Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (Rs) and barrier height (ϕb) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

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Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material

physica status solidi (b) ◽

10.1002/pssb.201900472 ◽

2019 ◽

Vol 257 (2) ◽

pp. 1900472 ◽

Cited By ~ 2

Author(s):

Elzbieta Guziewicz ◽

Tomasz Aleksander Krajewski ◽

Ewa Przezdziecka ◽

Krzysztof P. Korona ◽

Nikodem Czechowski ◽

...

Keyword(s):

Zinc Oxide ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Type Material ◽

Layer Deposition ◽

P Type

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Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment

Science of Advanced Materials ◽

10.1166/sam.2016.2916 ◽

2016 ◽

Vol 8 (9) ◽

pp. 1866-1869

Author(s):

Seung Chan Heo ◽

Woo Suk Jung ◽

Donghwan Lim ◽

Gwangwe Yoo ◽

Jin-Hong Park ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Plasma Treatment ◽

Leakage Current ◽

Atomic Layer ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Gate Leakage Current ◽

Layer Deposition ◽

Mos Device

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ELECTRICAL PROPERTIES OF Al/p-Si STRUCTURE WITH Al2O3 THIN FILM FABRICATED BY ATOMIC LAYER DEPOSITION SYSTEM

Surface Review and Letters ◽

10.1142/s0218625x17500779 ◽

2016 ◽

Vol 24 (06) ◽

pp. 1750077

Author(s):

DILBER ESRA YİLDİZ ◽

HATICE KANBUR CAVUŞ

Keyword(s):

Atomic Layer Deposition ◽

Barrier Height ◽

Image Force ◽

Atomic Layer ◽

State Density ◽

Mis Structure ◽

Insulator Layer ◽

Zero Bias ◽

Energy Density Distribution ◽

Layer Deposition

Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si [Formula: see text] and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage ([Formula: see text]) characteristics of these structures were investigated in two different temperatures. The main electrical parameters such as the ideality factor ([Formula: see text]), zero bias barrier height ([Formula: see text]), and series resistance ([Formula: see text]) values were found for 300 and 400[Formula: see text]K. The energy density distribution profiles of the interface state density ([Formula: see text]) were determined from the [Formula: see text] characteristics. In addition, the capacitance–voltage ([Formula: see text]) and conductance–voltage ([Formula: see text]) characteristics of devices were investigated in the frequency range 50–1000[Formula: see text]kHz at room temperature. Frequency-dependent electrical characteristics such as doping acceptor concentration ([Formula: see text]), energy difference between the valance band edge and bulk Fermi level ([Formula: see text]), diffusion potential ([Formula: see text]), barrier height ([Formula: see text]), the image force barrier lowering ([Formula: see text]), maximum electric field ([Formula: see text]), and [Formula: see text] values were determined using [Formula: see text] and [Formula: see text] plots. In addition, the [Formula: see text] values were performed using Hill–Coleman method. According to experimental results, the locations of [Formula: see text] and [Formula: see text] have an important effect on [Formula: see text], [Formula: see text] and [Formula: see text] plots of MIS structure.

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Atomic Layer Deposition of p-Type Phosphorus-Doped Zinc Oxide Films Using Diethylzinc, Ozone and Trimethylphosphite

Electrochemical and Solid-State Letters ◽

10.1149/1.3537326 ◽

2011 ◽

Vol 14 (5) ◽

pp. H181 ◽

Cited By ~ 12

Author(s):

Hai Yuan ◽

Bing Luo ◽

Stephen A. Campbell ◽

Wayne L. Gladfelter

Keyword(s):

Zinc Oxide ◽

Atomic Layer Deposition ◽

Oxide Films ◽

Atomic Layer ◽

Zinc Oxide Films ◽

Layer Deposition ◽

P Type ◽

Phosphorus Doped

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Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4972870 ◽

2017 ◽

Vol 35 (1) ◽

pp. 01A107 ◽

Cited By ~ 11

Author(s):

Milan Ťapajna ◽

Lukáš Válik ◽

Filip Gucmann ◽

Dagmar Gregušová ◽

Karol Fröhlich ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Gate Dielectric ◽

Atomic Layer ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Layer Deposition ◽

Al2o3 Gate Dielectric ◽

Deposition Conditions

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Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.1c00429 ◽

2021 ◽

Author(s):

Julia D. Lenef ◽

Jaesung Jo ◽

Orlando Trejo ◽

David J. Mandia ◽

Rebecca L. Peterson ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Copper Oxide ◽

Oxidation State ◽

Atomic Layer ◽

Oxide Semiconductors ◽

Layer Deposition ◽

Phase Oxidation ◽

P Type

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Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

Journal of Materials Chemistry C ◽

10.1039/d0tc05626j ◽

2021 ◽

Author(s):

Sungho Park ◽

Byung Jun Kim ◽

Tae Yeon Kim ◽

Eui Young Jung ◽

Kyu-Myung Lee ◽

...

Keyword(s):

Zinc Oxide ◽

Atomic Layer Deposition ◽

Quantum Dot ◽

Aluminum Oxide ◽

Thin Layer ◽

Visible Light ◽

Atomic Layer ◽

Zno Films ◽

Additional Layer ◽

Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

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