(DEPSCOR-92) Ultrafast Pulsed Applications to Photonic Device Materials and MBE Growth Research.

1996 ◽  
Author(s):  
Jin-Joo Song
Keyword(s):  
Mbe Growth ◽  
Photonic Device

Microstructural investigation of surface roughness in MBE-grown AlAs

1995 ◽  
Vol 53 ◽  
pp. 454-455
Author(s):  
R. Rajesh ◽  
R. Droopad ◽  
C. H. Kuo ◽  
R. W. Carpenter ◽  
G. N. Maracas
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Growth Control ◽  
Native Oxide ◽  
Effusion Cell ◽  
Surface Oxide Layer ◽  
Microstructural Investigation ◽  
Mbe Growth ◽  
Film Substrate ◽  
And Control

Knowledge of material pseudodielectric functions at MBE growth temperatures is essential for achieving in-situ, real time growth control. This allows us to accurately monitor and control thicknesses of the layers during growth. Undesired effusion cell temperature fluctuations during growth can thus be compensated for in real-time by spectroscopic ellipsometry. The accuracy in determining pseudodielectric functions is increased if one does not require applying a structure model to correct for the presence of an unknown surface layer such as a native oxide. Performing these measurements in an MBE reactor on as-grown material gives us this advantage. Thus, a simple three phase model (vacuum/thin film/substrate) can be used to obtain thin film data without uncertainties arising from a surface oxide layer of unknown composition and temperature dependence.In this study, we obtain the pseudodielectric functions of MBE-grown AlAs from growth temperature (650°C) to room temperature (30°C). The profile of the wavelength-dependent function from the ellipsometry data indicated a rough surface after growth of 0.5 μm of AlAs at a substrate temperature of 600°C, which is typical for MBE-growth of GaAs.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

MBE growth and characterization of ZnS1−xTex

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 66-69 ◽  
Author(s):  
K Takahashi
Keyword(s):  
Mbe Growth

Microscopic Structure of Er-Related Optically Active Centers in Si

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz
Keyword(s):  
Ground State ◽  
Photoluminescence Spectrum ◽  
Zeeman Effect ◽  
Optically Active ◽  
Single Type ◽  
Active Centers ◽  
Mbe Growth ◽  
Spectral Components ◽  
Er Doped ◽  
Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

КОМПЛЕКС БАЗОВЫХ ТЕХНОЛОГИЧЕСКИХ ПРОЦЕССОВ ДЛЯ ПОЛУЧЕНИЯ МОЩНЫХ ПОЛЕВЫХ ТРАНЗИСТОРОВ И МИС СВЧ-ДИАПАЗОНА НА ОСНОВЕ GAN И GAAS С ИСПОЛЬЗОВАНИЕМ ОТЕЧЕСТВЕННОГО ОБОРУДОВАНИЯ

2020 ◽  
Vol 96 (3s) ◽  
pp. 343-346
Author(s):  
А.Н. Алексеев ◽  
С.И. Петров
Keyword(s):  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Production Cycle ◽  
Electronic Industry ◽  
Plasma Chemical ◽  
High Power Field ◽  
Mbe Growth ◽  
Technological Processes ◽  
Plasma Chemical Etching ◽  
Problems And Solutions

Представлены результаты разработки базовых технологических процессов, используемых при получении мощных полевых транзисторов и МИС СВЧ-диапазона на основе GaN и GaAs, таких как: выращивание гетероструктур методом МЛЭ, металлизация и отжиг омических контактов, травление мезаизоляции, затворная металлизация, пассивация диэлектриком и др. Обсуждаются основные проблемы и пути их решения, в том числе особенности технологических процессов глубокого плазмохимического травления для формирования сквозных металлизированных отверстий в SiC и GaAs. Отдельное внимание уделено вопросам обеспечения однородности и воспроизводимости и их влиянию на выход годных структур. Продемонстрированы результаты использования ряда технологических процессов в производственном цикле АО «Светлана-Рост» и других предприятий радиоэлектронной промышленности. The paper presents the results of the development of basic technological processes used in the production of microwave high-power field-effect transistors based on GaN and GaAs such as: MBE growth, metallization and annealing of ohmic contacts, etching of mesa insulation, gate metallization, passivation by dielectric etc. The main problems and solutions including features of technological processes of deep plasma-chemical etching in SiC and GaAs have been discussed. Special attention is paid to the issues of uniformity and reproducibility and their impact on the yield of structures. The results of the use of technological processes in the production cycle of Svetlana-Rost JSC and other enterprises of the radio-electronic industry have been demonstrated.

MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs

1997 ◽  
Vol 175-176 ◽  
pp. 844-848 ◽  
Author(s):  
Makoto Kudo ◽  
Tomoyoshi Mishima
Keyword(s):  
Mbe Growth ◽  
Si Doped ◽  
Lattice Matched
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