scholarly journals Encapsulation of NEM Memory Switches for Monolithic-Three-Dimensional (M3D) CMOS-NEM Hybrid Circuits

2018 ◽  
Author(s):  
Hyun Chan Jo ◽  
Woo Young Choi
Keyword(s):  
Active Region ◽  
Circuit Design ◽  
Three Dimensional ◽  
Nanoelectromechanical Systems ◽  
Release Process ◽  
Passivation Layers ◽  
Encapsulation Method ◽  
Intermetal Dielectric ◽  
Metal Layers ◽  
Mechanical Movement

Considering the isotropic release process of nanoelectromechanical systems (NEMS), defining the active region of NEM memory switches is one of the most challenging process technologies for the implementation of monolithic-three-dimensional (M3D) CMOS-NEM hybrid circuits. In this paper, we propose a novel encapsulation method of NEM memory switches. It uses alumina (Al2O3) passivation layers which are fully compatible with CMOS baseline process. The Al2O3 bottom passivation layer can protect intermetal dielectric (IMD) and metal interconnection layers from vapor hydrogen fluoride (HF) etch process. Thus, the controllable formation of the cavity for the mechanical movement of NEM memory switches can be achieved without causing any damage to CMOS baseline circuits as well as metal interconnection lines. As a result, NEM memory switches can be located in any places and metal layers of an M3D CMOS-NEM hybrid chip, which makes circuit design easier and more volume-efficient. The feasibility of our proposed method is verified based on experimental results.

scholarly journals Encapsulation of NEM Memory Switches for Monolithic-Three-Dimensional (M3D) CMOS-NEM Hybrid Circuits

2018 ◽  
Author(s):  
Hyun Chan Jo ◽  
Woo Young Choi
Keyword(s):  
Active Region ◽  
Circuit Design ◽  
Three Dimensional ◽  
Nanoelectromechanical Systems ◽  
Release Process ◽  
Passivation Layers ◽  
Encapsulation Method ◽  
Intermetal Dielectric ◽  
Metal Layers ◽  
Mechanical Movement

Considering the isotropic release process of nanoelectromechanical systems (NEMS), defining the active region of NEM memory switches is one of the most challenging process technologies for the implementation of monolithic-three-dimensional (M3D) CMOS-NEM hybrid circuits. In this paper, we propose a novel encapsulation method of NEM memory switches. It uses alumina (Al2O3) passivation layers which are fully compatible with CMOS baseline process. The Al2O3 bottom passivation layer can protect intermetal dielectric (IMD) and metal interconnection layers from vapor hydrogen fluoride (HF) etch process. Thus, the controllable formation of the cavity for the mechanical movement of NEM memory switches can be achieved without causing any damage to CMOS baseline circuits as well as metal interconnection lines. As a result, NEM memory switches can be located in any places and metal layers of an M3D CMOS-NEM hybrid chip, which makes circuit design easier and more volume-efficient. The feasibility of our proposed method is verified based on experimental results.

The three-dimensional structure of the corona above active region NOAA 9591 from microwave observations

2006 ◽  
Vol 50 (8) ◽  
pp. 679-686 ◽  
Author(s):  
N. G. Peterova ◽  
B. V. Agalakov ◽  
T. P. Borisevich ◽  
A. N. Korzhavin ◽  
B. I. Ryabov
Keyword(s):  
Active Region ◽  
Three Dimensional ◽  
Dimensional Structure ◽  
Active Region Noaa ◽  
Three Dimensional Structure ◽  
Region Noaa

scholarly journals Three-dimensional lattice logic circuits, Part I: Fundamentals

2005 ◽  
Vol 18 (1) ◽  
pp. 1-13 ◽  
Author(s):  
Anas Al-Rabadi
Keyword(s):  
Circuit Design ◽  
Fault Localization ◽  
Three Dimensional ◽  
Logic Circuits ◽  
Logic Circuit ◽  
Device Performance ◽  
Important Class ◽  
Future Directions ◽  
Dimensional Lattice ◽  
Current Technology

Fundamentals of regular three-dimensional (3D) lattice circuits are introduced. Lattice circuits represent an important class of regular circuits that allow for local interconnections, predictable timing, fault localization, and self-repair. In addition, three-dimensional lattice circuits can be potentially well suited for future 3D technologies, such as nanotechnologies, where the intrinsic physical delay of the irregular and lengthy interconnections limits the device performance. Although the current technology does not offer a menu for the immediate physical implementation of the proposed three-dimensional circuits, this paper deals with three-dimensional logic circuit design from a fundamental and foundational level for a rather new possible future directions in designing digital logic circuits.

