scholarly journals Effect of Lanthanum Substrates on the Structural, Optical and Electrical Properties of Copper Selenide Thin Films Designed for 5G Technologies

2021 ◽  
Author(s):  
Atef Qasrawi ◽  
Arwa N. Abu Ghannam
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Defect Density ◽  
Cutoff Frequency ◽  
Drift Mobility ◽  
Copper Selenide ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Plasmon Frequency ◽  
5G Technologies

Abstract In this work, copper selenide thin films coated onto glass and transparent lanthanum substrates are studied. The (glass, La)/CuSe thin films which are prepared by the thermal evaporation technique under a vacuum pressure of 10− 5 mbar are structurally, morphologically, optically, dielectrically and electrically characterized. Lanthanum substrates improved the crystallinity by increasing the crystallite size and decreasing both of the microstrains and defect density of copper selenide. La substrates redshifts the energy band gap and doubled the dielectric constant values. In addition, employing Drude-Lorentz approaches for optical conduction to fit the dielectric constant provided information about the effects of La substrates on the drift mobility, plasmon frequency, free carrier density and scattering times at femtosecond level. The drift mobility increased and the plasmon frequency range is modified when La substrates are used. Verifying impedance spectroscopy test in the microwave frequency domain have shown that the La(gate)/CuSe/Ag (source) transistors can be employed as band pass filter suitable for 5G technologies. The microwave cutoff frequency reached ~ 5.0 GHz at a notch frequency of 2.80 GHz of the La/CuSe/Ag highpass filters.

scholarly journals Analysis and Simulation of Active Filters Using Operational Transconductance Amplifier (OTA)

2017 ◽  
Vol 13 (15) ◽  
pp. 170
Author(s):  
Haitham K. Ali ◽  
Jihan S. Abdaljabar
Keyword(s):  
Cutoff Frequency ◽  
Current Mode ◽  
High Gain ◽  
Angular Frequency ◽  
Active Filters ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Large Bandwidth ◽  
High Output Impedance

As the transistors are continuously scaling down, it becomes necessary to reduce voltage supply and power requirements of the circuit to increase its performance and stability. Whereas, current- mode devices require less number of stages with high output impedance results in improved performance and large bandwidth as compared to voltage-mode techniques. OTA are current-mode device that takes voltage as input and produces current as output with high gain and large bandwidth. The frequency bands were parameters were determined such as the cutoff frequency (fc), the band width (BW), the quality factor (Q), and the angular frequency (Wo). In this paper the design and the simulation of the transfer function has been done by using (MATLAB) in order to obtain the frequency response for all types of filter (the low pass filter, high pass filter, band pass filter and band stop filter).

TUNABLE BAND-PASS FILTER USING INTERDIGITAL CAPACITOR BY BARIUM STRONTIUM TITANATE (BST) THIN FILMS

2006 ◽  
Vol 86 (1) ◽  
pp. 141-148 ◽  
Author(s):  
TAE-SOON YUN ◽  
HEE NAM ◽  
KI-CHUL YOON ◽  
JONG-CHUL LEE ◽  
HYUN-SUK KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Bst Thin Films ◽  
Interdigital Capacitor ◽  
Barium Strontium ◽  
Band Pass

A SAW Filter of Elliptic Structure IDT

2014 ◽  
Vol 665 ◽  
pp. 623-628
Author(s):  
Dai Qiang Wang ◽  
Liang Rong Li ◽  
Yu Qing Chen ◽  
Zu Ming Yao ◽  
Hong Gong ◽  
...  
Keyword(s):  
Thin Films ◽  
Center Frequency ◽  
Band Pass Filter ◽  
Function Model ◽  
Modeling Tools ◽  
Pass Filter ◽  
Band Pass ◽  
Simulation Results ◽  
Weighting Methods ◽  
Piezoelectric Substrate

The design uses silicon-AlN thin films as the piezoelectric substrate, Use apo- dization weighting methods to optimize the design of IDT. The improved δ function model was Modeling Tools of Apodization weighted ellipse IDT structure, According to the result of simulation, we designed a layout of SAW band-pass filter and fabricated a sample of it which center frequency is 300MHz and insertion loss is 7dB, The research shows the consistency of simulation results with the experimental results.

