scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy
Keyword(s):  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Differential Pressure ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Piezoresistive Pressure Sensors

Abstract The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2KNL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.

scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy
Keyword(s):  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Differential Pressure ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Piezoresistive Pressure Sensors

The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2K<sub>NL</sub> = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.

scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail Basov ◽  
Denis Prigodskiy
Keyword(s):  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Differential Pressure ◽  
Sensor Chip ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Piezoresistive Pressure Sensors

The investigation of the pressure sensor chip’s design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a membrane has been defined using available technological resources. The pressure sensor chip with an area of 6.15х6.15 mm has an average sensitivity S of 34.5 mV/кPa/V at nonlinearity 2K<sub>NL</sub> = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 кPa.

scholarly journals Investigation of High Sensitivity Piezoresistive Pressure Sensors for -0.5…+0.5 kPa

2021 ◽  
Author(s):  
Mikhail ◽  
Denis Prigodskiy
Keyword(s):  
Automotive Industry ◽  
Pressure Sensor ◽  
Thermal Hysteresis ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Burst Pressure ◽  
Average Sensitivity ◽  
Optimum Geometry ◽  
Developed Pressure ◽  
Piezoresistive Pressure Sensors

The investigation of the pressure sensor chip's design developed for operation in ultralow differential pressure ranges has been conducted. The optimum geometry of a diaphragm has been defined using available technological resources. The pressure sensor chip with an area of 6.15 × 6.15 mm has an average sensitivity S of 34.5 mV/ κPa/V at nonlinearity 2K NL = 0.81 %FS and thermal hysteresis up to 0.6 %FS was created. Owing to the chip connection with stop elements, the burst pressure reaches 450 κPa. The developed pressure sensor can be used in medicine, automotive industry and highly specialized scientific developments.

Modeling and Simulation of the Thermal Drift Characteristics of the Piezoresistive Pressure Sensor

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000373-000378
Author(s):  
R. Otmani ◽  
N. Benmoussa ◽  
K. Ghaffour
Keyword(s):  
Thermal Behavior ◽  
Modeling And Simulation ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Thermal Drift ◽  
Piezoresistive Pressure Sensor ◽  
Output Characteristics ◽  
Piezoresistive Pressure Sensors

Piezoresistive pressure sensors based on Silicon have a large thermal drift because of their high sensitivity to temperature (ten times more sensitive to temperature than metals). So the study of the thermal behavior of these sensors is essential to define the parameters that cause the drift of the output characteristics. In this study, we adopted the behavior of 2nd degree gauges depending on the temperature. Then we model the thermal behavior of the sensor and its characteristics.

Design and Optimization of a Highly Sensitive and Linearity Piezoresistive Pressure Sensor Based on a Combination of Cross Beam-Peninsula-Membrane Structure

2017 ◽  
Author(s):  
Tran Anh Vang ◽  
Xianmin Zhang ◽  
Benliang Zhu
Keyword(s):  
Pressure Sensor ◽  
Pressure Sensors ◽  
Single Crystal Silicon ◽  
High Sensitivity ◽  
Crystal Silicon ◽  
Nonlinearity Error ◽  
Trade Off ◽  
Design And Optimization ◽  
Piezoresistive Pressure Sensor ◽  
Piezoresistive Pressure Sensors

The sensitivity and linearity trade-off problem has become the hotly important issues in designing the piezoresistive pressure sensors. To solve these trade-off problems, this paper presents the design, optimization, fabrication, and experiment of a novel piezoresistive pressure sensor for micro pressure measurement based on a combined cross beam - membrane and peninsula (CBMP) structure diaphragm. Through using finite element method (FEM), the proposed sensor performances as well as comparisons with other sensor structures are simulated and analyzed. Compared with the cross beam-membrane (CBM) structure, the sensitivity of CBMP structure sensor is increased about 38.7 % and nonlinearity error is reduced nearly 8%. In comparison with the peninsula structure, the maximum non-linearity error of CBMP sensor is decreased about 40% and the maximum deflection is extremely reduced 73%. Besides, the proposed sensor fabrication is performed on the n-type single crystal silicon wafer. The experimental results of the fabricated sensor with CBMP membrane has a high sensitivity of 23.4 mV/kPa and a low non-linearity of −0.53% FSS in the pressure range 0–10 kPa at the room temperature. According to the excellent performance, the sensor can be applied to measure micro-pressure lower than 10 kPa.

