scholarly journals Double-Gate Operation of Metal Nanodot-Array-Based Single-Electron Device

2022 ◽  
Author(s):  
Takayuki Gyakushi ◽  
Ikuma Amano ◽  
Atsushi Tsurumaki-Fukuchi ◽  
Masashi Arita ◽  
Yasuo Takahashi
Keyword(s):  
Coulomb Blockade ◽  
Logic Gate ◽  
Structural Complexity ◽  
Drain Current ◽  
Single Electron ◽  
Double Gate ◽  
Gate Operation ◽  
Nanodot Array ◽  
Geometrical Effect ◽  
Single Electron Device

Abstract Multidot single-electron devices (SEDs) can realize new types of computing technologies, such as reconfigurable and reservoir computing. The self-assembled metal nanodot-array film attached with multiple gates is a candidate for use in such SEDs to achieve high functionality. However, the single-electron properties of such a film have not yet been investigated in use with optimally controlled multiple gates because of structural complexity having many nanodots. In this study, Fe nanodot-array-based double-gate SEDs were fabricated and their single-electron properties modulated by the top- and bottom-gate voltages (VT and VB, respectively) were investigated. As reported in our previous study, the drain current (ID) exhibited clear oscillations against VB (i.e., Coulomb blockade oscillation) in a part of the devices, originating from a single dot among several dots. The phase of the Coulomb blockade oscillation systematically shifted with VT, indicating that the charge state of the single dot was clearly controlled by both the gate voltages despite the multidot structure and the metal multidot SED has potential for logic-gate operation. The top and bottom gates affected the electronic state of the dot unevenly owing to the geometrical effect caused by the dot shape and size of the surrounding dots.

Double-gate single-electron devices formed by single-layered Fe nanodot array

2020 ◽  
Author(s):  
Takayuki Gyakushi ◽  
Yuki Asai ◽  
Beommo Byun ◽  
Ikuma Amano ◽  
Atsushi Tsurumaki-Fukuchi ◽  
...  
Keyword(s):  
Single Electron ◽  
Double Gate ◽  
Nanodot Array ◽  
Single Electron Devices ◽  
Electron Devices

Coulomb blockade correlations in a coupled single-electron device system

2019 ◽  
Vol 296 ◽  
pp. 12-16 ◽  
Author(s):  
Limin Cao ◽  
Fabio Altomare ◽  
Hongli Guo ◽  
Min Feng ◽  
Albert M. Chang
Keyword(s):  
Coulomb Blockade ◽  
Single Electron ◽  
Electron Device ◽  
Single Electron Device

scholarly journals Quantum Physics Based Analytical Modeling of Drain Current of Single Electron Transistor with Island Made of Zigzag-Tungsten Disulfide Nanoribbon

2020 ◽  
Keyword(s):  
Coulomb Blockade ◽  
Quantum Physics ◽  
Electron Tunneling ◽  
Drain Current ◽  
Tungsten Disulfide ◽  
Atomic Scale ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Ultra Low Power ◽  
Zigzag Pattern

Among many emerging nanoelectronic devices, single-electron transistor (SET) is one of the frontier device architectures that can offer high operating speed at an ultra-low power consumption. It exploits controlled electron tunneling to amplify current and retains its scalability even on an atomic scale. A new island based SET device architecture is proposed which is made of monolayer tungsten disulfide nanoribbon (WS2 NR) in zigzag pattern. The quantum physics based analytical model is developed in order to investigate the tunnelling drain current flowing through the proposed WS2 NR SET. It has been observed from the simulation study that the device current did not struggle in the coulomb blockade region whereas outside this region drain current value gradually decreases for longer nanoribbon likely due to formation of wider potential well in the island regime which helps to drop the rate of tunnelling electrons.

Single-Electron Device With Si Nanodot Array and Multiple Input Gates

2009 ◽  
Vol 8 (4) ◽  
pp. 535-541 ◽  
Author(s):  
T. Kaizawa ◽  
M. Arita ◽  
A. Fujiwara ◽  
K. Yamazaki ◽  
Y. Ono ◽  
...  
Keyword(s):  
Single Electron ◽  
Electron Device ◽  
Nanodot Array ◽  
Multiple Input ◽  
Single Electron Device

Silicon Single Electron Transistors with Single and Multi Dot Characteristics

2000 ◽  
Vol 638 ◽  
Author(s):  
Alexander Savin ◽  
Antti Manninen ◽  
Jari Kauranen ◽  
Jukka Pekola ◽  
Mika Prunnila ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Coulomb Blockade ◽  
Drain Current ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Telegraph Noise ◽  
Source Current ◽  
Electron Transistors

AbstractSilicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics of the SETs and the relaxation process. Telegraph noise has been observed in a definite range of source-drain and gate voltages.

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

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