Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field Effect Transistors

We study the effect of polymer coating, pressure, temperature and light on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We prove that the removal of a layer of poly(methyl methacrylate) or a decrease of the pressure change the device conductivity from p to n-type. We demonstrate a gate-tunable Schottky barrier at the contacts and measure a barrier height of ~70 meV in flat-band condition. We report and discuss a temperature-driven change in the mobility and the subthreshold slope which we use to estimate the trap density at the WSe2/SiO2 interface. We study the spectral photoresponse of the device, that can be used as a photodetector with a responsivity of ~0.5 AW-1 at 700 nm wavelength and 0.37 mW/cm2 optical power.

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Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors

Nanomaterials ◽

10.3390/nano8110901 ◽

2018 ◽

Vol 8 (11) ◽

pp. 901 ◽

Cited By ~ 26

Author(s):

Francesca Urban ◽

Nadia Martucciello ◽

Lisanne Peters ◽

Niall McEvoy ◽

Antonio Di Bartolomeo

Keyword(s):

Methyl Methacrylate ◽

Schottky Barrier ◽

Environmental Effects ◽

Field Effect ◽

Polymer Coating ◽

Field Effect Transistors ◽

Optical Power ◽

Pressure Change ◽

Flat Band ◽

Electrical Characteristics

We study the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer WSe 2 back-gated transistors with Ni / Au contacts. Our investigation shows that the removal of a layer of poly(methyl methacrylate) (PMMA) or a decrease of the pressure change the device conductivity from p- to n-type. From the temperature behavior of the transistor transfer characteristics, a gate-tunable Schottky barrier at the contacts is demonstrated and a barrier height of ~ 70 meV in the flat-band condition is measured. We also report and discuss a temperature-driven change in the mobility and the subthreshold swing that is used to estimate the trap density at the WSe 2 / SiO 2 interface. Finally, from studying the spectral photoresponse of the WSe 2 , it is proven that the device can be used as a photodetector with a responsivity of ~ 0.5 AW − 1 at 700 nm and 0.37 mW / cm 2 optical power.

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

Chemical Communications ◽

10.1039/c5cc00711a ◽

2015 ◽

Vol 51 (28) ◽

pp. 6130-6132 ◽

Cited By ~ 47

Author(s):

Lyubov A. Frolova ◽

Pavel A. Troshin ◽

Diana K. Susarova ◽

Alexander V. Kulikov ◽

Nataliya A. Sanina ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Memory Devices ◽

Electrical Characteristics ◽

Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

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Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

Physical Chemistry Chemical Physics ◽

10.1039/c4cp00665h ◽

2014 ◽

Vol 16 (22) ◽

pp. 10861-10865 ◽

Cited By ~ 6

Author(s):

Jia Gao ◽

Yueh-Lin Loo

Keyword(s):

Carbon Nanotubes ◽

High Purity ◽

Field Effect ◽

Field Effect Transistors ◽

Large Diameter ◽

Ozone Exposure ◽

Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.

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The electrical characteristics of high density arrays of silicon nanowire field-effect transistors: Dependence on wire spacing

2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013) ◽

10.1109/nano.2013.6720834 ◽

2013 ◽

Author(s):

Hye-Young Kim ◽

Kangho Lee ◽

Jae Woo Lee ◽

Sangwook Kim ◽

Gyu-Tae Kim ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

High Density ◽

Electrical Characteristics

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dc01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DC01 ◽

Cited By ~ 20

Author(s):

Tetsuro Hayashida ◽

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gas Flow ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Flow Ratio ◽

Nitrogen Gas ◽

Gas Flow Ratio

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Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/24/11/019 ◽

1991 ◽

Vol 24 (11) ◽

pp. 2032-2038 ◽

Cited By ~ 79

Author(s):

D M Taylor ◽

H L Gomes ◽

A E Underhill ◽

S Edge ◽

P I Clemenson

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Electrochemically Deposited ◽

Effect Of Oxygen ◽

Deposited Films

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Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19398 ◽

2021 ◽

Vol 21 (8) ◽

pp. 4330-4335

Author(s):

Jaemin Son ◽

Doohyeok Lim ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Operation Mode ◽

Feedback Loops ◽

Charge Carriers ◽

Electrical Characteristics ◽

Nanowire Transistors ◽

Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

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