Design and Development of a 14-Pole High-Temperature Superconducting Filter at 127.5MHz

2013 ◽  
Vol 392 ◽  
pp. 672-675 ◽  
Author(s):  
Jian Chang Du ◽  
Lai Yun Ji ◽  
Li Juan He
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Return Loss ◽  
Band Pass Filter ◽  
Pass Filter ◽  
High Temperature Superconducting ◽  
Hts Filter ◽  
Band Pass ◽  
Temperature Test ◽  
Better Than

A high-temperature superconducting (HTS) band-pass filter centered frequency at 127.5MHz was successfully designed and developed. The HTS filter is 14-pole, adopting compact symmetrical dual-spiral resonators. The filter was fabricated on a 3-inch-diameter 0.5-mm-thick LaAlO3 wafer with double-sided DyBa2Cu3O7 thin films. Through the low temperature test, the insertion loss of the HTS filter is under 0.1dB, the bandwidth is 20 MHz, the return loss is better than-22dB and the out-of-band rejection is greater than 80dB. The filters measurements agree well with the simulation.

A compact integrated band-pass filter on a low-dielectric constant polyimide dry film

2003 ◽  
Vol 40 (2) ◽  
pp. 177-179 ◽  
Author(s):  
Ohk-Kun Lim ◽  
Joon-Ik Lee ◽  
Yong-Jun Kim ◽  
Jae-Yeong Park
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Band Pass Filter ◽  
Pass Filter ◽  
Low Dielectric ◽  
Band Pass ◽  
Dry Film

MTF Compensation Combining Reciprocal Cell with Shift Invariance Wavelet

2011 ◽  
Vol 48-49 ◽  
pp. 719-723
Author(s):  
Zhao Jun Liu ◽  
Zhi Zhang ◽  
De Shen Xia
Keyword(s):  
Cutoff Frequency ◽  
Band Pass Filter ◽  
Test Results ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
Shift Invariance ◽  
Band Pass ◽  
Better Than

On remote sensing imaging platform, quality of image is normally degraded by aliasing. The low-pass filter is commonly used to dealiasing. However low-pass filter introduces error for frequencies above its cutoff frequency. And the removed aliasing is also valuable information. To retain the valuable information, we propose a restoration based on band-pass filter. Firstly, the image is transformed into frequency domain. A restoration of reciprocal cell is adopted. It is based on geometrical characteristics of sensors. As a result, the superposition parts are separated from spectrum inside the bandwidth. Then aliasing spectrum is put into right position. Inverse filter is used to deblurring and remove the color noise. Finally, the shift invariance wavelet is combined to reduce the white noise. The test results indicate that the proposed restoration is better than conventional restorations. Valuable information of the restored spectrum is more than degraded spectrum. So this proposed method will be beneficial in the field of practical projects.

scholarly journals The variation of propagation velocity according to substrate material of band pass filter

2018 ◽  
Vol 7 (3.3) ◽  
pp. 393
Author(s):  
Dong Yoon Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Shape ◽  
Preferential Orientation ◽  
Zno Thin Films ◽  
Band Pass Filter ◽  
Zno Thin Film ◽  
Pass Filter ◽  
Band Pass ◽  
Lift Off

Background/Objectives: The SAW filter has a frequency characteristic determined by the geometry of the IDT electrode, and is widely used as a band-pass filter for passing only a signal having a specific frequency.Methods/Statistical analysis: The features of this filter are high stability and reliability and enable mass production using semiconductor processes.Findings: The MCB process lift off method was used to fabricate the filter to solve the difficulties of the SAW filter process. In particular, we fabricated ZnO thin films with excellent c-axis preferential orientation, high resistivity of more than 106Ωcm, and flat surfaces, and fabricated SAW filters using ZnO thin films as deposition conditions suitable for application to SAW filters. ZnO thin films deposited under conditions of RF power of 150W, chamber pressure of 10mTorr, substrate temperature of 200 ° C and gas mixture ratio of Ar/O2 of 50/50 as sputtering gas have excellent c-axis preferential orientation, high specific resistance and flat surface shape. Then, ZnO piezoelectric thin film was deposited on SiO2 substrate by RF magnetron sputtering method and the SAW filter was fabricated by the MCB lift off method to analyze the frequency characteristics. In addition, compared with the SAW filter fabricated on the LiNbO3 substrate, which is a piezoelectric substrate.Improvements/Applications: The propagation speed of the SAW filter using the ZnO thin film was determined by the variation of the center frequency due to the deposition of the ZnO thin film. 

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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