scholarly journals FEI Helios NanoLab 400S FIB-SEM

2016 ◽  
Vol 2 ◽  
Author(s):  
Doris Meertens ◽  
Max Kruth ◽  
Karsten Tillmann
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Sample Preparation ◽  
High Performance ◽  
Process Development ◽  
Ion Beam ◽  
High Deposition Rate ◽  
Contrast Imaging ◽  
X Ray ◽  
Sem Imaging

The FEI Helios NanoLab400S FIB-SEM is one of the world's most advanced DualBeamTM focused ion beam (FIB) platforms for transmission electron microscopy (TEM) sample preparation, scanning electron microscopy (SEM) imaging and analysis in semiconductor failure analysis, process development and process control. The FEI Helios NanoLab400S FIB-SEM combines an ElstarTM electron column for high-resolution and high-contrast imaging with a high-performance SidewinderM ion column for fast and precise cross sectioning. The FEI Helios NanoLab M 400S is optimised for high throughput high-resolution S/TEM sample preparation, SEM imaging and energy dispersive X-ray analysis. Its exclusive FlipStageTM and in situ STEM detector can flip from sample preparation to STEM imaging in seconds without breaking vacuum or exposing the sample to the environment. Platinum gas chemistry is the preferred metal deposition when a high deposition rate and precision of the deposition are required. Carbon deposition can be chosen as well. The system additionally allows for spatially resolved compositional analysis using the attached EDAX Genesis XM 4i X-ray microanalysis system.

Three Dimensional X-Ray Computed Tomography in Materials Science

MRS Bulletin ◽  
1988 ◽  
Vol 13 (1) ◽  
pp. 13-18 ◽  
Author(s):  
J.H. Kinney ◽  
Q.C. Johnson ◽  
U. Bonse ◽  
M.C. Nichols ◽  
R.A. Saroyan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Sample Preparation ◽  
Visible Light ◽  
Three Dimensional ◽  
Materials Characterization ◽  
Imaging Technology ◽  
X Ray ◽  
X Ray Imaging ◽  
Visible Light Imaging

Imaging is the cornerstone of materials characterization. Until the middle of the present century, visible light imaging provided much of the information about materials. Though visible light imaging still plays an extremely important role in characterization, relatively low spatial resolution and lack of chemical sensitivity and specificity limit its usefulness.The discovery of x-rays and electrons led to a major advance in imaging technology. X-ray diffraction and electron microscopy allowed us to characterize the atomic structure of materials. Many materials vital to our high technology economy and defense owe their existence to the understanding of materials structure brought about with these high-resolution methods.Electron microscopy is an essential tool for materials characterization. Unfortunately, electron imaging is always destructive due to the sample preparation that must be done prior to imaging. Furthermore, electron microscopy only provides information about the surface of a sample. Three dimensional information, of great interest in characterizing many new materials, can be obtained only by time consuming sectioning of an object.The development of intense synchrotron light sources in addition to the improvements in solid state imaging technology is revolutionizing materials characterization. High resolution x-ray imaging is a potentially valuable tool for materials characterization. The large depth of x-ray penetration, as well as the sensitivity of absorption crosssections to atomic chemistry, allows x-ray imaging to characterize the chemistry of internal structures in macroscopic objects with little sample preparation. X-ray imaging complements other imaging modalities, such as electron microscopy, in that it can be performed nondestructively on metals and insulators alike.

A Transmission X-ray Microscope (TXM) for Non-destructive 3D Imaging of ICs at Sub-100 nm Resolution

2002 ◽  
Author(s):  
Steve Wang ◽  
Frederick Duewer ◽  
Shashidar Kamath ◽  
Christopher Kelly ◽  
Alan Lyon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Process Development ◽  
Imaging System ◽  
Ion Beam ◽  
Layer By Layer ◽  
X Ray ◽  
Submicron Structures

Abstract Xradia has developed a laboratory table-top transmission x-ray microscope, TXM 54-80, that uses 5.4 keV x-ray radiation to nondestructively image buried submicron structures in integrated circuits with at better than 80 nm 2D resolution. With an integrated tomographic imaging system, a series of x-ray projections through a full IC stack, which may include tens of micrometers of silicon substrate and several layers of Cu interconnects, can be collected and reconstructed to produce a 3D image of the IC structure at 100 nm resolution, thereby allowing the user to detect, localize, and characterize buried defects without having to conduct layer by layer deprocessing and inspection that are typical of conventional destructive failure analysis. In addition to being a powerful tool for both failure analysis and IC process development, the TXM may also facilitate or supplant investigations using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and focused ion beam (FIB) tools, which generally require destructive sample preparation and a vacuum environment.

Electron microscopy of rabbit FC crystals

1983 ◽  
Vol 41 ◽  
pp. 730-731
Author(s):  
Robert A. Grant ◽  
Laura L. Degn ◽  
Wah Chiu ◽  
John Robinson
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Molecular Replacement ◽  
X Ray ◽  
X Ray Crystallography ◽  
Resolution Electron ◽  
Replacement Technique ◽  
Hydrated Crystal ◽  
Molecular Structure Analysis

Proteolytic digestion of the immunoglobulin IgG with papain cleaves the molecule into an antigen binding fragment, Fab, and a compliment binding fragment, Fc. Structures of intact immunoglobulin, Fab and Fc from various sources have been solved by X-ray crystallography. Rabbit Fc can be crystallized as thin platelets suitable for high resolution electron microscopy. The structure of rabbit Fc can be expected to be similar to the known structure of human Fc, making it an ideal specimen for comparing the X-ray and electron crystallographic techniques and for the application of the molecular replacement technique to electron crystallography. Thin protein crystals embedded in ice diffract to high resolution. A low resolution image of a frozen, hydrated crystal can be expected to have a better contrast than a glucose embedded crystal due to the larger density difference between protein and ice compared to protein and glucose. For these reasons we are using an ice embedding technique to prepare the rabbit Fc crystals for molecular structure analysis by electron microscopy.

