scholarly journals Optical properties of CdO thin films

2010 ◽  
Vol 7 (1) ◽  
pp. 10-13
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Glass Substrate ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Cadmium Oxide ◽  
Localized States ◽  
Different Temperatures ◽  
Cdo Thin Films

Cadmium Oxide thin films were deposited on glass substrate by spray pyrolysis technique at different temperatures (300,350,400, 500)oC. The optical properties of the films were studied in this work. The optical band-gap was determined from absorption spectra, it was found that the optical band-gap was within the range of (2.5-2.56)eV also width of localized states and another optical properties.

scholarly journals Structural, optical and electrical characterization of CBD synthesized CdO thin films: influence of deposition time

2017 ◽  
Vol 35 (3) ◽  
pp. 470-478 ◽  
Author(s):  
M.R. Das ◽  
A. Mukherjee ◽  
P. Mitra
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Average Particle Size ◽  
Cadmium Oxide ◽  
Cadmium Acetate ◽  
Localized States ◽  
Average Particle ◽  
Cdo Thin Films

AbstractCadmium oxide (CdO) thin films were grown on glass substrates by chemical bath deposition (CBD) method for different deposition times using cadmium acetate as cationic precursor. The structural and optical characterization was carried out using XRD, TEM, and UV-Vis spectrophotometer measurements. Structural analyses with XRD confirmed cubic structure of the CdO. Average particle size estimated from Rietveld refinement method of XRD pattern corresponded well with TEM measurement. The optical band gap varied between 2.35 eV to 2.48 eV with deposition time and an increase in optical band gap with decreasing film thickness was observed. The AC electrical conduction behavior of the CdO film was investigated as a function of temperature as well as frequency. The conductivity measurements indicated localized conduction and hopping of carriers between localized states. The value of real part of dielectric constant was found to decrease with frequency and increase with temperature. The Nyquist plots at different temperatures showed the existence of both grains and grain boundaries contributing to conduction mechanism.

scholarly journals Conductivity and Density of States of New Polyphenylquinoline

Polymers ◽  
2019 ◽  
Vol 11 (6) ◽  
pp. 934 ◽  
Author(s):  
Shamil R. Saitov ◽  
Dmitriy V. Amasev ◽  
Alexey R. Tameev ◽  
Vladimir V. Malov ◽  
Marine G. Tedoradze ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Band Gap ◽  
Density Of States ◽  
Optical Band Gap ◽  
Dark Conductivity ◽  
Localized States ◽  
Energy Distance ◽  
Temperature Dependences

Electrical, photoelectrical, and optical properties of thin films of a new heat-resistant polyphenylquinoline synthesized using facile methods were investigated. An analysis of the obtained temperature dependences of the dark conductivity and photoconductivity indicates the hopping mechanism of conductivity over localized states arranging at the energy distance of 0.8 eV from the Fermi level located inside the band gap of the investigated material. The optical band gap of the studied material was estimated from an analysis of the spectral dependences of the photoconductivity and absorption coefficient before (1.8–1.9 eV) and after (2.0–2.2 eV) annealing at temperatures exceeding 100 °C. The Gaussian character of the distribution of the localized states of density inside the band gap near the edges of the bands was established. A mechanism of changes in the optical band gap of the investigating polymer under its annealing is proposed.

QUANTUM SIZE EFFECT ON THE OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED NANOCRYSTALLINE CADMIUM OXIDE THIN FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 713-716 ◽  
Author(s):  
B. SAHA ◽  
R. THAPA ◽  
N. S. DAS ◽  
K. K. CHATTOPADHYAY
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Quantum Confinement Effect ◽  
Cadmium Oxide ◽  
Quantum Size ◽  
Device Applications ◽  
Cdo Films ◽  
Different Thickness

CdO thin film with different thickness and different particle size are prepared through radio frequency magnetron sputtering technique. Quantum confinement effect causes the significant changes in their optical properties showing significant changes in the optical band gap. The CdO films are very highly conducting and transparent. Transparent and conducting thin films of CdO with effectively increased optical band gap are very useful for different device applications like solar cell, optoelectronic devices.

scholarly journals Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

2014 ◽  
Vol 36 ◽  
pp. 142-152 ◽  
Author(s):  
Hasan A. Hadi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Porous Silicon ◽  
Band Gap ◽  
Tin Oxide ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Tin Oxides ◽  
Uv Visible ◽  
P Type

