Reversed Phase Transformation of β→α-Sn at Elevated Temperatures towards Quantum Material Integration on Silicon

2021 ◽  
Author(s):  
Alejandra Cuervo Covian ◽  
Shang Liu ◽  
Jules Gardener ◽  
Austin Akey ◽  
Barnaby Levin ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Elevated Temperatures ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Reversed Phase ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
New Family ◽  
Topological Quantum ◽  
Quantum Materials

Abstract α-Sn and SnGe alloys have recently attracted much attention as a new family of topological quantum materials. However, bulk α-Sn is thermodynamically stable only at <13°C. Moreover, scalable integration of α-Sn quantum materials/devices on Si has been hindered by a large lattice mismatch. To address these challenges, we demonstrate compressively strained α-Sn doped with 2-4 at.% Ge on a native oxide layer on Si, grown at 300-500°C through a reversed β-to-α-Sn phase transformation without relying on epitaxy. The size of α-Sn microdots reaches up to 200 nm, ~10x larger than the upper size limit for α-Sn formation reported before. Furthermore, the compressive strain makes it one of the few candidates for 3D topological Dirac semimetals with interesting applications in spintronics. We find that Ge-rich GeSn nanoclusters in the as-deposited materials seeded the reversed β-to-α-Sn transition at elevated temperatures. This process can be further optimized for SnGe quantum material and device integration on Si.

Phase transformation and layer evolution in molybdenum disilicide-silicon carbide nanolayered coatings

1994 ◽  
Vol 52 ◽  
pp. 538-539
Author(s):  
H. Kung ◽  
T. R. Jervis ◽  
J.-P. Hirvonen ◽  
M. Nastasi ◽  
T. E. Mitchell ◽  
...  
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Oxidation Resistance ◽  
Elevated Temperatures ◽  
Matrix Material ◽  
Molybdenum Disilicide ◽  
High Temperature Strength ◽  
Cross Sectional ◽  
Good Oxidation Resistance ◽  
Structural Applications

MoSi2 is a potential matrix material for high temperature structural composites due to its high melting temperature and good oxidation resistance at elevated temperatures. The two major drawbacksfor structural applications are inadequate high temperature strength and poor low temperature ductility. The search for appropriate composite additions has been the focus of extensive investigations in recent years. The addition of SiC in a nanolayered configuration was shown to exhibit superior oxidation resistance and significant hardness increase through annealing at 500°C. One potential application of MoSi2- SiC multilayers is for high temperature coatings, where structural stability ofthe layering is of major concern. In this study, we have systematically investigated both the evolution of phases and the stability of layers by varying the heat treating conditions.Alternating layers of MoSi2 and SiC were synthesized by DC-magnetron and rf-diode sputtering respectively. Cross-sectional transmission electron microscopy (XTEM) was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: crystallization and phase transformation of MoSi2, crystallization of SiC, and spheroidization of the layer structures.

Recent Advances in Topological Quantum Materials by Angle-Resolved Photoemission Spectroscopy

Matter ◽  
2020 ◽  
Vol 3 (4) ◽  
pp. 1114-1141
Author(s):  
Yujie Chen ◽  
Xu Gu ◽  
Yiwei Li ◽  
Xian Du ◽  
Lexian Yang ◽  
...  
Keyword(s):  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Recent Advances ◽  
Topological Quantum ◽  
Quantum Materials

Strain Analysis in Thin La1−xCaxMnO3 Films by Grazing Incidence X-ray Scattering

1999 ◽  
Vol 602 ◽  
Author(s):  
M. Petit ◽  
L. J. Martinez-Miranda ◽  
M. Rajeswari ◽  
A. Biswas ◽  
D. J. Kang ◽  
...  
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Strain Analysis ◽  
Grazing Incidence ◽  
Relaxation Processes ◽  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

AbstractWe have performed depth profile analyses of the lattice parameters in epitaxial thin films of La1−xCaxMno3 (LCMO), where x = 0.33 or 0.3, to understand the evolution of strain relaxation processes in these materials. The analyses were done using Grazing Incidence X-ray Scattering (GIXS) on films of different thicnesses on two different substrates, (100) oriented LaAlO3 (LAO), with a lattice mismatch of ∼2% and (110) oriented NGO, with a lattice mismatch of less than 0.1%. Films grown on LAO can exhibit up to three in-plane strained lattice constants, corresponding to a slight orthorhombic distortion of the crystal, as well as near-surface and columnar lattice relaxation. As a function of film thickness, a crossover from a strained film to a mixture of strained and relaxed regions in the film occurs in the range of 700 Å. The structural evolution at this thickness coincides with a change in the resistivity curve near the metalinsulator transition. The in-plane compressive strain has a range of 0.2 – 1.5%, depending on the film thickness for filsm in the range of 400 - 1500 A.

