scholarly journals Reprogrammable plasmonic topological insulators with ultrafast control

2021 ◽  
Author(s):  
Jian Wei You ◽  
Qian Ma ◽  
Zhihao Lan ◽  
Qiang Xiao ◽  
Nicolae Panoiu ◽  
...  

Abstract Topological photonics has revolutionized our understanding of light propagation, providing a remarkably robust way to manipulate light. Despite the intensive research and rapid progress in this field, most of existing studies are focused on designing a static photonic structure to realize a specific topological functionality or phenomenon. Developing a dynamic and universal photonic topological platform to intelligently switch multiple topological functionalities at ultrafast speed is still a great challenge. Here we theoretically propose and experimentally demonstrate an ultrafast reprogrammable plasmonic topological insulator, where the topological propagation route can be dynamically changed at nanosecond-level switching time, which is more than 1×10^7 times faster than the current state-of-the-art, leading to an experimental demonstration of unprecedentedly ultrafast multi-channel optical analog-digital converter. This orders-of-magnitude improvement compared to previous works is due to the innovative use of ultrafast electric switches to implement the programmability of our plasmonic topological insulator, which enables us to precisely encode each unit cell by dynamically controlling its digital plasmonic states while keeping its geometry and material parameters unchanged. Our reprogrammable topological plasmonic platform can be fabricated by the widely-used printed circuit board technology, making it much more attractive and compatible with current highly integrated photoelectric systems. Furthermore, due to its flexible programmability, many existing photonic topological functionalities can be integrated into this versatile topological platform. Our work brings the current studies of photonic topological insulators to a digital and intelligent era, which could open new avenues towards the development of software-defined photoelectric elements in high-speed communications and computation-based intelligent devices with built-in topological protection.

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jian Wei You ◽  
Qian Ma ◽  
Zhihao Lan ◽  
Qiang Xiao ◽  
Nicolae C. Panoiu ◽  
...  

AbstractTopological photonics has revolutionized our understanding of light propagation, providing a robust way to manipulate light. So far, most of studies in this field are focused on designing a static photonic structure. Developing a dynamic photonic topological platform to switch multiple topological functionalities at ultrafast speed is still a great challenge. Here we theoretically propose and experimentally demonstrate a reprogrammable plasmonic topological insulator, where the topological propagation route can be dynamically changed at nanosecond-level switching time, leading to an experimental demonstration of ultrafast multi-channel optical analog-digital converter. Due to the innovative use of electric switches to implement the programmability of plasmonic topological insulator, each unit cell can be encoded by dynamically controlling its digital plasmonic states while keeping its geometry and material parameters unchanged. Our reprogrammable topological plasmonic platform is fabricated by the printed circuit board technology, making it much more compatible with integrated photoelectric systems. Furthermore, due to its flexible programmability, many photonic topological functionalities can be integrated into this versatile topological platform.


2013 ◽  
Vol 333-335 ◽  
pp. 465-471
Author(s):  
Chuan Liu ◽  
Zhi Chao Huang ◽  
Peng Wu ◽  
Lei Chen ◽  
Wei Wang

Many applications in Power communication system have a demand of adjustable transmission time delay of high-speed signal. In sequential logic circuit, the control of transmission time delay of high-speed signal can effectively improve the accuracy of clock sampling, as a result, satisfy the constraints between clock signal and periodic data. A method of equivalent sampling based on printed circuit board (PCB) is provided in the article, it realizes equivalent sampling of the data by fixing a group of clock signal delay, thus, increase the accuracy of sampling.


2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000195-000199
Author(s):  
J. Roberts ◽  
A. Mizan ◽  
L. Yushyna

GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die structure, has largely determined power transistor package formats in the past, the lateral nature of the today GaN devices requires the use of new package types. The new packages have to operate at high temperatures while providing effective heat removal, low inductance, and low series resistance. Because GaN devices are lateral they require the package metal tracks to be integrated within the on-chip tracks to carry the current away from the thin on-chip metal tracks. The new GaN devices are available in two formats: one for use in embedded modular assemblies and the other for use mounted upon conventional circuit board systems. The package intended for discrete printed circuit board (PCB) assemblies has a top side cooling option that simplifies the thermal interface to the heat sink. The paper describes the die layout including the added copper tracks. The corresponding package elements that interface directly with the surface of the die play a vital role in terms of the current handling. They also provide the interface to the external busbars that allow the package to be mounted within, or on PCB. The assembly has been subject to extensive thermal analysis and the performance of a 30 A, 650 V transistor is described.


Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 913 ◽  
Author(s):  
Suresh Alasatri ◽  
Libor Rufer ◽  
Joshua En-Yuan Lee

We present aluminum nitride (AlN) on silicon (Si) CMOS-compatible piezoelectric micromachined ultrasonic transducers (pMUTs) with an extended detection range of up to 140 cm for touchless sensing applications. The reported performance surpasses the current state-of-art for AlN-based pMUTs in terms of the maximum range of detection using just a pair of pMUTs (as opposed to an array of pMUTs). The extended range of detection has been realized by using a larger diaphragm allowed by fabricating a thicker diaphragm than most other pMUTs reported to date. Using a pair of pMUTs, we experimentally demonstrate the capability of range-finding by correlating the time-of-flight (TOF) between the transmit (TX) and receive (RX) pulse. The results were obtained using an experimental setup where the MEMS chip was interconnected with a customized printed circuit board (PCB) using Al wire bonds.


2019 ◽  
Vol 13 (6) ◽  
pp. 805-811 ◽  
Author(s):  
Neethu Salim ◽  
Saurabh Prakash Nikam ◽  
Saumitra Pal ◽  
Ashok Krishnrao Wankhede ◽  
Baylon Godfrey Fernandes

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