Structural, dielectric and ferroelectric characterization of PZT thin films
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In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V) characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.
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2001 ◽
Vol 121
(3)
◽
pp. 124-128
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2011 ◽
Vol 197-198
◽
pp. 1781-1784
The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology
2011 ◽
Vol 239-242
◽
pp. 891-894
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1998 ◽
Vol 08
(PR9)
◽
pp. Pr9-121-Pr9-124
◽
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