scholarly journals High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage

2020 ◽  
Author(s):  
Yachao Zhang ◽  
Yifan Li ◽  
Jia Wnag ◽  
Yiming Shen ◽  
Lin Du ◽  
...  
Keyword(s):  
Current Density ◽  
High Performance ◽  
Vertical Direction ◽  
Chemical Vapor ◽  
Drain Current ◽  
Organic Chemical ◽  
High Electron ◽  
Potential Wells ◽  
2Deg Density ◽  
Double Channel

Abstract In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively improves the transport properties of AlGaN channel heterostructures. On one hand, the total two dimensional electron gas (2DEG) density is promoted due to the double potential wells along the vertical direction and the enhanced carrier confinement. On the other hand, the average 2DEG density in each channel is reduced, and the mobility is elevated resulted from the suppression of carrier-carrier scattering effect. As a result, the maximum drain current density (I max ) of AlGaN double channel HEMTs reaches 473 mA/mm with gate voltage of 0V. Moreover, the superior breakdown performance of the AlGaN double channel HEMTs is also demonstrated. These results not only show the great application potential of AlGaN double channel HEMTs in microwave power electronics, but also develops a new thinking for the studies of group III nitride based electronic devices.

scholarly journals High-performance AlGaN double channel HEMTs with improved drain current density and high breakdown voltage

2020 ◽  
Author(s):  
Yachao Zhang ◽  
Zhizhe Wang ◽  
Shengrui Xu ◽  
Jincheng Zhang ◽  
Yue Hao
Keyword(s):  
Current Density ◽  
High Performance ◽  
Vertical Direction ◽  
Chemical Vapor ◽  
Drain Current ◽  
Organic Chemical ◽  
High Electron ◽  
Potential Wells ◽  
2Deg Density ◽  
Double Channel

Abstract In this work, for the first time, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively improves the transport properties of AlGaN channel heterostructures. On one hand, the total two dimensional electron gas (2DEG) density is promoted due to the double potential wells along the vertical direction and the enhanced carrier confinement. On the other hand, the average 2DEG density in each channel is reduced, and the mobility is elevated resulted from the suppression of carrier-carrier scattering effect. As a result, the maximum drain current density (Imax) of AlGaN double channel HEMTs reaches 473 mA/mm with gate voltage of 0V. Moreover, the superior breakdown performance of the AlGaN double channel HEMTs is also demonstrated. These results not only show the great application potential of AlGaN double channel HEMTs in microwave power electronics, but also develops a new thinking for the studies of group III nitride based electronic devices.

Broadband Ultraviolet Photodetector Based on Graphene/β-Ga2O3/GaN Heterojunction

2020 ◽  
Vol 1014 ◽  
pp. 131-136
Author(s):  
Chun Hong Zeng ◽  
Yong Jian Ma ◽  
Bao Shun Zhang ◽  
Ya Meng Xu ◽  
Mei Kong
Keyword(s):  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Transparent Electrode ◽  
Organic Chemical ◽  
Ultraviolet Photodetector ◽  
Micro Fabrication ◽  
Internal Gain ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Broadband ultraviolet (BUV) photodetectors are widely used in military and civil fields. A high performance BUV photodetector based on graphene/β-Ga2O3/GaN heterojunction is proposed and realized by semiconductor micro-fabrication techniques in this paper. The β-Ga2O3 and GaN films are grown by metal organic chemical vapor deposition (MOCVD), and the graphene is also used as a transparent electrode. The device exhibits a broad response band from 230 nm to 368 nm with responsivity exceeding 0.4A/W at -5 V bias voltage and a peak responsivity of 0.53 A/W at 256 nm. These performances can be attributed to the internal gain mechanism of graphene/β-Ga2O3/GaN heterojunction and the optical properties of graphene. Our work provides an efficient method to realize a high-performance BUV photodetector for photoelectric applications.

Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 329-334 ◽  
Author(s):  
Jing Lu ◽  
Jie Su ◽  
Ronald Arif ◽  
George D. Papasouliotis ◽  
Ajit Paranjpe
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Electron Mobility Transistor ◽  
Xrd Analysis ◽  
Structural Quality ◽  
Organic Chemical ◽  
High Electron ◽  
Mocvd Reactor ◽  
Metal Organic

ABSTRACTInAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm <111> Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughness of 0.68 nm were observed in a 5x5 μm2 atomic force microscope (AFM) scan. X-ray diffraction (XRD) analysis shows well-defined layer peaks and fringes, indicating good structural quality and abrupt layer interfaces. Thickness uniformity of InAlN is 0.87%, 1σ, for a 7-point XRD measurement across the 150 mm wafer. Secondary ion mass spectrometry (SIMS) analysis confirms the uniform indium depth profile and the presence of abrupt layer interfaces. Negligible Ga (< 100 ppm, atomic) incorporation was detected in the InAlN bulk film. Film sheet resistance of 230Ω/sq, charge of 2.1×1013/cm2, and mobility of 1270 cm2/V.s were measured on a prototypical InAlN/GaN HEMT structure comprising a 10 nm-thick, 17% indium, InAlN barrier.

scholarly journals Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 842 ◽  
Author(s):  
Myoung-Jin Kang ◽  
Hyun-Seop Kim ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Chemical Vapor ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Breakdown Field ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Passivation Process ◽  
Gan On Si ◽  
Sinx Film

We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

Metal-Organic chemical vapor deposition of BN on sapphire and its heterostructures with 2D and 3D materials

MRS Advances ◽  
2016 ◽  
Vol 1 (32) ◽  
pp. 2273-2283
Author(s):  
Qing Paduano ◽  
Michael Snure
Keyword(s):  
Electron Mobility ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Layer Growth ◽  
Organic Chemical ◽  
Layer By Layer ◽  
High Electron ◽  
Two Dimensional ◽  
Direct Growth

ABSTRACTWe studied MOCVD processing for direct growth of BN on 2” sapphire substrates as a template for heterostructures with two dimensional (2D) and three dimensional (3D) materials. The combined experimental evidence points to three growth modes for BN: self-terminating, 3D random, and layer-by-layer, all of which are dependent on V/III ratio, temperature, pressure, and substrate surface modification via nitridation. At moderate temperature (950-1050°C), BN growth using high V/III ratio is self-terminating, resulting in c-oriented films aligned in-plane with respect to the orientation of the sapphire substrate. BN films grown under low V/III ratios are 3D, randomly oriented, and nano-crystalline. At higher temperature (1100°C), self-terminating growth transitions to a continuous layer-by-layer growth mode. When BN growth is self-terminating, films exhibit atomically smooth surface morphology and highly uniform thickness over a 2” sapphire wafer. Using these BN/sapphire templates we studied the growth of 2D and 2D/3D heterostructures. To study direct growth of 2D on 2D layered material we deposited graphene on BN in a continued process within the same MOCVD system. Furthermore, we explore the growth and nucleation of 3D materials (GaN and AlN) on BN. AlGaN/GaN based high electron mobility transistor (HEMT) structures grown on BN/sapphire exhibited two-dimensional electron gas characteristics at the AlGaN/GaN heterointerface, with room-temperature electron mobility and sheet electron density about 1900cm2/Vs and 1x1013cm-2, respectively.

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