scholarly journals Method For Measuring Sub-Micron Facula At Single-Photon Level With Silicon Photomultiplier

2021 ◽  
Author(s):  
Yaxian Yang ◽  
Guoqing Zhang ◽  
Chen Zhang ◽  
Xinyue Cao ◽  
Lina Liu ◽  
...  
Keyword(s):  
Single Photon ◽  
Dimensional Space ◽  
Avalanche Photodiode ◽  
Objective Lens ◽  
Silicon Photomultiplier ◽  
Silicon Photomultipliers ◽  
Positioning Stage ◽  
Weak Light ◽  
Single Photon Response ◽  
Nominal Resolution

Abstract Sub-micron faculae (light spots) at the single-photon level have important applications in many fields. This report demonstrates a method for measuring facula size at the sub-micron single-photon level indirectly. The developed method utilizes Silicon Photomultipliers (SiPMs) as the single-photon response detectors, combined with a nano-positioning stage. The approach involves one- or two-dimensional space scanning and a deconvolution operation, which enable evaluations of the size and spatial distribution of focused facula in a single-photon-level pulsed laser. The results indicate that the average full width at half maximum of the faculae is about 0.66 µm, which is close to the nominal resolution of the objective lens of the microscope (0.42 µm). The proposed method has two key advantages: (1) it can measure sub-micron facula at the single-photon level, and (2) the sub-micron facula can easily be aligned with the detector because the array area of the avalanche photodiode cells in SiPM is usually larger than one square millimeter, and there is no need to put an optical slit, knife edge, or pinhole in front of the detector. The method described herein is applicable in weak light facula detection related fields.

scholarly journals Analytical Study of Front-End Circuits Coupled to Silicon Photomultipliers for Timing Performance Estimation under the Influence of Parasitic Components

Sensors ◽  
2020 ◽  
Vol 20 (16) ◽  
pp. 4428
Author(s):  
Pietro Antonio Paolo Calò ◽  
Savino Petrignani ◽  
Michele Di Gioia ◽  
Cristoforo Marzocca
Keyword(s):  
Single Photon ◽  
Performance Estimation ◽  
Laser Source ◽  
Detector Response ◽  
Silicon Photomultipliers ◽  
Parasitic Inductance ◽  
Front End ◽  
Single Photon Response ◽  
Variable Configuration ◽  
Definition Of

Full exploitation of the intrinsic fast timing capabilities of analog silicon photomultipliers (SiPMs) requires suitable front-end electronics. Even a parasitic inductance of a few nH, associated to the interconnections between the SiPM and the preamplifier, can significantly degrade the steepness of the detector response, thus compromising the timing accuracy. In this work, we propose a simple analytic expression for the single-photon response of a SiPM coupled to the front-end electronics, as a function of the main parameters of the detector and the preamplifier, taking into account the parasitic inductance. The model is useful to evaluate the influence of each parameter of the system on the slope of its response and to guide the designer in the definition of the architecture and the specifications for the front-end electronics. The results provided by the model have been successfully compared with experimental measurements from a front-end circuit with variable configuration based on a bipolar junction transistor (BJT), coupled to a 3 × 3 mm2 SiPM stimulated by a fast-pulsed laser source.

Take-off Angle Imaging: A New Image Mode for Scanning Electron Microscopy

2013 ◽  
Vol 21 (3) ◽  
pp. 22-25
Author(s):  
Nicholas C. Barbi ◽  
Richard B. Mott
Keyword(s):  
Electrical Current ◽  
Avalanche Photodiode ◽  
Si Substrate ◽  
Silicon Photomultiplier ◽  
Silicon Photomultipliers ◽  
X Ray ◽  
Backscattered Electron ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Traditional electron detectors for scanning electron microscopes (SEMs) are the Everhart-Thornley detector located on one side of the specimen and the overhead backscattered electron detector (BSED), usually mounted under the final lens. In 2011 PulseTor introduced an efficient BSED based on scintillator/silicon photomultipler technology that is small enough to be mounted on the tip of an X-ray detector. The scintillator converts the electron signal to light, which is in turn converted to an electrical current in the silicon photomultiplier (SiPM). Silicon photomultipliers were initially developed in Russia in the 1990s. The review article by Dolgoshein et al. cites much of the historical development. Following the recent work of Piemonte and others, the SiPM consists of an array of many identical and independent detecting elements (microcells) connected in parallel on a common Si substrate. Each microcell is an avalanche photodiode only tens of micrometers in size.

