Growth Mechanism in the Solid State Reaction

2006 ◽  
Vol 910 ◽  
Author(s):  
Joondong Kim ◽  
Jong-Uk Bae ◽  
Wayne A. Anderson ◽  
Hyun-Mi Kim ◽  
Ki-Bum Kim
Keyword(s):  
Solid State ◽  
Catalyst Layer ◽  
Growth Direction ◽  
Nickel Silicide ◽  
Metal Species ◽  
Nanowire Growth ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Deposited Metal

AbstractA unique nanowire growth was accomplished at 575 oC by the metal-induced growth (MIG). That is a spontaneous reaction between metal and Si. The deposited metal worked as a catalyst layer to grow nanowire in the solid-state. Various metals (Ni, Co, and Pd) were used in MIG nanowire fabrication and Ni-induced case was successful in demonstrating that metal species should be a dominant mover in nanowire growth. Transmission electron microscopy investigation was performed to observe the nanowire growth direction. The Ni to Si composition was studied by energy dispersive spectroscopy showing the Ni diffusion inside the nanowire as well as the Ni silicide layer. The practical application MIG nanowire was proven by fabricating nanoscale contacts.

Spontaneous Growth of Nickel Silicide Nanowires and Formation of Self-Assembled Nanobridges by the Metal Induced Growth Method

2005 ◽  
Vol 872 ◽  
Author(s):  
Joondong Kim ◽  
Wayne A. Anderson ◽  
Young-Joo Song
Keyword(s):  
Low Temperatures ◽  
Nickel Silicide ◽  
Dc Magnetron Sputtering ◽  
Growth Property ◽  
Growth Method ◽  
Self Assembled ◽  
Metal Induced Growth ◽  
Lift Off ◽  
Si Wafer ◽  
Sputtering System

AbstractNickel monosilicide (NiSi) nanowires (NWs) have been fabricated by the metal induced growth (MIG) method. Ni as a catalyst was deposited on a SiO2 coated Si wafer. In a DC magnetron sputtering system, the Ni reacts at 575°C with sputtered Si to give nanowires. Different metal catalysts (Co and Pd) were used to prove the MIG NW growth mechanism. NiSi NWs were a single crystal structure, 20-80 nm in diameter and 1-10 μm in length. The linear NW growth property provided nanobridge formation in a trenched Si wafer. The trenches in a Si wafer were made by dry etching and a simple, conventional metal lift off method. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of ‘self and direct’ assembled ‘bottom-up’ fabrication concepts.

scholarly journals Solid-State Growth of Cspbi3 Perovskites: Phases Formation and Stability

2021 ◽  
Author(s):  
Jessica Satta ◽  
Alberto Casu ◽  
Daniele Chiriu ◽  
Carlo Carbonaro ◽  
Luigi Stagi ◽  
...  
Keyword(s):  
Solid State ◽  
Dynamic Equilibrium ◽  
Phase Evolution ◽  
Final Phase ◽  
Time Resolved ◽  
Potential Applications ◽  
Growth Method ◽  
Equilibrium Process ◽  
State Growth

Abstract Totally inorganic perovskites are playing an increasingly important role for their potential applications in optoelectronics devices. However, a big problem to be solved is the role of the different phases, the presence of which is closely linked to the growth method and to the role of impurities. In this article, we propose a solvent-free, solid-state growth method, which allows to obtain samples free of any organic residues. The analysis of structural (XRD and Raman measurements), optical (absorption, steady-time and time-resolved luminescence) and morphological (HRTEM imaging), permitted to understand the phase evolution during the synthesis as a function of the temporal duration. The dynamic equilibrium process at high temperature between the CsPbI3 and the starting precursors, CsI and PbI2, plays a fundamental role in the final phase. If, from one side, the α and δ phases are related to the exact stoichiometry, on the other hand an excess of CsI permits the formation of room temperature stable perovskite γ-phase and, with a further excess, the secondary Cs4PbI6 phase is obtained.

Ultrahigh piezoelectric coefficient of a lead-free K0.5Na0.5NbO3-based single crystal fabricated by a simple seed-free solid-state growth method

2019 ◽  
Vol 7 (47) ◽  
pp. 14845-14854 ◽  
Author(s):  
Minhong Jiang ◽  
Jingwei Zhang ◽  
Guanghui Rao ◽  
Dedong Li ◽  
Clive A. Randall ◽  
...  
Keyword(s):  
Solid State ◽  
Single Crystal ◽  
Piezoelectric Coefficient ◽  
Lead Free ◽  
Growth Method ◽  
State Growth

KNN-based crystals with ultrahigh piezoelectric coefficients (d33 = 1050 pC N−1, and d33* = 2290 pm V−1) were fabricated.

