Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

2001 ◽  
Vol 680 ◽  
Author(s):  
M. Ahoujja ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
J. E. Van Nostrand
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Variable Temperature ◽  
Type Region ◽  
Si Doping ◽  
Gas Source ◽  
Hall Effect Measurements ◽  
Si Doped

ABSTRACTHall-effect measurements were conducted on Si-doped AlxGa1−xN films grown on sapphire substrate by gas source molecular beam epitaxy. The Al mole fraction in the 1 [.proportional]m thick AlxGa1−xN was 0.0, 0.3, and 0.5, and the Si doping concentration was kept at a nominal value of 1018 cm−3. Variable temperature Hall-effect measurements reveal a presence of a highly degenerate n-type region at the AlxGa1−xN /sapphire interface. This degenerate interfacial layer dominates the electrical properties below 30 K and significantly affects the properties of the AlxGa1−xN layer. Thus, by using a two-layer conducting model, the carrier concentration and mobility of the AlxGa1−xN layer alone are obtained.

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

1991 ◽  
Vol 110 (4) ◽  
pp. 910-914 ◽  
Author(s):  
K. Rakennus ◽  
K. Tappura ◽  
T. Hakkarainen ◽  
H. Asonen ◽  
R. Laiho ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source ◽  
Interface Effects

Doping Study of Se into AlGaAs Layers Grown by MBE, and their Application to HEMT Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Maed ◽  
T. Ishikawa ◽  
K. Kondo
Keyword(s):  
Molecular Beam ◽  
Electron Gas ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Si Doping ◽  
Se Doping ◽  
Si Doped ◽  
Dx Center ◽  
Dimensional Electron Gas ◽  
Dopant Source

ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

scholarly journals Electrical Properties of Cubic InN And GaN Epitaxial Layers as a Function of Temperature

2000 ◽  
Vol 5 (S1) ◽  
pp. 216-222
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

Annealing of some II-IV-V2 crystals in the vapor of volatile constituents

2001 ◽  
Vol 692 ◽  
Author(s):  
Valeriy G. Voevodin ◽  
Olga V. Voevodina ◽  
Svetlana A. Bereznaya ◽  
Zoya V. Korotchenko ◽  
Nils C. Fernelius ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Chemical Analysis ◽  
Hall Effect ◽  
Gas Phase ◽  
Initial Imperfection ◽  
Structural Defects ◽  
Volatile Constituents ◽  
Hall Effect Measurements

AbstractExperiments on annealing of CdGeAs2-, CdSnAs2- and ZnGeP2-crystals in the vapor of volatile constituents were carried out. Conductivity and Hall effect measurements were performed to characterize the modification of electrical properties, caused by the interaction of the crystal with the gas phase during annealing. Literature data and the results of the present work are discussed based on the results of a quasi-chemical analysis. This yielded that the results of annealing depends essentially on both the conditions of the experiment and the initial imperfection of the crystal. The most probable native structural defects becoming apparent under the annealing were the following: for CdSnAs2 - SnCd, VAs; for CdGeAs2 - VAs, VCd, CdGe, GeCd; for CdSiAs2 - SiAs, VAs ; for CdSiP2 - VCd, VP; for ZnGeP2 - ZnGe, GeZn, VZn, VP; and for ZnSnP2- ZnSn, SnZn, VZn, VP.

Electrical properties of heavily Si‐doped (311)AGaAs grown by molecular beam epitaxy

1994 ◽  
Vol 65 (9) ◽  
pp. 1171-1173 ◽  
Author(s):  
K. Agawa ◽  
K. Hirakawa ◽  
N. Sakamoto ◽  
Y. Hashimoto ◽  
T. Ikoma
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doped

scholarly journals Growth of (110) GaAs/GaAs by Molecular Beam Epitaxy

1985 ◽  
Vol 46 ◽  
Author(s):  
L.T. Parechanian ◽  
E.R. Weber ◽  
T.L. Hierl
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Hall Effect ◽  
Room Temperature ◽  
Molecular Beam ◽  
Defect Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Order Of Magnitude ◽  
Hall Effect Measurements

AbstractThe simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAsintentionally doped with Si(∼lE16/cm^3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate. The films wereanalyzed by scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization.For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall Effect measurements yield room temperature donor concentrations for the (100) films of n∼l5/cm^3 while the (110) layers exhibit electron concentrations of n∼2El7/cm^3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature dependent Hall effect indicates that the activation energy of the deeper donor level lies ∼290 meV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasingthe arsenic flux during MBE growth. The nature of the defects involved with the growth process will be discussed.

Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

1997 ◽  
Vol 468 ◽  
Author(s):  
W. Götz ◽  
M. D. McCluskey ◽  
N. M. Johnson ◽  
D. P. Bour ◽  
E. E. Haller
Keyword(s):  
Hall Effect ◽  
Absorption Spectra ◽  
Thermal Activation ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Thermally Activated ◽  
Local Vibrational Mode ◽  
Hall Effect Measurements ◽  
Spectroscopic Identification ◽  
Mg Doped

ABSTRACTMg-doped GaN films grown by metalorganic chemical vapor deposition were characterized by variable-temperature Hall-effect measurements and Fourier-transform infrared absorption spectroscopy. As-grown, thermally activated, and deuterated Mg-doped GaN samples were investigated. The existence of Mg-H complexes in GaN is demonstrated with the observation of a local vibrational mode (LVM) at 3125 cm-1 (8 K). At 300 K this absorption line shifts to 3122 cm-1. The intensity of the LVM line is strongest in absorption spectra of as-grown GaN. Mg which is semi-insulating. Upon thermal activation, the intensity of the LVM line significantly decreases and an acceptor concentration of 2×1019cm-3 is derived from the Hall-effect data. After deuteration at 600°C the resistivity of the Mg-doped GaN increased by four orders of magnitude. A LVM line at 2321 cm-1 (8 K) appears in the absorption spectra which is consistent with the isotopie shift of the vibrational frequency when D is substituted for H.

Sign in / Sign up

Export Citation Format

Share Document