Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Lateral Diffusion and Capture of Iron in P-Type Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Kevin L. Beaman ◽  
Aditya Agarwal ◽  
Sergei V. Koveshnikov ◽  
George A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Lateral Diffusion ◽  
Lateral Motion ◽  
Dislocation Loops ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
P Type

AbstractThe lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities was done by diffusing to laterally placed dislocation loops formed by a self aligned ion implantation. Lateral changes in Fe concentration were determined using capacitance-voltage and deep level transient spectroscopy.

Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

2011 ◽  
Vol 99 (9) ◽  
pp. 092109 ◽  
Author(s):  
Emre Gür ◽  
Zeng Zhang ◽  
Sriram Krishnamoorthy ◽  
S. Rajan ◽  
S. A. Ringel
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Detailed Characterization

Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

1998 ◽  
Vol 510 ◽  
Author(s):  
D.Z. Chi ◽  
S. Ashok ◽  
D. Theodore
Keyword(s):  
Ion Implantation ◽  
Thermal Processing ◽  
Thermal Evolution ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Thermal Signature ◽  
P Type ◽  
Induced Defects

AbstractThermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 KeV, 1016 cm2Si+) under rapid thermal processing (RTP) have been investigated. Presence of implantation-induced electrically active defects has been confirmed by current-voltage (IV) and deep level transient spectroscopy (DLTS) measurements. DLTS characterization results show that the evolution of electrically active defects in the Si implanted samples under RTP depend critically on the RTP temperature: Hole traps HI (0.33 eV) and H4 (0.47 eV) appear after the highest temperature (950 °C) anneal, while a single trap H3 (0.26 eV) shows up at lower anneal temperatures (≤ 900 °C). The thermal signature of H4 defect is very similar to that of the iron interstitial while those of HI and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A most interesting finding is that the above interstitial related defects can be eliminated completely with Ti silicidation, apparently a result of vacancy injection. However the silicidation process itself introduces a new H2 (0.30 eV) level, albeit at much lower concentration. This same H2 level is also seen in unimplanted samples under RTP. The paper will present details of defect evolution under various conditions of RTP for samples with and without the self-implantation and silicidation.

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

Infrared behavior of aluminum nanostructure sculptured thin films

2008 ◽  
Vol 1080 ◽  
Author(s):  
Tino Hofmann ◽  
M. Schubert ◽  
D. Schmidt ◽  
E. Schubert
Keyword(s):  
Thin Films ◽  
Schottky Diodes ◽  
Glancing Angle Deposition ◽  
Wire Sample ◽  
Sculptured Thin Films ◽  
Glancing Angle ◽  
Infrared Spectral ◽  
Nanowire Sample ◽  
P Type

ABSTRACTWe report on fabrication, structural and infrared optical characterization of nanostructure aluminum sculptured thin films prepared by glancing angle deposition (GLAD) and controlled substrate motion on p-type silicon. We discuss two structures, one with plate-like and one with screw-like (chiral) morphology. While the plate-like sample possesses a metal Drude behavior in the infrared spectral range, the chiral nanowire sample behaves non-metallic and reveals a series of intriguing resonances, which are equally spaced in frequency by ∼7.5 THz. We suggest that formation of 3D nano resonator circuits consisting of inductances and capacitances has occurred within the screw-like conductive aluminum wire sample, which might be responsible for the observed resonances. We suggest conductive GLAD nanostructures in combination with Schottky diodes to facilitate active or passive THz detector and transmitter devices.

Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline SiC films and their use in Si heterojunction solar cells

2012 ◽  
Vol 520 (6) ◽  
pp. 2110-2114 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Shih-Yung Lo ◽  
Hsin-Yu Hsieh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Sic Films

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 183-187
Author(s):  
Chi Kwong Tang ◽  
Lasse Vines ◽  
Bengt Gunnar Svensson ◽  
Eduard Monakhov
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Depletion Region ◽  
Charge Carrier Concentration ◽  
Defect Level ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Wet Chemical ◽  
Transient Spectroscopy ◽  
P Type

The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using capacitance-voltage measurements (CV) and deep level transient spectroscopy (DLTS). Introduction of hydrogen was performed by wet chemical etching and subsequent reverve bias annealing of Al Schottky diodes. The treatment led to the appearance of the defect level characteristic to interstitial iron (Fei) with a corresponding decrease in the concentration of the Fe-B pair. Concentration versus depth profiles of the defects show that dissociation of Fe-B occurs in the depletion region and capacitance-voltage measurements unveil a decrease in the charge carrier concentration due to passivation of B. These quantitative observations imply strongly that H promotes dissociation of Fe-B releasing Fei whereas no detectable passivation of Fe-B or Fei by H occurs.

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

1999 ◽  
Vol 74 (9) ◽  
pp. 1263-1265 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
G. A. Rozgonyi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Type Silicon ◽  
P Type

Epitaxial Thin Film Growth and Device Development in Monocrystalline Alpha and Beta Silicon Carbide

1989 ◽  
Vol 162 ◽  
Author(s):  
Robert F. Davis ◽  
J. W. Palmour ◽  
J. A. Edmond
Keyword(s):  
Film Growth ◽  
Schottky Diodes ◽  
Leakage Currents ◽  
Device Development ◽  
Barrier Heights ◽  
Inversion Domain ◽  
Commercial Applications ◽  
Inversion Domain Boundaries ◽  
And Inversion ◽  
Sic Films

ABSTRACTHigh purity monocrystalline β-SiC films have been chemically vapor deposited on Si (100) and α-SiC (0001) by numerous groups around the world using SiH4 and C3H8 or C2H4 carried in H2. Films grown on nominal Si (100) contain substantial concentrations of dislocations, stacking faults and inversion domain boundaries; those deposited on α-SiC (0001) contain primarily double positioning boundaries. Both types of boundaries may be eliminated by using off-axis orientations of the respective substrates. However, the films grown on off-axis a substrates were the a(6H) polytype. Schottky diode, p-n junction, MESFET, MOSFET and HBT devices have been fabricated with encouraging results for future commercial applications. The barrier heights and ideality factors of Au Schottky diodes on β-SiC ranged from 0.9—1.15 eV and 1.2—1.6, respectively. However, the reverse leakage currents were much lower and the breakdown voltages considerably higher at all temperatures for the diodes on the α-SiC films. MESFETs fabricated using the diodes in the alpha films were superior to those in beta with the transconductance being more than 15 times greater in the former. Enhancement-and depletion-mode MOSFETs exhibited better behavior in terms of saturation, drain voltage and high temperature operation. All films produced on a-SiC substrates were superior to those produced in beta films grown on Si.

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