FEM Simulation of a Twin-Island Structure Chip in Piezoresistive Pressure Sensor

2011 ◽  
Vol 464 ◽  
pp. 208-212
Author(s):  
Hai Bin Pan ◽  
Jian Ning Ding ◽  
Guang Gui Cheng ◽  
Hui Juan Fan
Keyword(s):  
Finite Element ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Fem Simulation ◽  
Sensor Chip ◽  
Stress Distributions ◽  
Island Structure ◽  
Piezoresistive Pressure Sensor ◽  
Mems Technology ◽  
Piezoresistive Pressure Sensors

In this paper a twin-island structure in piezoresistive pressure sensor based on MEMS technology has been presented, and a finite element mechanical model has been developed to simulate the static mechanical behavior of this twin-island structure sensor chip, especially the stress distributions in diaphragm of the sensor chip, which has a vital significance on piezoresistive pressure sensors’ sensitivity. The possible impacts of twin-island’s location and twin-island’s width on the stress distributions, as well as the maximum value of compressive stress and tensile stress, have been investigated based on numerical simulation with Finite Element Method (FEM). The simulation results show that twin-island’s location has great effect on the stress distributions in sensor chips’ diaphragms and the sensitivity of piezoresistive pressure sensors, compared with the twin-island’s width.

Design, Fabrication and Characterization of Ultra Miniature Piezoresistive Pressure Sensors for Medical Implants

2011 ◽  
Vol 254 ◽  
pp. 94-98 ◽  
Author(s):  
Li Shiah Lim ◽  
Woo Tae Park ◽  
Liang Lou ◽  
Han Hua Feng ◽  
Pushpapraj Singh
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Low Cost ◽  
Silicon Nanowire ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Medical Implants ◽  
Mems Technology ◽  
Piezoresistive Pressure Sensors

Pressure sensors using MEMS technology have been advanced due to their low cost, small size and high sensitivity, which is an advantage for biomedical applications. In this paper,silicon nanowire was proposed to be used as the piezoresistors due to the high sensitivity [1][2].The sensors were designed, and characterized for the use of medical devices for pressure monitoring. The pressure sensor size is 2mm x 2mm with embedded SiNWs of 90nm x150nm been fabricated. Additionally, the sensitivity of 0.0024 Pa-1 pressure sensor has been demonstrated.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

scholarly journals Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Theoretical Model ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Chip Size ◽  
Junction Transistor ◽  
Developed Pressure ◽  
P Type

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

scholarly journals Wearable Pressure Sensors Based on Carbonized Graphene Coated Waste Paper Aerogel

2021 ◽  
Author(s):  
Ang Li ◽  
Ce Cui ◽  
Weijie Wang ◽  
Yue Zhang ◽  
Jianyu Zhai ◽  
...  
Keyword(s):  
3D Structure ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Waste Paper ◽  
Low Density ◽  
Detection Range ◽  
Simple Strategy ◽  
Simple Filtration ◽  
Piezoresistive Pressure Sensors ◽  
Main Component

Abstract Graphene is complexed with cellulose fibers to construct 3D aerogels, which is generally considered to be an environmentally friendly and simple strategy to achieve wide sensing, high sensitivity and low detection of wearable piezoresistive pressure sensors. Here, graphene is incorporated into waste paper fibers with cellulose as the main component to prepare graphene coated waste paper aerogel (GWA) using a simple “filtration-oven drying” method under atmospheric pressure. The GWA was further annealed to obtain the carbonized graphene coated waste paper aerogel (C-GWA) to achieve low density and excellent resilience. The result shows that the C-GWA has a rough outer surface due to the 3D structure formed by interpenetrated fibers and the carbon skeleton with wrinkles. The sensor based on GCA shows low density (25mg/cm3), a wide detection range of 0-132 kPa, an ultra-low detection limit of 2.5 Pa (a green bean, ≈ 53.4 mg), and a high sensitivity of 31.6 kPa− 1. In addition, the sensor based on C-GWA with the excellent performance can be used to detect human motions including the pulse of the human body, cheek blowing and bending of human joints. The result indicates that the sensor based on C-GWA shows great potential for wearable electronic products.

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