A Transmission X-ray Microscope (TXM) for Non-destructive 3D Imaging of ICs at Sub-100 nm Resolution

2002 ◽  
Author(s):  
Steve Wang ◽  
Frederick Duewer ◽  
Shashidar Kamath ◽  
Christopher Kelly ◽  
Alan Lyon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Process Development ◽  
Imaging System ◽  
Ion Beam ◽  
Layer By Layer ◽  
X Ray ◽  
Submicron Structures

Abstract Xradia has developed a laboratory table-top transmission x-ray microscope, TXM 54-80, that uses 5.4 keV x-ray radiation to nondestructively image buried submicron structures in integrated circuits with at better than 80 nm 2D resolution. With an integrated tomographic imaging system, a series of x-ray projections through a full IC stack, which may include tens of micrometers of silicon substrate and several layers of Cu interconnects, can be collected and reconstructed to produce a 3D image of the IC structure at 100 nm resolution, thereby allowing the user to detect, localize, and characterize buried defects without having to conduct layer by layer deprocessing and inspection that are typical of conventional destructive failure analysis. In addition to being a powerful tool for both failure analysis and IC process development, the TXM may also facilitate or supplant investigations using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and focused ion beam (FIB) tools, which generally require destructive sample preparation and a vacuum environment.

scholarly journals Focused ion beam and advanced electron microscopy for nano defect failure analysis of LED

2018 ◽  
Author(s):  
R. Gunawan ◽  
E. Sugiarti ◽  
Isnaeni ◽  
R. I. Purawiardi ◽  
H. Widodo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam

scholarly journals Development of bacterial cellulose–ZnO–MWCNT hybrid membranes: a study of structural and mechanical properties

2020 ◽  
Vol 7 (6) ◽  
pp. 200592
Author(s):  
Bilal El Mrabate ◽  
Mahitha Udayakumar ◽  
Emília Csiszár ◽  
Ferenc Kristály ◽  
Máté Leskó ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Bacterial Cellulose ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Area Measurement ◽  
Hybrid Membranes ◽  
X Ray ◽  
Multi Walled Carbon Nanotube ◽  
Scanning Electron

Self-supported and flexible bacterial cellulose (BC) based hybrid membranes were synthesized and decorated with zinc oxide/multi-walled carbon nanotube (ZnO–MWCNT) composite additives in order to modify and tune their surface and bulk properties. Two types of ZnO–MWCNT additives with different morphologies were used in a wide concentration range from 0 to 90% for BC-based hybrids produced by filtration. The interaction between BC and ZnO–MWCNT and the effect of concentration and morphology of additives on the properties like zeta potential, hydrophilicity, electrical conductivity, etc. would be an important factor in various applications. Furthermore, the as-prepared hybrid membranes were characterized with the use of scanning electron microscopy (SEM), focused ion beam scanning electron microscopy (FIB-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray powder diffraction (XRD) and surface area measurement (BET). Applying the presented synthesis routes, the surface properties of BC-based membranes can be tailored easily. Results reveal that the as-prepared BC–ZnO–MWCNT hybrid membranes can be ideal candidates for different kinds of applications, such as water filtration or catalysts.

Direct Imaging of Device Characteristics In a Focused ion Beam System

1998 ◽  
Vol 4 (S2) ◽  
pp. 652-653 ◽  
Author(s):  
A. N. Campbell ◽  
J. M. Soden
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Material Removal ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Yield Enhancement ◽  
The Past ◽  
Design Changes ◽  
Design Debugging

A great deal can be learned about integrated circuits (ICs) and microelectronic structures simply by imaging them in a focused ion beam (FIB) system. FIB systems have evolved during the past decade from something of a curiosity to absolutely essential tools for microelectronics design verification and failure analysis. FIB system capabilities include localized material removal, localized deposition of conductors and insulators, and imaging. A major commercial driver for FIB systems is their usefulness in the design debugging cycle by (1) rewiring ICs quickly to test design changes and (2) making connection to deep conductors to facilitate electrical probing of complex ICs. FIB milling is also used for making precision cross sections and for TEM sample preparation of microelectronic structures for failure analysis and yield enhancement applications.

Magnetic Head Shorting Failure Analysis

2017 ◽  
Author(s):  
Liang Hong ◽  
Jia Li ◽  
Haifeng Wang
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Resistance Change ◽  
Root Cause ◽  
Transmission Electron ◽  
Root Cause Failure Analysis ◽  
Metal Layers

Abstract This paper provides an innovative root cause failure analysis method that combines multiple failure analysis (FA) techniques to narrow down and expose the shorting location and allow the material analysis of the shorting defect. It begins with a basic electrical testing to narrow down shorting metal layers, then utilizing mechanical lapping to expose over coat layers. This is followed by optical beam induced resistance change imaging to further narrow down the shorting location. Scanning electron microscopy and optical imaging are used together with focused ion beam milling to slice and view through the potential shorting area until the shorting defect is exposed. Finally, transmission electron microscopy (TEM) sample is prepared, and TEM analysis is carried out to pin point the root cause of the shorting. This method has been demonstrated successfully on Western Digital inter-metal layers shorting FA.