Seed-Free Solid-State Growth of Large Lead-Free Piezoelectric Single Crystals: (Na1/2K1/2)NbO3

2015 ◽  
Vol 98 (10) ◽  
pp. 2988-2996 ◽  
Author(s):  
Minhong Jiang ◽  
Clive A. Randall ◽  
Hanzheng Guo ◽  
Guanghui Rao ◽  
Rong Tu ◽  
...  
Keyword(s):  
Solid State ◽  
Single Crystals ◽  
Lead Free ◽  
State Growth

Growth of lithium iron silicates nanoplates with high energy facets via polymorphs transition for ehanced lithium-ion extraction/insertion reaction

2021 ◽  
pp. 2151015
Author(s):  
Anran Duan ◽  
Huali Qiao ◽  
Miao He ◽  
Ting Wang ◽  
Dan Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Thermal Instability ◽  
High Current Density ◽  
Lithium Ion ◽  
High Energy ◽  
Insertion Reaction ◽  
Ion Extraction ◽  
State Growth ◽  
Temperature Liquid

The anisotropic functionalities of nanostructured silicates are highly attractive for various applications, whereas the silicates’ nanostructure heavily relies on the reactions in low temperature liquid conditions. Due to the stubborn [SiO4][Formula: see text] lattice foundation and most surfactants’ thermal instability, it is extremely difficult to manipulate the nanostructure and preserve high energy lattice facets in the high temperature solid state growth of silicates. In this report, the polymorphs transition of Li2FeSiO4 is found to open a precious window for adsorbate–crystal interactions. By adsorbing on the intermediates of phase transition, Ethlyene glycol effectively promotes the solid-state growth of Li2FeSiO4 nanoplates at high temperature, of which the high energy (020) facet becomes the dominant and exhibits high activity for fast charge transportation. The obtained Li2FeSiO4 nanoplates show greatly enhanced reactivity for Li[Formula: see text] ions’ extraction/insertion, and exhibit excellent capacities at high current density (1–10 C) as the cathode material for lithium-ion batteries.

Low-temperature solid-state growth of three-dimensional bicontinuous nanoporous graphene with tunable porosity for lithium–sulfur batteries

2018 ◽  
Vol 6 (24) ◽  
pp. 11405-11415 ◽  
Author(s):  
L. Q. Lu ◽  
N. Schriever ◽  
J. Th. M. De Hosson ◽  
Y. T. Pei
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Low Temperatures ◽  
Three Dimensional ◽  
Lithium Sulfur Batteries ◽  
Nanoporous Graphene ◽  
State Growth ◽  
Growth Approach ◽  
Lithium Sulfur

In this work we developed a solid-state-growth approach for the synthesis of 3D interconnected bicontinuous nanoporous graphene (NPG) with the aid of nanoporous Ni templates at low temperatures (below 800 °C).

scholarly journals Precursor Phenomena of Barium Titanate Single Crystals Grown Using a Solid-State Single Crystal Growth Method Studied with Inelastic Brillouin Light Scattering and Birefringence Measurements

Molecules ◽  
2018 ◽  
Vol 23 (12) ◽  
pp. 3171 ◽  
Author(s):  
Soo Han Oh ◽  
Jae-Hyeon Ko ◽  
Ho-Yong Lee ◽  
Iwona Lazar ◽  
Krystian Roleder
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Barium Titanate ◽  
Single Crystal ◽  
Single Crystals ◽  
Melting Process ◽  
Point Of View ◽  
Crystal Quality ◽  
Cubic Phase ◽  
Growth Method

The nature of precursor phenomena in the paraelectric phase of ferroelectrics is one of the main questions to be resolved from a fundamental point of view. Barium titanate (BaTiO3) is one of the most representative perovskite-structured ferroelectrics intensively studied until now. The pretransitional behavior of BaTiO3 single crystal grown using a solid-state crystal growth (SSCG) method was investigated for the first time and compared to previous results. There is no melting process in the SSCG method, thus the crystal grown using a SSCG method have inherent higher levels of impurity and defect concentrations, which is a good candidate for investigating the effect of crystal quality on the precursor phenomena. The acoustic, dielectric, and piezoelectric properties, as well as birefringence, of the SSCG-grown BaTiO3 were examined over a wide temperature range. Especially, the acoustic phonon behavior was investigated in terms of Brillouin spectroscopy, which is a complementary technique to Raman spectroscopy. The obtained precursor anomalies of the SSCG-grown BaTiO3 in the cubic phase were similar to those of other single crystals, in particular, of high-quality single crystal grown by top-seeded solution growth method. These results clearly indicate that the observed precursor phenomena are common and intrinsic effect irrespective of the crystal quality.

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