High Resolution Study of Polytypism: Application to SiC and Au3 Mn

1982 ◽  
Vol 40 ◽  
pp. 540-541
Author(s):  
G. Van Tendeloo ◽  
J. Van Landuyt ◽  
S. Amelinckx
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Sequence ◽  
X Ray ◽  
Powerful Technique ◽  
Resolution Study ◽  
The Ideal

Polytypism has been studied for a number of years and a wide variety of stacking sequences has been detected and analysed. SiC is the prototype material in this respect; see e.g. Electron microscopy under high resolution conditions when combined with x-ray measurements is a very powerful technique to elucidate the correct stacking sequence or to study polytype transformations and deviations from the ideal stacking sequence.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

“High Resolution High Voltage Electron Microscopy”

1968 ◽  
Vol 26 ◽  
pp. 326-327
Author(s):  
Benjamin M. Siegel
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Voltage ◽  
Full Potential ◽  
Contrast Imaging ◽  
High Voltage Electron Microscopy ◽  
Low Contrast ◽  
Voltage Electron ◽  
Critical Areas ◽  
High Voltage Electron

The potential advantages of high voltage electron microscopy for extending the limits of resolution and contrast in imaging low contrast objects, such as biomolecular specimens, is very great. The results of computations will be presented showing that at accelerating voltages of 500-1000 kV it should be possible to achieve spacial resolutions of 1 to 1.5 Å and using phase contrast imaging achieve adequate image contrast to observe single atoms of low atomic number.The practical problems associated with the design and utilization of the high voltage instrument are, optimistically, within the range of competence of the state of the art. However, there are some extremely important and critical areas to be systematically investigated before we have achieved this competence. The basic electron optics of the column required is well understood, but before the full potential of an instrument capable of resolutions of better than 1.5 Å are realized some very careful development work will be required. Of great importance for the actual achievement of high resolution with a high voltage electron microscope is the fundamental limitation set by the characteristics of the high voltage electron beam that can be obtained from the accelerator column.

Scanning Electron Microscopy and x-ray analysis of microparticles and early hydration effects

1995 ◽  
Vol 53 ◽  
pp. 692-693
Author(s):  
Yun Lu ◽  
David C. Joy
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Resolution ◽  
Morphological Development ◽  
Early Hydration ◽  
X Ray ◽  
Blended Cements ◽  
Powder Particles ◽  
Chemical Wastes ◽  
Scanning Electron

High resolution scanning electron microscopy (SEM) and energy dispersive x-ray analysis (EDXA) were performed to investigate microparticles in blended cements and their hydration products containing sodium-rich chemical wastes. The physical appearance of powder particles and the morphological development at different hydration stages were characterized by using high resolution SEM Hitachi S-900 and by SEM S-800 with a EDX spectrometer. Microparticles were dispersed on the sample holder and glued by 1% palomino solution. Hydrated bulk samples were dehydrated by acetone and mounted on the holder by silver paste. Both fracture surfaces and flat cutting sections of hydrating samples were prepared and examined. Some specimens were coated with an 3 nm thick Au-Pd or Cr layer to provide good conducting surfaces. For high resolution SEM S-900 observations the accelerating voltage of electrons was 1-2 KeV to protect the electron charging. Microchemical analyses were carried out by S800/EDS equipped with a LINK detector of take-off angle =40°.

Recent applications of TEM to the study of interfaces

1990 ◽  
Vol 48 (4) ◽  
pp. 308-309
Author(s):  
C. Barry Carter
Keyword(s):  
High Resolution ◽  
Sample Preparation ◽  
Grain Boundaries ◽  
Diffuse Scattering ◽  
Imaging Techniques ◽  
Amorphous Material ◽  
Contrast Imaging ◽  
Current State ◽  
Actual Nature ◽  
High Resolution Images

This paper will review the current state of understanding of interface structure and highlight some of the future needs and problems which must be overcome. The study of this subject can be separated into three different topics: 1) the fundamental electron microscopy aspects, 2) material-specific features of the study and 3) the characteristics of the particular interfaces. The two topics which are relevant to most studies are the choice of imaging techniques and sample preparation. The techniques used to study interfaces in the TEM include high-resolution imaging, conventional diffraction-contrast imaging, and phase-contrast imaging (Fresnel fringe images, diffuse scattering). The material studied affects not only the characteristics of the interfaces (through changes in bonding, etc.) but also the method used for sample preparation which may in turn have a significant affect on the resulting image. Finally, the actual nature and geometry of the interface must be considered. For example, it has become increasingly clear that the plane of the interface is particularly important whenever at least one of the adjoining grains is crystalline.A particularly productive approach to the study of interfaces is to combine different imaging techniques as illustrated in the study of grain boundaries in alumina. In this case, the conventional imaging approach showed that most grain boundaries in ion-thinned samples are grooved at the grain boundary although the extent of this grooving clearly depends on the crystallography of the surface. The use of diffuse scattering (from amorphous regions) gives invaluable information here since it can be used to confirm directly that surface grooving does occur and that the grooves can fill with amorphous material during sample preparation (see Fig. 1). Extensive use of image simulation has shown that, although information concerning the interface can be obtained from Fresnel-fringe images, the introduction of artifacts through sample preparation cannot be lightly ignored. The Fresnel-fringe simulation has been carried out using a commercial multislice program (TEMPAS) which was intended for simulation of high-resolution images.

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