Focused Ion Beam Induced Deposition

1989 ◽  
Vol 147 ◽  
Author(s):  
John Melngailis ◽  
Patricia G. Blauner
Keyword(s):  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Diameter ◽  
X Ray ◽  
Metal Organic ◽  
Side Walls ◽  
Gas Molecules ◽  
Ion Species ◽  
Prototype Phase

AbstractFocused ion beam induced deposition is already in use commercially for the repair of clear defects in photomasks, where missing absorber is added. Research is being carried out to extend this technique to the repair of x-ray lithography masks and to the restructuring and repair of integrated circuits, particularly in the prototype phase. In this technique a local gas ambient is created, for example, by aiming a small nozzle at the surface. The gas molecules are thought to adsorb on the surface and to be broken up by the scanned focused ion beam. A deposit is formed with linewidth equal to the beam diameter which can be below 0.1 Ό m. At small beam diameters and low currents (50–100 pA) the time to deposit 1Όm3 is in the vicinity of 10–20 sec. If the gas is a hydrocarbon, the deposit is largely carbon, which is useful for photomask repair. On the other hand, if the gas is a metal halide or a metal organic, the deposit is metallic. The deposits have substantial concentrations of impurities due to the atoms in the organometallic, to the ion species used, or to the ambient in the vacuum chamber. Thus the resistivities of the "metal" films deposited typically range from 150 to 1000 ΌΏcm which is usable for some repairs. (Pure metals have resistivities in the range 2.5 to 12 pQcm.) We have deposited gold from dimethyl gold hexafluoro acetylacetonate and have achieved linewidths down to 0.1 Όm, patches of 1 Όm thickness with steep side walls and in some cases, resistivities approaching the bulk value. Other workers have reported deposits of Al, W, Ta, and Cr. We will review previous work in the field and present some of our own current results.

Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam

1990 ◽  
Vol 199 ◽  
Author(s):  
R. J. Young ◽  
E. C. G. Kirk ◽  
D. A. Williams ◽  
H. Ahmed
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cross Sectional ◽  
Transmission Electron ◽  
A New Technique ◽  
Sectional Analysis ◽  
Selection Of ◽  
Better Than

ABSTRACTA new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.

scholarly journals Focused Ion Beam in the Study of Biomaterials and Biological Matter

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Kathryn Grandfield ◽  
Håkan Engqvist
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Life Sciences ◽  
X Ray ◽  
The Past ◽  
Biological Matter ◽  
Dual Beam ◽  
Transmission Electron ◽  
Environmental Sem

The application of focused ion beam (FIB) techniques in the life sciences has progressed by leaps and bounds over the past decade. A once dedicated ion beam instrument, the focused ion beam today is generally coupled with a plethora of complementary tools such as dual-beam scanning electron microscopy (SEM), environmental SEM, energy dispersive X-ray spectroscopy (EDX), or cryogenic possibilities. All of these additions have contributed to the advancement of focused ion beam use in the study of biomaterials and biological matter. Biomaterials, cells, and their interfaces can be routinely imaged, analyzed, or prepared for techniques such as transmission electron microscopy (TEM) with this comprehensive tool. Herein, we review the uses, advances, and challenges associated with the application of FIB techniques to the life sciences, with particular emphasis on TEM preparation of biomaterials, biological matter, and their interfaces using FIB.

scholarly journals Die Backside FIB Preparation for Identification and Characterization of Metal Voids

1999 ◽  
Author(s):  
Ann N. Campbell ◽  
William F. Filter ◽  
Nicholas Antoniou
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Cross Sections ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Milling Process ◽  
Plan View ◽  
Metal Interconnects

Abstract Both the increased complexity of integrated circuits, resulting in six or more levels of integration, and the increasing use of flip-chip packaging have driven the development of integrated circuit (IC) failure analysis tools that can be applied to the backside of the chip. Among these new approaches are focused ion beam (FIB) tools and processes for performing chip edits/repairs from the die backside. This paper describes the use of backside FIB for a failure analysis application rather than for chip repair. Specifically, we used FIB technology to prepare an IC for inspection of voided metal interconnects (“lines”) and vias. Conventional FIB milling was combined with a superenhanced gas assisted milling process that uses XeF2 for rapid removal of large volumes of bulk silicon. This combined approach allowed removal of the TiW underlayer from a large number of M1 lines simultaneously, enabling rapid localization and plan view imaging of voids in lines and vias with backscattered electron (BSE) imaging in a scanning electron microscope (SEM). Sequential cross sections of individual voided vias enabled us to develop a 3D reconstruction of these voids. This information clarified how the voids were formed, helping us identify the IC process steps that needed to be changed.

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