Dip Coated ZnO Films for Transparent Window Applications

ABSTRACTAn effective n-type doping of ZnO using Cl was demonstrated in thin films electrochemically synthetized by adding different amounts of chlorine ions in the starting electrolyte. The ratio between chlorine and zinc cations was varied between 0 and 2 while the zinc concentration in the solution was kept constant. When the concentration of chloride in the bath increases an effective n-type doping of ZnO films takes place. n-type doping is evidenced by the rise of donors concentration, obtained from Mott-Schottky measurements, as well as from the blue shift observed in the optical gap owing to the Burstein-Moss effect.

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Analysis of Sputtered Zinc Oxide Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001781 ◽

1980 ◽

Vol 38 ◽

pp. 416-417

Author(s):

T. A. Emma ◽

M. P. Singh

Keyword(s):

Electron Microscopy ◽

Zinc Oxide ◽

Piezoelectric Materials ◽

Oxide Films ◽

Optical Quality ◽

Zno Films ◽

Rf Power ◽

X Ray Diffraction ◽

Sputtered Films ◽

Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

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Low Temperature Deposition of Zinc Oxide Films

MRS Proceedings ◽

10.1557/proc-763-b5.16 ◽

2003 ◽

Vol 763 ◽

Author(s):

H. W. Lee ◽

Y. G. Wang ◽

S. P. Lau ◽

B. K. Tay

Keyword(s):

Zinc Oxide ◽

Carrier Concentration ◽

Vacuum Arc ◽

Zno Films ◽

Al Alloy ◽

Pure Zinc ◽

Zinc Oxide Films ◽

Alloy Target ◽

Temperature Deposition ◽

Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

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Immobilization of ZnO Suspension on Glass Substrate to Remove Filtration During the Removal of Remazol Red R from Aqueous Solution

JOURNAL OF ADVANCES IN CHEMISTRY ◽

10.24297/jac.v12i6.6990 ◽

2016 ◽

Vol 12 (6) ◽

pp. 4127-4133

Author(s):

Nazmul Kayes ◽

Jalil Miah ◽

Md. Obaidullah ◽

Akter Hossain ◽

Mufazzal Hossain

Keyword(s):

Aqueous Solution ◽

Glass Substrate ◽

Uv Light ◽

Aqueous Suspension ◽

Light Irradiation ◽

Zno Films ◽

Light Sources ◽

Zno Film ◽

Semiconductor Oxides ◽

Remazol Red

Photodegradation of textile dyes in the presence of an aqueous suspension of semiconductor oxides has been of growing interest. Although this method of destruction of dyes is efficient, the main obstacle of applying this technique in the industry is the time and cost involving separation of oxides from an aqueous suspension. In this research, an attempted was made to develop ZnO films on a glass substrate by simple immobilization method for the adsorption and photodegradation of a typical dye, Remazol Red R (RRR) from aqueous solution. Adsorption and photodegradation of RRR were performed in the presence of glass supported ZnO film. Photodegradation of the dye was carried out by varying different parameters such as the catalyst dosage, initial concentrations of RRR, and light sources. The percentage of adsorption as well as photodegradation increased with the amount of ZnO, reaches a maximum and then decreased. Maximum degradation has been found under solar light irradiation as compared to UV-light irradiation. Removal efficiency was also found to be influenced by the pre-sonication of ZnO suspension.

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Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

10.26434/chemrxiv.5850003 ◽

2018 ◽

Author(s):

Peter George Gordon ◽

Goran Bacic ◽

Gregory P. Lopinski ◽

Sean Thomas Barry

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Atomic Ratio ◽

Aluminum Concentration ◽

Zno Films ◽

Transparent Conductor ◽

Kelvin Probe ◽

Layer Deposition ◽

Earth Abundant ◽

Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In2O3 (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10-3 Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200◦C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.

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