A THREE-DIMENSIONAL MODEL OF ACTIVE REGION 7986: COMPARISON OF SIMULATIONS WITH OBSERVATIONS

2016 ◽  
Vol 817 (1) ◽  
pp. 15 ◽  
Author(s):  
Yung Mok ◽  
Zoran Mikić ◽  
Roberto Lionello ◽  
Cooper Downs ◽  
Jon A. Linker
Keyword(s):  
Active Region ◽  
Three Dimensional ◽  
Dimensional Model ◽  
Three Dimensional Model

High quality factor fractal inductor with complementary split-ring array inclusion

Circuit World ◽  
2020 ◽  
Vol 46 (3) ◽  
pp. 215-219
Author(s):  
Akhendra Kumar Padavala ◽  
Narayana Kiran Akondi ◽  
Bheema Rao Nistala
Keyword(s):  
Quality Factor ◽  
Circuit Design ◽  
Integrated Circuit ◽  
Printed Circuit Board ◽  
Three Dimensional ◽  
Circuit Board ◽  
Integrated Circuit Design ◽  
Split Ring ◽  
Content Type ◽  
Practical Implications

Purpose This paper aims to present an efficient method to improve quality factor of printed fractal inductors based on electromagnetic band-gap (EBG) surface. Design/methodology/approach Hilbert fractal inductor is designed and simulated using high-frequency structural simulator. To improve the quality factor, an EBG surface underneath the inductor is incorporated without any degradation in inductance value. Findings The proposed inductor and Q factor are measured based on well-known three-dimensional simulator, and the results are compared experimentally. Practical implications The proposed method was able to significantly decrease the noise with increase in the speed of radio frequency and sensor-integrated circuit design. Originality/value Fractal inductor is designed and simulated with and without EBG surfaces. The measurement of printed circuit board prototypes demonstrates that the inclusion of split-ring array as EBG surface increases the quality factor by 90 per cent over standard fractal inductor of the same dimensions with a small degradation in inductance value and is capable of operating up to 2.4 GHz frequency range.

scholarly journals Analysis of Multiquantal Transmitter Release From Single Cultured Cortical Neuron Terminals

1999 ◽  
Vol 81 (4) ◽  
pp. 1810-1817 ◽  
Author(s):  
Oliver Prange ◽  
Timothy H. Murphy
Keyword(s):  
Cortical Neuron ◽  
Cortical Neurons ◽  
Transmitter Release ◽  
Primary Cultures ◽  
Three Dimensional ◽  
Variable Number ◽  
Release Process ◽  
Release Probability ◽  
Synaptic Terminals ◽  
Neuron Terminals

Analysis of multiquantal transmitter release from single cultured cortical neuron terminals. Application of single synapse recording methods indicates that the amplitude of postsynaptic responses of single CNS synapses can vary greatly among repeated stimuli. To determine whether this observation could be attributed to synapses releasing a variable number of transmitter quanta, we assessed the prevalence of multiquantal transmitter release in primary cultures of cortical neurons with the action potential (AP)-dependent presynaptic turnover of the styryl dye FM1–43 ( Betz and Bewick 1992 , 1993 ; Betz et al. 1996 ). It was assumed that if a high proportion of vesicles within a terminal were loaded with FM1–43 the amount of dye released per stimulus would be proportional to the number of quanta released and/or the probability of release at a terminal. To rule out differences in the amount of release (between terminals) caused by release probability or incomplete loading of terminals, conditions were chosen to maximize both release probability and terminal loading. Three-dimensional reconstruction of terminals was employed to ensure that bouton fluorescence was accurately measured. Analysis of the relationship between the loading of terminals and release indicated that presumed larger terminals (>FM1–43 uptake) release a greater amount of dye per stimulus than smaller terminals, suggesting multiquantal release. The distribution of release amounts across terminals was significantly skewed toward higher values, with 13–17% of synaptic terminals apparently releasing multiple quanta per AP. In conclusion, our data suggest that most synaptic terminals release a relatively constant amount of transmitter per stimulus; however, a subset of terminals releases amounts of FM1–43 that are greater than that expected from a unimodal release process.

A new three-dimensional chaotic system: its adaptive control and circuit design

2019 ◽  
Vol 13 (1) ◽  
pp. 101
Author(s):  
Gambo Betchewe ◽  
Mohamadou Alidou ◽  
Sundarapandian Vaidyanathan ◽  
Oumate Alhadji Abba
Keyword(s):  
Adaptive Control ◽  
Circuit Design ◽  
Chaotic System ◽  
Three Dimensional

Circuit Design Contains a Class of Squared Term Lorenz Family Chaotic System

2014 ◽  
Vol 602-605 ◽  
pp. 2684-2687
Author(s):  
Yu Zhang ◽  
Chong Lou Tong ◽  
Teng Fei Lei
Keyword(s):  
Numerical Simulation ◽  
Lyapunov Exponent ◽  
Circuit Design ◽  
Chaotic System ◽  
Lorenz System ◽  
Three Dimensional ◽  
System Stability ◽  
Experimental Simulation ◽  
Chaotic Circuit ◽  
New Class

A new class of three-dimensional chaotic system is constructed by algebraic methods, which has a similar structure with the classic Lorenz system but contains the square term. The equilibrium point of the system stability is analyzed, and the numerical simulation is carried on the bifurcation diagram and Lyapunov exponent. The chaotic circuit of these systems is designed by using the software of EWB. The results of the experimental simulation verify the existence of the chaotic attractor, which provides theoretical reference to the application of such system.

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