Wettability in pressure infiltration of SiC and oxidized SiC particle compacts by molten Al and Al-12wt%Si alloy

2007 ◽  
Vol 22 (8) ◽  
pp. 2273-2278 ◽  
Author(s):  
J.M. Molina ◽  
J. Tian ◽  
C. Garcia-Cordovilla ◽  
E. Louis ◽  
J. Narciso
Keyword(s):  
Contact Angle ◽  
Oxide Layer ◽  
Low Temperatures ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Threshold Pressure ◽  
Pressure Infiltration ◽  
Surface Conditions ◽  
Infiltration Behavior ◽  
Sic Particle

The infiltration behavior of compacts of SiC particles in two surface conditions, as-received and thermally oxidized, was investigated by using pure Al and Al-12wt%Si as infiltrating metals. Analysis of the threshold pressure for infiltration revealed that the process is governed by the same contact angle for all different systems, no matter the metal or particle condition. This leads to the conclusion that oxidation does not modify the wetting characteristics of the particles, most probably because they are already covered by a thin native oxide layer that remains unaltered in processing routes involving short contact times and low temperatures, such as actual conditions of pressure infiltration at 700 °C.

The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

2007 ◽  
Vol 1026 ◽  
Author(s):  
Augustus K. W. Chee ◽  
Conny Rodenburg ◽  
Colin John Humphreys
Keyword(s):  
Oxide Layer ◽  
Computer Modelling ◽  
Surface States ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Element Analysis ◽  
Surface Band ◽  
Band Bending ◽  
Wide Range ◽  
Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

Nano-Thick Amorphous Oxide Layer Produced by Plasma on Type 316L Stainless Steel for Improved Corrosion Resistance Under Plastic Deformation

CORROSION ◽  
10.5006/2674 ◽  
2018 ◽  
Vol 74 (9) ◽  
pp. 1011-1022 ◽  
Author(s):  
Megan Mahrokh Dorri ◽  
Stéphane Turgeon ◽  
Maxime Cloutier ◽  
Pascale Chevallier ◽  
Diego Mantovani
Keyword(s):  
Plastic Deformation ◽  
Stainless Steel ◽  
Oxide Layer ◽  
Electrochemical Impedance ◽  
Open Circuit ◽  
Localized Corrosion ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Amorphous Oxide ◽  
Amorphous Oxide Layer

Localized corrosion constitutes a major concern in medical devices made of stainless steel. The conventional approach to circumvent such a problem is to convert the surface polycrystalline microstructure of the native oxide layer to an amorphous oxide layer, a few micrometers thick. This process cannot, however, be used for devices such as stents that undergo plastic deformation during their implantation, especially those used in vascular surgery for the treatment of cardiac, neurological, and peripheral vessels. This work explores the feasibility of producing a nano-thick plastic-deformation resistant amorphous oxide layer by plasma-based surface modifications. By varying the plasma process parameters, oxide layers with different features were produced and their properties were investigated before and after clinically-relevant plastic deformation. These properties and the related corrosion mechanisms were mainly evaluated using the electrochemical methods of open-circuit potential, cyclic potentiodynamic polarization, and electrochemical impedance spectroscopy. Results showed that, under optimal conditions, the resistance to corrosion and to the permeation of ions in a phosphate buffered saline, even after deformation, was significantly enhanced.

scholarly journals Образование акцепторных центров в CdHgTe под воздействием воды и термообработок

2021 ◽  
Vol 55 (4) ◽  
pp. 331
Author(s):  
Г.Ю. Сидоров ◽  
Ю.Г. Сидоров ◽  
В.А. Швец ◽  
В.С. Варавин
Keyword(s):  
Refractive Index ◽  
Water Treatment ◽  
Epitaxial Films ◽  
Heat Treatments ◽  
Deionized Water ◽  
Native Oxide ◽  
Water Medium ◽  
Native Oxide Layer ◽  
Formation Heat ◽  
Lower Refractive Index

Influence storage and boiling in deionized water and heat treatments of epitaxial films CdxHg1-xTe on the Hall and ellipsometric parametres is investigated. Water treatment reduces refractive index of native CdxHg1-xTe oxide from 2.1 to 1.2-1.4. It means that matter with a lower refractive index, such as water, is introduced in the oxide. Boiling in water leads to formation of acceptors in CdxHg1-xTe with concentrations up to 1019 cm-3. Change of medium’s pH from alkaline to the acidic decreases the speed of acceptors formation. Heat treatments after storage in water also leads to formation of acceptors. The conclusion is made, that water medium or water absorbed by native oxide layer leads to formation of acceptors in CdxHg1-xTe. Concentration of acceptors grows with temperature of treatments and quantity of accessible water.

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