scholarly journals Penumbuhan Lapisan Tipis Barium Titanat (BaTiO3) menggunakan Metode Sol-Gel dengan Variasi Mol

Author(s):  
Ayu Uswatu Lissa Sapta Setyadi ◽  
Yofentina Iriani ◽  
Fahru Nurosyid

<p class="AbstractEnglish"><strong>Abstra</strong><strong>ct</strong><strong>:</strong><strong> </strong>Preparation of Barium Titanate thin film (BaTiO3) has been done on Quartz substrate using sol gel method with spin coating technique. A thin film BaTiO3 wase made with a mole variation of 0.4 mol and 0.8 mol at a rotation speed of 3000 rpm. The samples were annealed at 400 ° C with 30 minutes stand-up time and at 900 ° C with 2 hours stand-up time and a heating rate of 5 ° C per minute. Characterization of optical properties samples was performed using UV-Vis spectrometers and characterization of microstructure samples using X-Ray Diffraction (XRD). The particle size was calculated by Scherer's formula. Based on the results of the analysis it was found that mole variation of the solution influenced the absorbance value, intensity, crystality level and BaTiO3 thin film particle size. The greater mole of BaTiO<sub>3</sub> solution the higher then absorbance value. The fewer then number of layers the greater then diffraction peak intensity. More number of layers the greater the level of crystallinity and particle size.</p><p class="KeywordsEngish"> </p><p class="AbstrakIndonesia"><strong>Abstra</strong><strong>k: </strong>Pembuatan lapisan tipis Barium Titanat (BaTiO<sub>3</sub>) telah dilakukan  diatas substrat Quartz menggunakan metode sol gel dengan teknik spin coating. Lapisan tipis BaTiO<sub>3 </sub>dibuat dengan variasi mol  0.4 mol dan  0.8 mol pada kecepatan putar 3000 rpm. Sampel diannealing  pada suhu 400<sup>o</sup>C dengan waktu tahan 30 menit  dan pada suhu 900<sup>o</sup>C dengan waktu tahan 2 jam dan kenaikan suhunya 5<sup>o</sup>C per menit. Karakterisasi sifat optik sampel dilakukan  menggunakan spektrometer UV-Vis dan karakterisasi struktrur mikro sampel menggunakan X-Ray Diffraction (XRD).Ukuran partikel dihitung dengan formula Scherer. Berdasarkan hasil analisis didapat bahwa variasi mol larutan mempengaruhi  mempengaruhi nilai absorbansi, intensitas, tingkat kekristalan dan ukuran partikel lapisan tipis BaTiO<sub>3</sub>. Semakin besar mol larutan BaTiO<sub>3 </sub>maka semakin tinggi nilai absorbansinya. Semakin sedikit jumlah lapisan maka intensitas puncak difraksi semakin besar. Semakin banyak jumlah lapisan maka semakin besar pula tingkat kekristalan dan ukuran partikel<em>. </em></p>

2014 ◽  
Vol 925 ◽  
pp. 278-281 ◽  
Author(s):  
Sharipah Nadzirah ◽  
Uda Hashim ◽  
N. Malihah

Titanium dioxide (TiO2) thin films based interdigitated electrodes (IDEs) have been synthesized using sol-gel method with hydrochloric acid (HCl) as catalyst. The prepared TiO2 solution has been deposited onto silicon dioxide (SiO2) substrates via spin-coating technique. Film was annealed at 500 °C and aluminium (Al) IDEs have been fabricated. Finally the X-ray diffraction (XRD) shows high intensity of both anatase and rutile peaks exist on 10 nm TiO2 thin film. Average crystallite size of the nanoparticles is seen to be 25 nm. UvVisible spectroscopic (UvVis) technique was used for the transmittance spectra characterization of the sample.


2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.


2018 ◽  
Vol 273 ◽  
pp. 140-145 ◽  
Author(s):  
Dewi Suriyani Che Halin ◽  
Norsuria Mahmed ◽  
Mohd Arif Anuar Mohd Salleh ◽  
A.N. Mohd Sakeri ◽  
Kamrosni Abdul Razak

Ag/TiO2thin films were prepared via sol-gel spin coating method. Structural, surface morphology and optical properties were investigated with the addition of two different amount of silver (Ag). X-ray diffraction pattern shows the sample with pure TiO2, the only phase presence was brookite TiO2. When the Ag content added into the solution, the phase existed for the samples with TiO2doped 0.5g Ag and TiO2doped 1.0g Ag were anatase TiO2with no peak corresponds to Ag phase. The surface morphology of film was characterized by scanning electron microscopy (SEM). The films were annealed at 450 °C and it shows non-uniform films. The films have a large flaky and cracks film which was attributed to surface tension between the film and the air during the drying process. When the solution of sol was added with Ag content, it shows the porous structure with flaky-crack films. With the increasing of the Ag content from 0.5g to 1.0g, the structure is more porous and it is good for the photocatalytic activity. The UV-Vis spectra shows that the film exhibits a low absorbance which was due to the substrate is inhomogeneously covered by the flaky-crack films.


2003 ◽  
Vol 785 ◽  
Author(s):  
R. Guzman ◽  
M.S. Tomar ◽  
R.E. Melgarejo

ABSTRACTThere is a great deal of interest in CaCu3Ti4O12 system for dielectric applications. We have studied Ca1-xSrxCu3Ti4O12 system for different compositions. The material is synthesized by sol-gel chemical solution route and thin films were deposited by spin coating. Thin films were investigated by x-ray diffraction and Raman spectroscopy for structural properties. These results indicate a solid solution for the compositions x = 0.00 to 0.80. The SEM micrographs shows the uniform films at 800° C, but the dielectric response of Ca1-xSrxCu3Ti4O12 (x = 0.00) shows the dielectric constant value below 200.