In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO2:film was deduced. From (I-V) and (C-V) measurements, the barrier height for FTO/PS diode was of 0.77 eV, and the built in voltage , which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

Investigation on V2O5 Thin Films Prepared by Spray Pyrolysis Technique

2018 ◽  
Vol 17 (03) ◽  
pp. 1760037 ◽  
Author(s):  
A. Nancy Anna Anasthasiya ◽  
K. Gowtham ◽  
R. Shruthi ◽  
R. Pandeeswari ◽  
B. G. Jeyaprakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Xrd Pattern ◽  
Good Crystallinity ◽  
Solution Volume

The spray pyrolysis technique was employed to deposit V2O5 thin films on a glass substrate. By varying the precursor solution volume from 10[Formula: see text]mL to 50[Formula: see text]mL in steps of 10[Formula: see text]mL, films of various thicknesses were prepared. Orthorhombic polycrystalline V2O5 films were inferred from the XRD pattern irrespective of precursor solution volume. The micro-Raman studies suggested that annealed V2O5 thin film has good crystallinity. The effect of precursor solution volume on morphological and optical properties were analysed and reported.

scholarly journals Optical and Electrical Characteristics of CdO thin films deposited by Spray Pyrolysis Method

1970 ◽  
Vol 32 (1) ◽  
pp. 97-105 ◽  
Author(s):  
MM Islam ◽  
MR Islam ◽  
J Podder
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Cadmium Oxide ◽  
Optical Absorption Coefficient ◽  
Spray Pyrolysis Method ◽  
Pyrolysis Method ◽  
Sem Micrograph ◽  
Cdo Thin Films

Cadmium oxide (CdO) thin films have been deposited by a locally developed spray pyrolysis method onto glass substrate at 473K. The optical and electrical properties of the as-deposited and annealed films are studied in details. The surface morphology of the samples was studied by scanning electron microscopy (SEM). The SEM micrograph of as-deposited film shows uniform deposition over the substrate well. The optical absorption coefficient (α) of the CdO films was determined from transmittance spectra in the range of wavelength 450 - 650nm. For different thicknesses (130nm ~ 380nm) of as-deposited films, the direct band gap is found in the range of 2.40 ~2.51 eV and indirect band gap in the range of 1.97 ~ 2.20 eV. Resistivity (ρ) of CdO thin film was measured in the temperature range of 303 to 553K. The resistivity of the films of different thickness initially increases with increase in temperature and reaches a maximum at 430K and then decreases with further increase of temperature. The resistivity of the film exhibits metallic behaviour up to 430 K and above that the film behaves like a semiconductor. Activation energy (ΔE) in the semiconductor region is found in the range from 0.049 to 0.075 eV for films of thickness ranging from 160 - 285 nm. Keywords: Spray pyrolysis, CdO, Resistivity, Optical band gap, Activation energy doi: 10.3329/jbas.v32i1.2447 Journal of Bangladesh Academy of Sciences, Vol. 32, No. 1, 97-105, 2008

Effects of Nitrogen Doping on Optical Properties of Tungsten Oxide Thin Films

2012 ◽  
Vol 616-618 ◽  
pp. 1773-1777
Author(s):  
Xi Lian Sun ◽  
Hong Tao Cao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Tungsten Oxide ◽  
Nitrogen Doping ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Tungsten Oxide Thin Films

In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.

Enhancing resistive-type hydrogen gas sensing properties of cadmium oxide thin films by copper doping

2018 ◽  
Vol 42 (2) ◽  
pp. 1457-1466 ◽  
Author(s):  
K. Sankarasubramanian ◽  
P. Soundarrajan ◽  
T. Logu ◽  
K. Sethuraman ◽  
K. Ramamurthi
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Spray Pyrolysis Technique ◽  
Cadmium Oxide ◽  
Hydrogen Gas ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Gas Sensing Properties ◽  
Amorphous Glass ◽  
Cdo Thin Films

The pure and Cu-doped CdO thin films with various doping concentrations (0.5 to 2 wt%) were deposited on amorphous glass substrates by a chemical spray pyrolysis technique for hydrogen gas sensor application.

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