scholarly journals Single-Photon Detection Module Based on Large-Area Silicon Photomultipliers for Time-Domain Diffuse Optics

Instruments ◽  
2021 ◽  
Vol 5 (2) ◽  
pp. 18
Author(s):  
Fabio Acerbi ◽  
Anurag Behera ◽  
Alberto Dalla Mora ◽  
Laura Di Sieno ◽  
Alberto Gola
Keyword(s):  
Time Resolution ◽  
Time Domain ◽  
Single Photon ◽  
Building Blocks ◽  
The Body ◽  
Single Photon Detection ◽  
Silicon Photomultipliers ◽  
Photon Detection ◽  
Instrument Response Function ◽  
Diffuse Optics

Silicon photomultipliers (SiPM) are pixelated single-photon detectors combining high sensitivity, good time resolution and high dynamic range. They are emerging in many fields, such as time-domain diffuse optics (TD-DO). This is a promising technique in neurology, oncology, and quality assessment of food, wood, and pharmaceuticals. SiPMs can have very large areas and can significantly increase the sensitivity of TD-DO in tissue investigation. However, such improvement is currently limited by the high detector noise and the worsening of SiPM single-photon time resolution due to the large parasitic capacitances. To overcome such limitation, in this paper, we present two single-photon detection modules, based on 6 × 6 mm2 and 10 × 10 mm2 SiPMs, housed in vacuum-sealed TO packages, cooled to −15 °C and −36 °C, respectively. They integrate front-end amplifiers and temperature controllers, being very useful instruments for TD-DO and other biological and physical applications. The signal extraction from the SiPM was improved. The noise is reduced by more than two orders of magnitude compared to the room temperature level. The full suitability of the proposed detectors for TD-DO measurements is outside the scope of this work, but preliminary tests were performed analyzing the shape and the stability of the Instrument Response Function. The proposed modules are thus fundamental building blocks to push the TD-DO towards deeper investigations inside the body.

scholarly journals Nano-optical single-photon response mapping of waveguide integrated molybdenum silicide (MoSi) superconducting nanowires

2016 ◽  
Vol 24 (13) ◽  
pp. 13931 ◽  
Author(s):  
Jian Li ◽  
Robert A. Kirkwood ◽  
Luke J. Baker ◽  
David Bosworth ◽  
Kleanthis Erotokritou ◽  
...  
Keyword(s):  
Single Photon ◽  
Molybdenum Silicide ◽  
Superconducting Nanowires ◽  
Response Mapping ◽  
Single Photon Response

Single-photon avalanche photodiode with improved structure using an innovative current bias scheme

2008 ◽  
Author(s):  
Yonglin Gu ◽  
Fow-Sen Choa ◽  
Yan Feng ◽  
Xiucheng Wu ◽  
Stewart Wu ◽  
...  
Keyword(s):  
Single Photon ◽  
Avalanche Photodiode

Time-Correlated Raman and Fluorescence Spectroscopy Based on a Silicon Photomultiplier and Time-Correlated Single Photon Counting Technique

2013 ◽  
Vol 67 (2) ◽  
pp. 136-140 ◽  
Author(s):  
Chunling Zhang ◽  
Liying Zhang ◽  
Ru Yang ◽  
Kun Liang ◽  
Dejun Han
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Light Level ◽  
Sers Spectrum ◽  
Silicon Photomultiplier ◽  
Temporal Separation ◽  
Single Photon Counting ◽  
Surface Enhanced Raman ◽  
And Performance ◽  
High Fluorescence

We report a time-correlated Raman spectroscopy technique based on a silicon photomultiplier (SiPM) and a time-correlated single photon counting (TCSPC) technique to exploit the natural temporal separation between Raman and fluorescence phenomena to alleviate the high fluorescence background with conventional Raman detection. The TCSPC technique employed can greatly reduce the effect of high dark count rate (DCR) and crosstalk of SiPM that seriously hinder its application in low light level detection. The operating principle and performance of the 400 ps time resolution system are discussed along with the improvement of the peak-to-background ratio (PBR) for bulk trinitrotoluene (TNT) Raman spectrum relative to a commercial Raman spectrometer with charge coupled device (CCD). The fluorescence lifetime for solid TNT and Surface Enhanced Raman Scattering (SERS) spectrum for 10−6 mol/L trace TNT have also been obtained by this system, showing excellent versatility and convenience in spectroscopy measurement.

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