2010 ◽  
Vol 148-149 ◽  
pp. 1062-1066 ◽  
Author(s):  
Ren Bo Yang ◽  
Wei Guo Fu ◽  
Xiang Yun Deng ◽  
Zhong Wen Tan ◽  
Yan Jie Zhang ◽  
...  

The (Ba0.88Ca0.12)( Zr0.12Ti0.88)O3 powders and piezoelectric ceramics were prepared by sol-gel process. The reaction process was analyzed with the help of thermo gravimetric and differential scanning calorimetry. X-ray diffraction characterized results showed that the structure of the (Ba0.88Ca0.12)( Zr0.12Ti0.88)O3 powders was perovskite structure and the particle size was approximately 37nm. Piezoelectric measurements revealed that Curie temperature and the maximum piezoelectric coefficient d33 is 95°C and 215pm/V, respectively.


2017 ◽  
Vol 7 (3) ◽  
Author(s):  
Mohammad Hossein Manzari

In this study, thin films of pure ZnO and  doped ZnO with different percentages of gallium (0.5, 1, 2 and 4vt. %) on the glass substrates were deposited by using sol-gel method via spin coating technique at 2500 rpm, and all layers were annealed at 200°C for 1h and then Were examined their electrical, optical and structural properties. Concentration of all solution was 0.1M. The results show that the optimized layer is 0.5% GZO. By examining the transmittance spectrums we find that by doping the transparency of samples were improved and all samples in the visible areas 400-800nm are transparent. The electrical conductivity of all samples has been measured by four-point probe technique. The electrical conductivitys of pure ZnO sample and 0.5% GZO are 910-5 S/cm and 110-4 S/cm respectively. It can be a good choice for optoelectronic applications. Also X-ray diffraction results showed that diffraction peaks of 0.5% GZO sample have a small changes towards lower angles compared to the diffraction peaks of ZnO.


2006 ◽  
Vol 13 (01) ◽  
pp. 13-15 ◽  
Author(s):  
GUANGPENG MA ◽  
JIANRU HAN ◽  
CHANGHONG YANG ◽  
HONGYAN XU ◽  
DONGMEI YANG ◽  
...  

ZnO thin films were prepared on silica glass substrates by a sol–gel spin coating technique. The thickness of the films was about 200 nm. At 370 nm in the ultraviolet region, there is a sharp absorption edge that corresponds to the ZnO intrinsic band gap of 3.30 eV. The structural properties of the films were examined by X-ray diffraction, which demonstrates that the ZnO films were c-axis oriented. From the infrared spectrum, we conclude that ZnO was deposited on silica glass substrates through a high temperature process at 700°C.


2020 ◽  
Vol 12 (1) ◽  
pp. 75-77
Author(s):  
Renu Kumari ◽  
Vipin Kumar

A sol–gel spin coating procedure was used to produce cadmium oxide (CdO) thin film on the precleaned glass substrate. The structural, morphological and electrical properties of the produced film were specified by XRD, SEM and two-probe method. The polycrystalline nature with cubical structure of the cadmium oxide (CdO) thin film was confirmed by X-ray diffraction (XRD). Scanning electron microscope (SEM) confirms the uniform formation of film. The semiconducting character of the film was confirmed by electrical conductivity (direct current) measurement in dark. The Hall effect measurement of cadmium oxide film confirms the n-type conductivity.


2021 ◽  
Vol 18 (2) ◽  
pp. 147-160
Author(s):  
Rohanieza Abdul Rahman ◽  
◽  
Muhammad AlHadi Zulkefle ◽  
Sukreen Hana Herman ◽  
Rosalena Irma Alip ◽  
...  

This paper presents the investigation of the thickness of the ZnO thin films by varying the number of deposition layers during the spin coating deposition process. ZnO thin films were deposited with a different number of layers (ranging from 1, 3, and 5), and the main purpose of this study is to explore the effect of the thickness on the properties of ZnO thin films. The deposited thin films were characterised using field emission scanning electron microscope, surface profilometer, and X-ray diffraction. From the characterisation results, the morphology of the ZnO thin films changed significantly with the number of layers and their thickness value. As expected, the thickness increased as the number of layers increased. The crystalline quality of the deposited film improved as the thickness increased. A change in crystallographic orientation was also observed in which the thicker, thin films showed crystal growth in the (102) direction, whereas the thinner one was in the (101) direction. A slight increase in crystallite size for dominant orientation also was observed with the increase of film thickness.


2015 ◽  
Vol 1107 ◽  
pp. 667-671 ◽  
Author(s):  
Mohd Amin Nur Fahana ◽  
Zhi Yin Lee ◽  
Chee Yong Fong ◽  
Sha Shiong Ng

This study signifies the growth and characterization of aluminium nitride (AlN) thin film deposited on the atmospheric plasma treated n-type silicon [n-Si (100)]. Basically, the low cost spin coating technique which emphasized the production of a thin and uniform film on a flat substrate through a dilute solution is adopted. For the precursor preparation, the main ingredient of aluminium nitrate hydrate is dissolved with an organic solvent. The nitridation process is carried out on the deposited coating at 1100 °C for 1 hour. The surface morphology and structural properties of the thin film were investigated by field-emission scanning electron microscope, atomic force microscopy energy, dispersive X-ray spectroscopy and X-ray diffraction; while the optical properties of the deposited thin film was determined by using Fourier transform infrared spectrometer. All the results revealed that AlN thin film was successfully deposited on n-Si (100) substrate.


Sign in / Sign up

Export Citation Format

Share Document